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THOMSON SEMICONDUCTEURS

Dans le document 38522 St EGREVE CEDEX Tel. 7658 (Page 28-54)

1·16

The LMl468 and LMl558 amplifiers constructed on range of analog applications.

• Summing amplifier

• Voltage follower

• Integrator

• Activa filter

• Function generator

dual operational inlended for a wide

The high gain and wide range of operating voltages provide superior perfor-mance in integrator, summing amplifier, and general feed back applications.

The internal compensation network (6 dBfoctave) insures stability in closed loop applications.

Non-inverting input 1 _ _ _ _

Vee _______ _

Inverting input 2 _ _ _ _ _

Non·inverting input

Back .ide bias:

Vee

PAD LAYOUT

: P303

PAD SIZE : 0.1 xO.lmm

DIE SIZE : L12xl.52mm

DIE THICKNESS : 0.315mm ± 0.025 METALLIZATION : AI (front side) PASSIVATION : Nitride

REVISION :A

QUALIFICATION

LOT CASE : ICB·") TOOO

• _ _ _ _ _ _ _ Output 1

II---Vee

+

April t987-112 43,Avenuede rEurope-18140VELIZY-VlLLACOUBLAY/FRANCE - Tel.: (1 )39.46.97.19 - TelexTCSF204780F - Telecopie:(1)39.46.52.64

1·17

The TL061 is low power J·FET input single operational amplifier. This J·FET input operational amplifier incorporates well matched, high voltage J·FET and bipolar transistors in a monolithic integrated circuit.

The device features high slew rates, low input bias and offsat currents, and low offsat voltage temperature coefficient.

a.ck side bi.s : Vee

J-FET

SPECIFICATIONS

PAD LAYOUT P884 PAD SIZE 0.12 x 0.12mm DIE SIZE 1.35 x 1.05mm DIE THICKNESS 0.375mm ± 0.025 METALLIZATION AI· Cu (front side) PASSIVATION Nitride

REVISION :A

QUALIFICATION

LOT CASE : (CB-l" T099

Vee

Balance

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1·19

The TL071 is low power J·FET input single operational amplifier. This J·FET input operational amplifl8r incorporates well matched, high voltage J·FET and bipolar transistors in a monolithic integrated circuit.

The device features high slew rates, low input bias and offset currents, and low offset vohage temperature coefficient.

Back.ide bias : Vee

J-FET

SPECIFICATIONS

PAD LAYOUT : P902 PAD SIZE : 0.12 x 0.12mm DIE SIZE : 1.72 x l.t4mm DIE THICKNESS : 0.375mm ± 0.025 METALLIZATION : AI • Cu (front side) PASSIVATION : Nitride

REVISION :A

QUALIFICATION

LOT CASE : (CB·l1) T099

Vee

null

Ap<1I 1987·1/2

43,Avenuedel'Europe' 78140VELlZY·VILLACOUBLAY1FRANCE· Tel: (1)39.46.97.19· Telex TCSF 204780F· Telecopie :(1 )39.46.52.64

'·25

The TL072is a low power J·FET well matched. high voltage grated circuit.

The device features high slew rale, offset voltage temperature coefficienl.

Non· inverting input 1

Vee

I nverting input 2

incorporating

n~onolithic inte-offset currents, and low

PAD LAYOUT PAD SIZE DIE SIZE DIE THICKNESS

: 0.t2xO.t2mm : t.70x2.tOmm : 0.375mm ± 0.025 METALLIZATION : AI •

Cu

(front side) PASSIVATION

QUALIFICATION LOT CASE

: Nitride

: (CB·tt) T099

April 1987·1/2 43. Avenue de I·Europe· 78140VELIZY-VILLACOUBLAY/FRANCE· Tei. : (1) 39.46.97.19· TelexTCSF 204780F· Telecopie: (1 )39.46.52.64

1·27

The TlD74 is a low power J-FET input quad operational amplifier incorpora-. ting well matched, high voltage J-FET and bipolar transistors in a monolithic integrated circuit.

The device features high slew rates, low input bias and offset currents, and low offset voltage temperature coefficient.

a.ck ,ide bi •• : Vee

J-FET

SPECIFICATIONS

PAD LAYOUT : P878

PAD SIZE :0.12xO.12mm

DIE SIZE : 2.86 x 1.89mm DIE THICKNESS : 0.375mm ± 0.025 METALLIZATION : AI -Cu (front side' PASSIVATION : Nitride

REVISION :A

QUALIFICATION

LOT CASE : IC8-2 CerIImic'TOl16

April 1987-1/2 43,AvenuadaI'Europe-78140VEUlY-VILLACOUBLAY/FRANCE - Tel. :(1'39.46.97.19 - Telex TCSF 204780F - Telecopie :(1 '39.46.52.64

'·29

The TL081 is 8 high speed ting wetl m81ched, high in1egretad circuit.

