Llnl
0.10I
c11.271 ~
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...
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ciC\i
Unit:mm
Unit: mm
14.14 ± 0.30
Package Dimensions (cont)
HN58CIOOl T Series (TFP·32DA)
8.0 32
I'
8.2 Max'I
17..,.
N
~
0
1 16
10.50
I
0.20± O.to
Unit:mm
O.45Max
:gr~~~~J:+0-50
_~
ci~~
0.5±0.11:!~~t-. ~ ~ ~~ . II
14.0 ± 0.2:cc,
0.08i@Hitachi 117
HN58VIOOI Series
131,072-word x 8-bit Electrically Erasable and Programmable CMOS ROM
HITACHI May 23,1995 Rev. 5.0
The Hitachi HN58V1001 is an electrically erasable and programmable EEPROM organized as 131,072-word x 8-bit. It realizes high speed, low power consumption, and a high level of reliability, employing advanced MNOS memory technology and CMOS process and circuitry technology. It also has a 128-byte page programming function to make its erase and write operations faster.
Features
• Low power dissipation: 20 mWIMHz, typ (active)
110 J.lW max (standby)
• Data polling and RDYlBusy
• Data protection circuit on power on/off
• Conforms to JEDEC byte-wide standard
• Reliable CMOS with MNOS cell technology
• lQ4erase/write cycles (in page mode)
• 10 years data retention
• Software data protection
• Write protection by RES pin
Ordering Information
Type no.
HN58V1 001 P-25
Access
time Package 250 ns 600 mil 32-pin
plastic DIP(DP-32) HN58V1 001 FP-25 250 ns 525 mil 32-pin
plastic SOP (FP-32D) HN58V1001T-25 250 ns 8 x 14 mm 32-pin
plastic TSOP (TFP-32DA)
Hitachi 119
HN58VIOOI Series
Pin Arral)gement
• HN58V1001 P/FP Series
Pin Description
• HN58V100H Series
o
Block Diagram
High Voltage Generator
Control Logic and Timing
Address
Absolute Maximum Ratings
Parameter Symbol Value Unit
Supply voltage "1 Vee -0.6 to +7.0 V
3. Including electrical characteristics and data retention.
Recommended DC Operating Conditions
Parameter Symbol Min Typ Max Unit
Capacitance (Ta = 25°C,
f= 1 MHz)
Parameter Symbol Min Typ Max Unit Test condition
Input capacitance*l Cin 6 pF Vin=OV
Output capacitance *1 Cout 12 pF Vout = OV
Note: 1. This parameter is periodically sampled and not 100% tested.
AC Characteristics (Ta = 0 to + 70°C, Vee = 2.7 to 5.5 V)
Test Conditions• Input pulse levels: 0.4 V to 2.4 V
o
V to Vee (RES pin)• Input rise and fall time : :0; 20 ns
• Output load: 1 TTL Gate + 1 00 pF
• Reference levels for measuring timing: 0.8 V. 1.8 V Read Cycle
Parameter Symbol Min Max Unit Test conditions
Address to output delay tACC 250 ns CE = OE = VIL. WE = VIH
CE to output delay tCE 250 ns OE = VIL. WE = VIH
OE to output delay tOE 10 120 ns CE = VIL. WE = VIH
Address to output hold tOH 0 ns CE = OE = VIL. WE = VIH
OE (CE) high to output floa(l tOF 0 50 ns CE = VIL. WE = VIH
RES low to output floa(l tOFR 0 350 ns CE=OE=VIL. WE=VIH
RES to output delay tRR 0 600 ns CE = OE= VIL. WE = V1H
Note: 1. tOF and tOFR are defined as the time at which the outputs achieve the open circuit conditions and are no longer driven.
Hitachi 123
HN58VIOOI Series
Read Timing Waveform
Address
): K
tACC
/
tOHtCE
\ /
toE tOF
High
Data Out / / / /~ Data Out Valid ~\l'1
tRR \\~
:LV
/ \ ~
Write Cycle
Test
Parameter Symbol Min*1 Typ Max Unit conditions
Address setup time tAS 0 ns
Address hold time tAH 150 ns
CE to write setup time (WE controlled) tcs 0 ns
CE hold time (WE controlled) tCH 0 ns
WE to write setup time (CE controlled) tws 0 ns
WE hold time (CE controlled) tWH 0 ns
OE to write setup time tOES 0 ns
OE hold time tOEH 0 ns
Data setup time tos 100 ns
Data hold time tOH 10 ns
WE pulse width (WE controlled) twp 250 ns
CE pulse width (CE controlled) tcw 250 ns
Data latch time tOl 750 ns
Byte load cycle tBlC 1.0 30 )Js
Byte load window tBl 100 )Js
Write cycle time twc 15'2 ms
Time to device busy tOB 120 ns
Write start time tow 250"3 ns
Reset protect time tRP 100 )Js
Reset low time tRES )Js
Note: 1. Use this device in longer cycle than this value.
