• Aucun résultat trouvé

Electronic structures and optical properties of some fluorite structured intermetallics

N/A
N/A
Protected

Academic year: 2021

Partager "Electronic structures and optical properties of some fluorite structured intermetallics"

Copied!
11
0
0

Texte intégral

(1)

HAL Id: jpa-00247040

https://hal.archives-ouvertes.fr/jpa-00247040

Submitted on 1 Jan 1994

HAL is a multi-disciplinary open access archive for the deposit and dissemination of sci- entific research documents, whether they are pub- lished or not. The documents may come from teaching and research institutions in France or abroad, or from public or private research centers.

L’archive ouverte pluridisciplinaire HAL, est destinée au dépôt et à la diffusion de documents scientifiques de niveau recherche, publiés ou non, émanant des établissements d’enseignement et de recherche français ou étrangers, des laboratoires publics ou privés.

Electronic structures and optical properties of some fluorite structured intermetallics

Anupam Gupta, R. Sen Gupta, K. Goswami

To cite this version:

Anupam Gupta, R. Sen Gupta, K. Goswami. Electronic structures and optical properties of some fluorite structured intermetallics. Journal de Physique I, EDP Sciences, 1994, 4 (12), pp.1867-1876.

�10.1051/jp1:1994227�. �jpa-00247040�

(2)

J Phys 1France 4 (1994) 1867-1876 DECEMBER 1994, PAGE 1867

Classification Physics Abstracts

71.25 71.20

Electronic structures and optical properties of some fluorite structured intermetallics

A. Gupta ('), R. Sen Gupta (2) and K. Goswami (3) (') Department of Physics, Behala College, Parnasree, India (2) Department of Physics, St Paul's CM. College, India

(3) Department of Physics, Jadavpur Umversity, Calcutta-700032, India (Received 28 Janiiary 1994, revised 30 June 1994, accepted 24 August 1994)

Abstract. The electromc energy band structures of three interrnetalhc compounds have been studied using the composite wave vanational version of the APW method. The band structure results of PtIn~ and Irsn~ are compatible with other noble metal mtermetallics. The densely populated valence band region of Ausb~ largely differs from that of PtIn~ and other intermetallics, but resemble those of AuGa~ and provides an important basis for interpreting varions physical

observables. The DOS, ]DOS, F~(w spectra and Fermi surfaces of the compounds calculated from the respective band structure data are different. The difference is attributed to the dissimilar

nature and position of the bands immediately above and below the Fermi level.

l. Introduction.

The growing interest in the physical properties of the intermetallics and their technological importance [1-7] basically motivated us to study the electronic properties of a serres of Au and Pt binary intermetallic compounds [8, 9]. In this paper we present the electromc band structure

results of three isostructural compounds, namely, Irsn~, PtIn~ and Ausb~. The compounds

remain unexplored to this date, except for trie few physico-chemical studies that bave been

made presently. In recent times an estimation of the heat capacity of AuSb2 based on contribution of the core atoms m the compound has been performed [10]. The systems AuSb2 and PtIn~ have also been thermodynamically assessed m order to provide thermodynamic data bases for performmg calculations on multicomponent systems II]. Chemical studies Iike the interaction of aurostibite with chloride solution has been studied as a possible mechanism for the preparation of mustard gold [12]. Moreover, the grain size of PtIn~ is important for ils

workabihty and hence has several applications. Theoretical work whose predictive capabihty

and understanding can guide further expenments, has also non yen been done on these compounds. The detail electronic energy band calculations, which are reported here for the first time wfll surely serve this purpose and provide a framework for the analysis of d-band

intermetalhcs. The band structure calculations have been performed using the composite wave

@ Les Editions de Physique 1994

(3)

variational version [13] of the APW method [14]. Despite ils limitations, the method has

already been apphed to a series of compounds [15, 16] with great success. The potential here is constructed by superposition of the free atom solution of Herman and Skillman [17].

