1·16
The LMl468 and LMl558 amplifiers constructed on range of analog applications.
• Summing amplifier
• Voltage follower
• Integrator
• Activa filter
• Function generator
dual operational inlended for a wide
The high gain and wide range of operating voltages provide superior perfor-mance in integrator, summing amplifier, and general feed back applications.
The internal compensation network (6 dBfoctave) insures stability in closed loop applications.
Non-inverting input 1 _ _ _ _
Vee _______ _
Inverting input 2 _ _ _ _ _
Non·inverting input
Back .ide bias:
Vee
PAD LAYOUT
: P303
PAD SIZE : 0.1 xO.lmmDIE SIZE : L12xl.52mm
DIE THICKNESS : 0.315mm ± 0.025 METALLIZATION : AI (front side) PASSIVATION : Nitride
REVISION :A
QUALIFICATION
LOT CASE : ICB·") TOOO
• _ _ _ _ _ _ _ Output 1
II---Vee
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1·17
The TL061 is low power J·FET input single operational amplifier. This J·FET input operational amplifier incorporates well matched, high voltage J·FET and bipolar transistors in a monolithic integrated circuit.
The device features high slew rates, low input bias and offsat currents, and low offsat voltage temperature coefficient.
a.ck side bi.s : Vee
J-FET
SPECIFICATIONS
PAD LAYOUT P884 PAD SIZE 0.12 x 0.12mm DIE SIZE 1.35 x 1.05mm DIE THICKNESS 0.375mm ± 0.025 METALLIZATION AI· Cu (front side) PASSIVATION Nitride
REVISION :A
QUALIFICATION
LOT CASE : (CB-l" T099
Vee
Balance
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1·19
The TL071 is low power J·FET input single operational amplifier. This J·FET input operational amplifl8r incorporates well matched, high voltage J·FET and bipolar transistors in a monolithic integrated circuit.
The device features high slew rates, low input bias and offset currents, and low offset vohage temperature coefficient.
Back.ide bias : Vee
J-FET
SPECIFICATIONS
PAD LAYOUT : P902 PAD SIZE : 0.12 x 0.12mm DIE SIZE : 1.72 x l.t4mm DIE THICKNESS : 0.375mm ± 0.025 METALLIZATION : AI • Cu (front side) PASSIVATION : Nitride
REVISION :A
QUALIFICATION
LOT CASE : (CB·l1) T099
Vee
null
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'·25
The TL072is a low power J·FET well matched. high voltage grated circuit.
The device features high slew rale, offset voltage temperature coefficienl.
Non· inverting input 1
Vee
I nverting input 2
incorporating
n~onolithic inte-offset currents, and low
PAD LAYOUT PAD SIZE DIE SIZE DIE THICKNESS
: 0.t2xO.t2mm : t.70x2.tOmm : 0.375mm ± 0.025 METALLIZATION : AI •
Cu
(front side) PASSIVATIONQUALIFICATION LOT CASE
: Nitride
: (CB·tt) T099
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1·27
The TlD74 is a low power J-FET input quad operational amplifier incorpora-. ting well matched, high voltage J-FET and bipolar transistors in a monolithic integrated circuit.
The device features high slew rates, low input bias and offset currents, and low offset voltage temperature coefficient.
a.ck ,ide bi •• : Vee
J-FET
SPECIFICATIONS
PAD LAYOUT : P878
PAD SIZE :0.12xO.12mm
DIE SIZE : 2.86 x 1.89mm DIE THICKNESS : 0.375mm ± 0.025 METALLIZATION : AI -Cu (front side' PASSIVATION : Nitride
REVISION :A
QUALIFICATION
LOT CASE : IC8-2 CerIImic'TOl16
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'·29
The TL081 is 8 high speed ting wetl m81ched, high in1egretad circuit.
The device features high
low offset voltege temperature CoelIlC'''''L
IMck side bial : Vee
incorpora-8 monolithic currents, and
SPECIFICATIONS PAD LAYOUT : P902 PAD SIZE : 0.12
x
0.12mm DIE SIZE : 1.72 x 1.14mm DIE THICKNESS : 0.375mm ± 0.D25 METALLIZATION : AI·Cu (front
side) PASSIVATION : NitrideREVISION :A
QUALIFICATION
LOT CASE : ICB·111 T099
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1-31
The TL082 is a high speed J·FET input dual operational amplifier incorpora' ting well matched, high voltage J·FET and bipolar transistors in a monolithic integrated circuit.
The device features high slew rates, low input bias and offset currents, and low offset voltage temperature coefficient.
a.c:k lido bioI: Vee
J-FET
SPECIFICATIONS
PAD LAYOUT PAD SIZE DIE SIZE DIE THICKNESS METALLIZATION PASSIVATION
QUALIFICATION LOT CASE
:P856
: 0.12 x 0.12mm : 1.70x2.1Omm : 0.375mm ± 0.025AI • Cu (front sidel : Nitride
(CB·lll T099
Output 1
Vee
Output 2
April 1987·1/2
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The TL084 is a high speed J-FET input quad operational amplifiers incorpora-ting well matched, high voltage J-FET and bipolar transistors in a monolithic integrated circuit.
Thedevice features high slew rates, low input bias and offset current, and low offset voltage temperature coefficient.
Back .ieM bia. :
Vee
J-FET
SPECIFICATIONS
PAD LAYOUT : P878 PAD SIZE : 0.12 x 0.12mm DIE SIZE : 2.86 x 1.69mm DIE THICKNESS : 0.375mm ± 0.025 METALLIZATION : AI -Cu (front side) PASSIVATION : Nitride
REVISION :A
QUALIFICATION
LOT CASE : (C8-2 c.r.mlc) TOl16
4
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1·35
The UAn6 programmable operational amplifier is characterized by high input impedance, low supply currents and low input noise over a wide range of ope-rating supply voltages.
Coupled with programmable electrical characteristics it is an extremaly versa-tile amplifier for use in high accuracy, low power consumption analog appli-cations.
Input noise voltage and current, power consumption, and input current can be optimized by a single resistor or current source that sets the chip quiescent current for nano-watt power consumption or for characteristics similar to the UA741.
Internal frequency compensation, absence of latch up, high slew rate and short-circuit protection assure ease of use in long time integrators, active filters, and sample and hold circuits.
Offoet null
Vee
Back side bi.s : V Cc
BIPOLAR
SPECIFICATIONS'
I
PAD LAYOUT X021
PAD SIZE 0.12xO.12mm
DIE SIZE 1.43 X 1.43mm DIE THICKNESS 0.375mm ± 0.025 METALLIZATION AI (front side) PASSIVATION Nitride
REVISION A
QUALI FICA TION
LOT CASE (CB-11) T099
s.t current
Offoet null
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1·39
Die prefix
number
.I
J LMl19 J LM319 J LM139 J LM339 J LM139A J LM339A J LM193