2. twc must be longer than this value unless polling techniques or ROY/Busy are used. This device automatically completes the internal write operation within this value.
3. Next read or write operation can be initiated after tow if polling techniques or ROY/Busy are used. Read Timing Waveform (2)*3 '4 '6
Hitachi 125
Byte Write TImingWaveform(l) (WE Controlled)
Address
CE
WE
tOES OE
tos tOH
Din
tow
High-Z tOB
RDY/Busy
tRP
tRES RES
Vee
Byte Write TimingWaveform(2) (CE Controlled)
Address
tos tOH
Din
ROY/Busy
High-Z tOB
Hitachi 127
HN58VIOOI Series
Page Write Timing Waveform (1) (WE Controlled)
"1 Address AO to A16
Din
ROY/Busy
Vee
High-Z
1~
_ _ _ _ _ _ _ _ _ _~~H;g~
tow)
r---)(\----J
-Note: 1. A7 to A 16 are page addresses and must be same within the page write operation.
Page Write Timing Waveform (2) (CE Controlled)
"1
Address AO to A16
Din
ROY/Busy
Vee
High-Z
'---'xxxxx~=-I~---~~
tow)
Note: 1. A 7 to A 16 are page addresses and must be same within the page write operation.
Hitachi 129
HN58VIOOI Series
Data Polling Timing Waveform·
Address An
CE
WE
OE
1/07
Toggle bit.
This device provide another function to determine the internal programming cycle. If the EEPROM set to read mode during the internal programming Toggle Bit Waveform
Address
VOS
tOES
twc
cycle, 1106 will charge from "1" to "0" (toggling) for each read. When the internal programming cycle is finished, toggling of 1106 will stop and the device can be accessible for next read or program.
Next mode
Software Data Protection Timing Waveform (1) (in protection mode)
Vcc
WE
J
tSlC
Address 5555 AAAAor 5555 Write Address
2AAA
Data AA 55 AO Write Data
Software Data Protection Timing Waveform (2) (in non-protection mode)
Vcc twc
CE
WE
Address 5555 AAAA or 5555 5555 AAAA or 5555
2AAA 2AAA
Data AA 55 80 AA 55 20
twc
) h .
Normal active
~
mode
Hitachi 131
Functional Description
Automatic Page Write
Page-mode write feature allows 1 to 128 bytes of data to be written into the EEPROM in a single write cycle. Following the initial byte cycle, an additional 1 to 128 bytes can be written in the same manner. Each additional byte load cycle must be started within 30 JlS from the preceding falling edge of WE or CEo When CE or WE is kept high for 100 J.ls after data input, the EEPROM enters write mode automatically and the input data are written into the EEPROM.
DataPoUing
Data polling allows the status of the EEPROM to be determined. If EEPROM is set to read mode during a write cycle, an inversion of the last byte of data to be loaded outputs from Jl07 to indicate that the EEPROM is performing a write operartion.
RDYlBusy Signal
RDY/Busy signal also allows status of the EEPROM to be determined. The RDYlBusy signal has high impedance except in write cycle and is lowered to VOL after the first write signal. At the end of a write cycle, the RDYlBusy signal changes state to high impedance.
RESSignal "
When RES is low, the EEPROMcannot be read or programmed. Therefore, data.can be protected by keeping RES low when Vee is switched. RES should be high during read and programming because it dosen't provide a latch function.
Vee
WE ,CE Pin Operation
During a write cycle, addresses are latched by the falling edge of WE or CE, and data is latched by the rising edge of WE or CE.
WritelErase Endurance and Data Retention Time
The endurance is 1 ()4 cycles in case of the page programming and 103 cycles in case of the byte programming (1 % cumulative failure rate). The data retention time is more than 10 years when a device is page-programmed less than 1()4 cycles.
Data Protection
1. Data Protection against Noise on Control Pins (CE, OE, WE) during Operation
During readout or standby, noise on the control pins may act as a trigger and turn the EEPROM to programming mode by mistake.
To prevent this phenomenon, this device has a noise cancelation function that cuts noise if its width is 20 ns or less in programming mode.
Be careful not to allow noise of a width of more than 20 ns on the control pins.
WE - - - . . . 3 V
2. Data protection at Vee on/otT
When Vee is turned on or off, noise on the control pins generated by external circuits (CPU, etc) may turn the EEPROM to programming mode by mistake. To prevent this unintentional programming, the EEPROM must be kept in unprogrammable state by using a CPU reset signal to RES pin. RES pin should be kept at VSS level when Vee is turned on or off.
The EEPROM breaks off programming operation when RES becomes low, programming operation doesn't finish correctly in case that RES falls low during programming operation. RES should be kept high for 15 ms after the last data input.
Vee
---.I
IL-I _I
RES
prj"minhibll Program Inhibit
!
~ WE