2. Results and discussion.

Irsn~, PtIn~ and Ausb~ belong to the cubic fluonte structure of the type AX~, where A stands for a noble menai and X represents a Gr. IIIfIV or V menai. The lattice constants used m the calculation are 11,977 a-u- for Irsn~, 12.005 a-u- for PtIn2 and 12.578 a-u- for AuSb2 Il 8].

In figures1, ? and 3 we exhibit the electronic energy bands for Irsn~, PtIn~ and AuSb2 respectively. Dur discussion is concerned mainly with the bauds immediately above and below the Fermi level, as the other ones are not so cntical in describing the physical observables. The band structure results are quite similar to those for other Au and Pt intermetallics [8, 9, 19-2 Ii and we can indicate some salient features of these intermetallics as :

(Ii The Iowest Iymg band, situated well below the Fermi energy is best descnbed as a

bonding combination between nearest neighbour X atoms, has also a significant admixture of s character of the noble metal.

(2) The next two completely filled bands above the s band onginate from the 5d orbitals of the noble menai These narrow d bands split nearly identically at the r point, as for the respective elemental menais, despite the large difference m their band width, The broadening

of d-bands m the case of pure menais, reflects the stronger d-d overlap interaction between noble metal atoms as a result of smaller mteratomic distances as compared to those for the

compounds.

The d-band width as estimated from the measurement of the energy separation between the d-bands at the r point for these intermetallic compounds provide interesting information about d-d interaction as a function of pnmary interatomic distance. A marked decrease in the 5d band

~l

Éé EF

W r W r

Î-

Fig. I -Band structure of Irsnz along the symmetry point~ and axes.

(4)

12 ELECTRONIC AND OPTICAL PROPERTIES oF SOME INTERMETALLICS 1869

~ Cf

~

cn

~ .

w c W

Î-

Fig

o.2

IEF

e

oe~

W i-

Fig. 3. - and tructure of usbi

(5)

width m Au and Pt series [8, 9] with the increase of Iattice parameter indicates the decrease of strength of interaction between 5d orbitals on the neighbouring noble menai atoms.

(3) The antibonding states X~ r( Lj W( K3 ri arise mostly from the s states of the X-atoms. However, there lies a pronounced difference regarding the position of this state m

different intermetallics.

In the case of Irsn~, the antibonding band lies partly above E~ in the r X region and is situated completely below Fermi energy in all the other symmetry directions. The band is

therefore almost completely filled up, having a small hole surface around l~ and thus

contributing insignificantly to the Fermi surface.

In the case of PtIn~, the band is located completely above E~ along W-X and r X directions, and is partially filled along r L and r K directions, whereas, in Ausb~

it is completely filled throughout the BZ and lies well below the Fermi energy. This feature of a

completely filled antibonding state is also observed in another Au intermetallic, namely, AuGa~ [19-21], which is found to behave quite differently from the other Au mtermetallics.

(4) The remaining bands near the Fermi energy are pnmarily composed of X-atoms together

with a small contribution of the noble menai. The positions of these bands, namely,

r(~ and rj~ are quite different for the different compounds. In Ausb~, the two bands lie below

or just on the Fermi energy, whereas, in Ptln~, the bands are completely vacant. In addition to

this, the relative order of the two bands at ris mverted. Apart from the ordenng of the levels,

the nature and the shape of other bands m the conduction band region are quite similar in all the

three compounds.

The density of states (DOS) and the joint density of states (JDOS) of the compounds have been calculated by the Iinear energy tetrahedron method. Here 1/48th part of the Brillouin zone is divided into a mesh of 215 points. Calculations are done for ail the symmetry points and axes

and at aII general points on the surface of the three tetrahedra. The energies for the rest of the points are calculated by quadratic interpolation.

