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Optical and vibrational properties of layered MoS2

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Optical and vibrational properties of layered MoS2

Alejandro Molina-Sánchez and Ludger Wirtz Theory, Modelling and Computational Methods

for Semiconductors

Manchester, January 2014

(2)

Layered materials. Semiconductor MoS

2

Two-dimensional materials. Search of new functionalities.

~6 eV ~1,9 eV

~6 eV

Graphene BN MoS2

See review Nature Nanotechnology 7, Nano Lett. 13, 358 (21013) . Incoming Review in Surface Science Reports

0 eV

SL Bulk

(3)

Layered materials. Semiconductor MoS

2

Two-dimensional materials. Search of new functionalities.

Electronic and optical properties Vibrational properties

~6 eV ~1,9 eV

~6 eV

Graphene BN MoS2

Direct/indirect bandgap depending on number of layers and strain

Higher efficiency of photoluminescence in single-layers

Phonon modes are very sensitive to layer

thickness.

Counter-intuitive trend of the in-plane mode.

See review Nature Nanotechnology 7, Nano Lett. 13, 358 (21013) . Incoming Review in Surface Science Reports

0 eV

SL Bulk

n-layers

single- layer

(4)

Layered materials. Semiconductor MoS

2

Two-dimensional materials. Search of new functionalities.

Electronic and optical properties Vibrational properties

~6 eV ~1,9 eV

~6 eV

Graphene BN MoS2

Direct/indirect bandgap depending on number of layers and strain

Higher efficiency of photoluminescence in single-layers

Phonon modes are very sensitive to layer

thickness.

Counter-intuitive trend of the in-plane mode.

See review Nature Nanotechnology 7, Nano Lett. 13, 358 (21013) . Incoming Review in Surface Science Reports

0 eV

SL Bulk

Ab-inito approach for the study of band structure, optical spectra, phonons

n-layers

single- layer

(5)

Electronic structure

Incoming review in Surface Science Reports

Interaction between layers

Beyond LDA. scGW-method Spinor fully described

Semi-core d-orbitals.

K M

Γ

Γ M K Γ M K Γ M K Γ

Conduction band is very sensitive to the

crystal structure and to the GW “flavour”

single-layer double-layer Bulk

(6)

Electronic structure. Strained single-layer.

Incoming review in Surface Science Reports

Strain changes the bandgap from direct to indirect

(7)

Optical properties. Excitonic effects

Phys. Rev. B 88, 045412 (2013). Incoming review in Surface Science Reports

e

e-h pairs interact and form the exciton

Energy difference Bethe-Salpeter Kernel h

X

Key parameters for reliable results

- Number of bands - k-sampling of the Brillouin zone

M

Γ

Exciton wf in k-space

(8)

Optical properties. Excitonic effects

single-layer

double-layer

bulk

Sharp peak comes from a very

localized exciton.

High DOS

Experimental confirmation

PRB 87, 201401(R) 2013

Similar spectra at the absorption

threshold

O pt ic al a bs or pt io n

Phys. Rev. B 88, 045412 (2013). Incoming review in Surface Science Reports

BSE w/o e-h

(9)

Optical properties. Excitonic effects

Incoming review in Surface Science Reports single-layer

bulk

(c)

X

A

X

T

Exciton wavefunctions (real-space)

(10)

Optical properties. Excitonic effects

Incoming review in Surface Science Reports

bulk

(c)

Exciton is confined in one layer Large interlayer distance

(11)

Vibrational properties.

Exp.

LDA

Raman spectroscopy - structural properties Anomalous behaviour of the phonon mode E2g

Increasing number of layers >> frequency decreases

(12)

Vibrational properties.

Exp.

LDA

Interlayer interaction?

Surface effects, changes in lattice parameter?

Dielectric screening?

(13)

Vibrational properties.

Exp.

LDA

Interlayer interaction?

Surface effects, changes in lattice parameter?

Dielectric screening?

Interlayer interaction... but considering farer neighbours, Mo-S interaction

Further examination of the force constant

(14)

Conclusions

Layered materials, and in particular MoS2, show interesting physical properties, very sensitive to the number of layers.

External strain can tune the bandgap and its character in MoS2 single- layer.

Optical properties and excitons: Very localized exciton at high energy (confirmed experimentally).

The anomalous trend of the in-plane phonon mode is due to the

interaction between sulphur and molybdenum atoms from different layers.

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Davide Sangalli and Andrea Marini

, Istituto di Struttura della Materia (ISM), Consiglio Nazionale delle Ricerche (CNR), Rome, Italy.

Kerstin Hummer

, University of Vienna.

Acknowledgements

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Thank you for your attention!

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