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Properties of Al-doped ZnO thin films grown bypulsed laser deposition on Si (100) substrates

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International Journal of Nanoparticles

Volume 6, Issue 2, 2013, Pages 93-102

Properties of Al-doped ZnO thin films grown by pulsed laser deposition on Si (100) substrates

Fouad KERMICHE, Adel TAABOUCHE, Faouzi HANINI, Sarah MENAKH, Abderrahmane BOUABELLOU, Yacine BOUACHIBA, Tahar KERDJA,

Chawki BENAZZOUZ, Mohamed BOUAFIA

Abstract: Undoped and Al-doped ZnO (AZO) polycrystalline thin films (Al: 3, 5 at.%) have been deposited at 450°C onto Si(100) substrates by pulsed laser deposition method. A KrF excimer (248 nm, 25 ns, 2 J/cm2) was used as laser source. The study of the obtained undoped and Al-doped ZnO thin films has been accomplished using X-ray diffraction (XRD), atomic force microscopy (AFM) and Rutherford backscattering spectrometry (RBS) techniques. The ZnO and AZO thin films deposited have been crystallised in hexagonal wurtzite-type structure with a strong (00.2) orientation. The grain sizes calculated from XRD patterns decrease from 38 to 26 nm with increasing Al doping. All nanoparticle thin films have a good surface morphology.

Keywords : ZnO, Al doping, pulsed laser deposition, PLD, X-ray diffraction, XRD, atomic force microscopy, AFM, Rutherford backscattering spectrometry, RBS, nanoparticles

Centre de Recherche en Technologies Industrielles - CRTI - www.crti.dz

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