Optimization of GOPS-Based Functionalization Process and Impact of Aptamer Grafting on the Si Nanonet FET Electrical Properties as First Steps towards Thrombin Electrical Detection

A more detailed study of the extrapolation (Fig. - Hall mobilities in CdGePz.. The mobility values in the latter example are typical of those quoted for CdGeP, by

With these additional annealing steps after the high tem- perature co-evaporation process, four different types of absorbers were fabricated: high temperature co-evaporation (sample

X.U. Post-hydrogenation significantly re- duces the gap state density of LPCVD a-Si. Phosphorus and boron ion-implantation sho~v that .;PCVD a-Si has a higher doping

It is clear that the refractive index of the films increases with increasing annealing temperature and is presumably due to the increase in film packing density (decrease

The scanning electronic microscopy reveals that The surface morphology of all the compositions showed that the grain size decrease from about 2- 4 μm to about 1-2μm

Therefore, the authors aimed to study the effect of sintering temperature (Ts) on the DC, AC electrical resistivity, dielectric constant (e'), dielectric loss (tan b), Curie

The results of this work could be summarized as follows: the real dielectric constant e' and dielectric loss tan b decrease while the electrical conductivity a2(w) increases as

We perform model sensitivity studies over large ranges of bio- logical and chemical process parameters using a box model with a detailed atmospheric multiphase chemical mecha- nism