The device features high

low offset voltege temperature CoelIlC'''''L

IMck side bial : Vee

incorpora-8 monolithic currents, and

SPECIFICATIONS PAD LAYOUT : P902 PAD SIZE : 0.12

x

0.12mm DIE SIZE : 1.72 x 1.14mm DIE THICKNESS : 0.375mm ± 0.D25 METALLIZATION : AI·

Cu (front

side) PASSIVATION : Nitride

REVISION :A

QUALIFICATION

LOT CASE : ICB·111 T099

April 1887·1/2 43, Avenue de I'Europe - 78140VELIZY-VILLACOUBLAY/FRANCE· Tel. :(1 )39.46.97.19 - TelexTCSF204780F· Telecopie :(1)39.46.52.64

1-31

The TL082 is a high speed J·FET input dual operational amplifier incorpora' ting well matched, high voltage J·FET and bipolar transistors in a monolithic integrated circuit.

The device features high slew rates, low input bias and offset currents, and low offset voltage temperature coefficient.

a.c:k lido bioI: Vee

J-FET

SPECIFICATIONS

PAD LAYOUT PAD SIZE DIE SIZE DIE THICKNESS METALLIZATION PASSIVATION

QUALIFICATION LOT CASE

:P856

: 0.12 x 0.12mm : 1.70x2.1Omm : 0.375mm ± 0.025

AI • Cu (front sidel : Nitride

(CB·lll T099

Output 1

Vee

Output 2

April 1987·1/2

43,Avenuedel'Europe' 78140VEUZV·VILLACOUBLAY/FRANCE· Tel. ;(1139.46.97.19· Telex TCSF 204780F· Telecopie; (1139.46.52.64 1·33

The TL084 is a high speed J-FET input quad operational amplifiers incorpora-ting well matched, high voltage J-FET and bipolar transistors in a monolithic integrated circuit.

Thedevice features high slew rates, low input bias and offset current, and low offset voltage temperature coefficient.

Back .ieM bia. :

Vee

J-FET

SPECIFICATIONS

PAD LAYOUT : P878 PAD SIZE : 0.12 x 0.12mm DIE SIZE : 2.86 x 1.69mm DIE THICKNESS : 0.375mm ± 0.025 METALLIZATION : AI -Cu (front side) PASSIVATION : Nitride

REVISION :A

QUALIFICATION

LOT CASE : (C8-2 c.r.mlc) TOl16

4

April 1987-112 43. Avenue de I'Europe - 78140VELlZY-VILLACOUBLAY/FRANCE -Tal.: (1) 39.46.97.19 - Telex TCSF 204780F - Telecopie: (1 )39.46.52.64

1·35

The UAn6 programmable operational amplifier is characterized by high input impedance, low supply currents and low input noise over a wide range of ope-rating supply voltages.

Coupled with programmable electrical characteristics it is an extremaly versa-tile amplifier for use in high accuracy, low power consumption analog appli-cations.

Input noise voltage and current, power consumption, and input current can be optimized by a single resistor or current source that sets the chip quiescent current for nano-watt power consumption or for characteristics similar to the UA741.

Internal frequency compensation, absence of latch up, high slew rate and short-circuit protection assure ease of use in long time integrators, active filters, and sample and hold circuits.

Offoet null

Vee

Back side bi.s : V Cc

BIPOLAR

SPECIFICATIONS'

I

PAD LAYOUT X021

PAD SIZE 0.12xO.12mm

DIE SIZE 1.43 X 1.43mm DIE THICKNESS 0.375mm ± 0.025 METALLIZATION AI (front side) PASSIVATION Nitride

REVISION A

QUALI FICA TION

LOT CASE (CB-11) T099

s.t current

Offoet null

April 1987-1/2 43, Avenua de I"Europe . 78140VELlZY·VILLACOUBLAY/FRANCE - Tel. :11 )39.46.97.19 - TelexTCSF204780F - Telecopie: (1)39.46.52.64

1·39

Die prefix

number

.I

J LMl19 J LM319 J LM139 J LM339 J LM139A J LM339A J LM193

Dans le document 38522 St EGREVE CEDEX Tel. 7658 (Page 28-54)

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