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Test Structure for Ic(Vbe) Parameter Determination of Low Voltage Applications

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Academic year: 2021

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Figure

Fig. 1. Illustration of the different modelling of the temperature variation of the Si energy band gap.
Fig. 3. Schematic of the programmable configuration test cell implemented in a bandgap circuit core.
Fig. 5. Complete set of I C (V BE ) characteristic for a BJT in the temperature range of –50°C to 125°C, measured by a
Table 1. Comparison of uncertainties in the temperature values obtained from the sensor and that computed from
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