The calculated DOS of IrSn2, depicted in figure 4, is characterized by six different

structures of various sizes, shapes and nature. The first four lie in the valence band region

whereas the last two are situated in the conduction band region. The first small structure lying

between 0.96 and 0,91Ryd, onginates from the lowest bonding band. The next two

peaks, a small but sharp structure at -0.69Ryd. and a large but prominent peak at 0.635 Ryd., owe their ongin to the closely spaced flan Ir d-bauds m the A and ~ region. The

small structure at 0.58 Ryd. ongmates from the two bands, namely, the Zj band m the

X W region and the flat Lj K~ band in the L K direction. The first small structure

centred at -0.l6Ryd. m the conduction band region anses due to (i) the crossing of

degenerate and nondegenerate A bands of p character m the X r region and (ii) overlap of OE

bands of p-d character in the K-r region. The last small sharp peak centred at

-0.075Ryd. is attnbuted to a large number of closely spaced bands origmatmg from

r(~ and rj~ (near l~ m OE region and the crossmg of degenerate band A~ (r(~ Lj ) and nearly

flan band A (rj~ L ).

In the next two figures 5 and 6, the density of states for PtIn~ and Ausb~ are shown. In the DOS of PtIn2, the first small peak at about 0.885 Ryd, anses from the flan portion of the Iowest bonding band. This band is also responsible for the formation of the next two small

structures. The large peak centred at 0.5 Ryd. along with the prominent structures lymg

between 0.55 Ryd. to 0.65 Ryd. are attnbuted to the comparatively less dispersed 5d band of the noble metal. In the conduction band region, near the Fermi level, a small peak centred at

-0.145Ryd. is observed, which comes mamly from the flat portion of the bands

fi X~ and fj~ Xj about X. A small contribution also comes from trie band r(~ Kj

around K and the flat portion of fj~ L~ around L. The next small structure at 0.015 Ryd.

chiefly anses from a number of closely spaced bands around fj~ and f(~ m the

(6)

12 ELECTRONIC AND OPTICAL PROPERTIES oF SOME INTERMETALLICS 1871

Dos

lrsni PtIni

DOS

~

~ ~

cc ~

t cc

~

~ ~

a

~ =

g g

~ ~

~ ~

oe ce

a a

~ ~F

- i à

-

)

Ul

1.01 -0.61

Energy (Rydl Energy (Rydl

Fig. 4. Fig 5.

Fig. 4. - ensity

Fig 5. of states of PtInz as a of nergy.

E2 pectra

j Ausbi

S

Î

cc

t

a

,

z

13

~ -

~

é 1 -l

0

Energy ) E (eV)

Fig. 6. 7.

Fig. 6. - ensity

Fig. 7. F~ (w ) pectra of

IrSn2 from the JDOS

f -

regionandhe flat bandalong f~~ - Lj. The structure at 0.105 Ryd. results from

rossing a few bands around the symmetry point rj W( in the energy region.

The alence andregion of AuSb2 is largely populated as is eflected in the occurrence of a

number of peaks and tructures in the DOS. The first

small

peak entred at - 0.97yd.

(7)

with the two structures at 0.82 Ryd. and 0.775 Ryd. originate from the bonding band. The

pronounced peak at -0.675Ryd. associated with a small structure at -0,725Ryd., onginatmg from the d-band or Au-menai, is characteristic of noble metal intermetalhcs.

Besides these, unlike PtIn~, there anses a number of structures before the Fermi energy. The

two structures at 0.5 Ryd. and 0.4 Ryd. arise due to the filled flat antibonding band and the

degenerate A~ band at r(~, The partially filled Ai (Xj rj~) and the crossing of two filled flat bands starting from r(~ to L~ through L, are responsible for the formation of the peak at

-0.27Ryd. near E~. In the conduction band region, the first small structure close to

E~ is contributed by a number of bands crossmg the Fermi level in the r-K and

r L regions.

The complex dielectnc function, which can be obtained experimentally from optical spectroscopic studies, reveals the character of the electronic band structure Thus structures in the dielectnc function can be related to k conserving electnc dipole transitions from an initial

state i) to a final state f) separated by an energy hw, For this purpose e~(w), the imaginary

part of the dielectnc function calculated directly from JDOS results, has been presented in

figures 7, 8 and 9, so that, it can be used as a guide for assigning optical structures to specific

regions of the BZ directly.

