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Submitted on 1 Jan 1989
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SEM/EBIC STUDY OF ELECTRICAL PROPERTIES IN BULK AND AT GRAIN BOUNDARIES IN
Sb-DOPED GERMANIUM
N. Tabet, C. Monty
To cite this version:
N. Tabet, C. Monty. SEM/EBIC STUDY OF ELECTRICAL PROPERTIES IN BULK AND AT GRAIN BOUNDARIES IN Sb-DOPED GERMANIUM. Journal de Physique Colloques, 1989, 50 (C6), pp.C6-156-C6-156. �10.1051/jphyscol:1989616�. �jpa-00229647�
REVUE DE PHYSIQUE APPLIQUEE
Colloque C6, Suppl6ment au n06, Tome 24, Juin 1989
SEM/EBIC STUDY OF ELECTRICAL PROPERTIES IN BULK AND AT GRAIN BOUNDARIES IN Sb-DOPED GERMANIUM
N. TABET") and C. MONTY
Laboratoire de Physique des MatBriaux, CNRS, F-92195 Meudon, France
SEM/EBIC'
'
technique has been used recently to investigate both bulk and grain boundaries (GBs) electrical properties in germanium polycrystal s [I]. In this work, the minority carrier diffusion length has been deduced from Schottky contact efficiency measurements using an original model taking into account the recombination of electronic carriers at the metal-germanium interface [ 2 ] . The EBIC observation of GBs shows three different behaviours : i) active suboundaries, i i ) inactive suboundaries and i i i ) inactive highly misoriented grain boundaries. These defects have been characterized from a structural point of view using X-Ray topography (Berg Barrett) and ECP (Electron Channeling Pattern).The EBIC contrast profiles measured on the active suboundaries have been analyzed using Don01 ato mode1 [3].
The GBs recombinaison velocity of the holes deduced from these measurements is around 5. lo5 cm/s.
The influence of various heat treatments has been also studied. The results show that the bulk minority carrier diffusion length decreases from 16 m to 3 cyn aftef an annealing at T = 812°C during t = 2 hours. Moreover, some inactive GBs show a hTgh white EBIC contrast after annealing. It has been shown that this behaviour is a consequence of the ho,le diffusion length decrease in the bulk.
EBIC measurements have been performed at various temperatures (150K-300K) and for different injection levels. The results show the presence of a. hole trapping process at some GBs. Such traps behave as recombination centres when the temperature decreases and/or injection level increases.
[I] N. TABET, C. MONTY, Phil. Mag. B, 6 (1988) 763.
[2] N . TABET, R.J. TARENTO, Phil. Mag. to be published.
[3] C. DONOLATO, J. AppP. Phys. 54 (1983) 1314.
("permanent address : Laboratoire de Physique des Solides, Universiti? de Constantine. Algeria
(*)~lectron Beam Induced Current
Article published online by EDP Sciences and available at http://dx.doi.org/10.1051/jphyscol:1989616