In the E~ spectra of Irsn~ (Fig. 7), the first two small structures at 1.I and 1,4 eV result due

to transitions from z4(X~-W~) to zj(W(- Xi) around X, and from Qi(L~-W3) to

Qi(Lj W() about L respectively. The large peak centred at 1.75 eV reflects the presence of

parallel bands in the energy band picture and is attnbuted to transitions between the bands

A((X~- r() and Aj(Xi rj). Contribution to the peak also results from the transition between a small portion of degenerate band A~(rj~ L~ ) Iying just below the Fermi Ievel to the degenerate A~(r(~ Lj band and non-degenerate Ai (rj~ Lj band around L. The next

structure at 2.0 eV anses due to transition from the crossing of three bands, namely,

PtIni Ei LJ)

Ei spectra

~

Ausbi

~

,

3 ~~

Î ~

~

Î

0 2 3 ~ 5 0 2 3 ~ 5 6

E (evi E (eV)

Fig. 8. Fig. 9.

Fig 8. E2(w spectra of Ptlni calculated from the ]DOS value by assummg constant matnx elements.

Fig. 9. F~(w) spectra of AuSb2 calculated from the ]DOS value by assuming constant matfix elements.

(8)

12 ELECTRONIC AND OPTICAL PROPERTIES OF SOME INTERMETALLICS 1873

A~, Aj and A( to the upper Ai band. Transition from A~(ri~ L~ ) to parallel Ai (rj L( band is responsible for the associated structure at 2.25 eV. The well defined broad structure at

3.5 eV results due to transition between the middle portion of overlapping OEi and

OE~ band to parallel 0E4 and

OE~ bands.

In Ausb~ (Fig. 8), the first small peak at 0.55 eV has onginally been assigned to

L( L( transition. In addition to these well defined critical points, extended regions of the BZ also contribute to the peak. The next structure at 0.75 eV is ascribed to a transttion from the

partly filled degenerate band A~ to the bottom of the conduction band Ai around L. In the formation of the remainmg structures, significant contributions come from the r K region.

In this region there are five parallel bands, among which the lowest one is

OE~ (r(~ K~ ) which lies mostly in the valence band region, and the four other bands which have Au s-p and p-d

character mixed with Sb p character lie in the conduction band region Transitions between the

OE~ band and the group of aforesaid four conduction bands (OE~,

OE~, OE~ and OEj are responsible

for the formation of the next four consecutive structures at or near 1.5, 2.2, 3.25 and 4.6 eV

respectively In addition to the primary contribution coming from the r K region, the well

defined structure at 2,2 eV is also caused by the transition between (ii the bands

z4(W~-X)) and zj(Wi Xi around W and (i1) degenerate band ~~(r(~-Xj) and

Ai (fj Xi around 11

In the Ej(w ) spectra of Ptln~, r X and r K regions play a dominant rote, where most of the transitions occur between the filled antibonding band and the unoccupied band having mostly s-p character. The first peak at 0,5 eV can be interpreted as due to transition from the

antibonding band lying almost on the Fermi energy to the band Ai (rj~ Xi) around X. In the formation of the structure at 0.75 eV the largest contribution comes fiom the parallel bands

Qi Q~ around L. Transitions from the middle of Ai and A~ bands to A( band also take part in

it. The next peak around 2.3 eV is associated with the transition from the degenerate band A~ together with Ai to the upper Ai band m the middle of r-X region, and from

0E4 band to the

OEi band about K. The structure alongside ongmates due to transition from the

crossing of

OEj and

OE~ bands to the parallel band

OE~ near n Between 3 to 4 eV, a small structure is observed in E~ spectrum, whereas, a shoulder is seen in JDOS curve, Contributions to this

shoulder/structure come from ail of the irreducible wedge. The prominent structure at 4.25 eV

can be ascribed as due to transition between the crossing of

OEi and

OE~ bands and the higher

OEj band in r K region.

The Fermi surface cross sections of a number of bands ai shown in figures 10, 11 and 12, along two high symmetry planes for Irsn~, PtIn2 and Ausb~ respectively, The bands taking part in the formation of the Fermi surfaces are not similar in nature for the three mtermetallics, due to which, the topology of the Fermi surfaces are quite different, as is evident from the

figures. In Ausb~, the antibonding band connected to the s-like valence electrons of Sb-atom, lies entirely below the Fermi level, and hence does not contribute to the Fermi surface, However, a significant contribution comes from the intersection of the Fermi level with bands having s-p and p-d characters. In PtIn~, on the other hand, the antibonding band which is partially filled contnbutes considerably.

3. Conclusion.

The band structures of Irsnj, PtIn2 and Ausb~ have been rejôrted

m this paper for the first

time. The energy band picture has strong resemblance with the band structure results of the

fluonte structure binary intermetallics reported previously. The overall nature and ordenng of the bands are in good agreement with those studied earlier. The DOS and F~(w spectra along

with the Fermi surfaces have been presented and analysed.

(9)

uOE xTu w 2 @

~

, ,

x u w j x j w

Fig. 10. The Fermi surface cross-sections of Irsn~, la) plane rXL, (b) plane rXK. The hatched parts denote the occupied states,

x u x w x u x w

/ / ,

/ ,

1' ,

, / ,

, , / '

r r X 7 K r X

(QI 16) la) 16)

u x w x u x w

, /

, ,

,

/

~ /

~ /

, /

,

/ ,/

~/ , /~

/

r r x r r x

la) 16) la) 16)

Fig. Il. The Fermi surface cross-sections of PtIn2. Left hand parts plane rXL, nght hand parts, rXK The hatched parts denote the occupied states.

The overall shape of the bands of the three compounds seems to encounter a reasonable agreement, with only mmor differences m the relative order between Ievels, such as,

r(~ and rj~ states Iying at the top of the antibonding band. However, regarding the position of

the bands, with respect to the Fermi energy, Ausb~ exhibits a pronounced difference. The

antibonding band which is made up mainly of s-electrons of Sb, lies well below the Fermi energy, and does non contribute to the Fermi surface. This second X-site s band is very important to the Knight shift, while making but a small contribution, when present, to the

density of states at the Fermi level, and possibly to most other observables involving states at or near the Fermi surface. In the noble metal intermetallic AuGa~, the strong temperature

dependent susceptibility and Knight shift are found to differ anomalously from the other isoelectric and isostructural compounds AuIn2 and AUAIj [22]. This unusual behaviour of

Références

Documents relatifs

L’archive ouverte pluridisciplinaire HAL, est destinée au dépôt et à la diffusion de documents scientifiques de niveau recherche, publiés ou non, émanant des

2: Second proposed set-up: atoms are extracted from the cloud at x A,B and create a matter-wave grating when the wave-packets overlap at X; one detects this grating by shin- ing a

For 3+1 or 2+2 trapped fermions, the relevant decoupled asymptotic objects (DAOs), their internal energy levels unit int and ideal int and the difference (indicated by the letter

The study clearly show that although Al13 Fe4 010 and Al5 Co2 210 present similar surface structures under UHV, with the presence of well isolated transition metal atoms protruding

Maps of the surface Fermi level pinning energy, E a , relative to that obtained at the free end of the cantilever as a function of beam position under (a) compressive stress and

L’archive ouverte pluridisciplinaire HAL, est destinée au dépôt et à la diffusion de documents scientifiques de niveau recherche, publiés ou non, émanant des

Abstract.- The uniaxial stress dependence of several extremal cross-sections of the Fermi surface of lead has been determined using the results of simultaneous measurements of

states, of the position of the Fermi level at the surface, and of the surface recombination velocity, for various.. treatments of the surface