RECOMMENDED OPERATING CONDITIONS IReferenced to VSS" Ground I
Parameter Symbol Min Typ Ma. Unit Notes
Average VOO Power Supply Current IDDl
Vee Power Supply Current ICC
Average Vas Power Supply Current ISS
Standby VOO Power Supply Current IDD2
Average VOO Power Supply Current during IDD3
"RAS only" cycles
Operation at higher cycle rates with reduced ambient temperatures and higher power disSipation IS permiSSible prOVided that all ac parameters are met.
2. All voltages referenced to VSS.
3. Output voltage Will swing from VSS to VCC when enabled, with no output load. F or purposes of maintain 109 data 10 standby mode, VCC may be reduced to VSS without affecting refresh operations or data retention. However, the VOH(mlnl specifica·
tion is not guaranteed in thiS mode.
4. Device speed IS not guaranteed at input voltages greater than TTL levels (0 to 5 v).
5. Several cycles are requ Ired after power-up before proper device operation is achieved. Any 8 cycles which perform refresh are adequate for this purpose.
Min Typ Ma. Units Notes measurement of thiS parameter.
10.0V" VO u, " +10V.
11. Effective capacitance is calculated from the equation:
c
==-6.0 with 6.V = 3 volts.t;V
EFFECTIVE CAPACITANCE (Full operating voltage and temperature range, periodically sampled rather than 100% tested) Note 11
Characteristic Symbof Ma. Unit
Input Capacitance lAO-AS). D;n. CS C;nIEFF) 5.0 pF
RAS, CAS, WRITE 10.0
Output Capacitance CoutIEFF) 7.0 pF
ABSOLUTE MAXIMUM RATINGS (See Notes 1 and 2) ARE EXCEEDED. Functional operation should be restricted to RECOMMENDED voltages to tt-:IS high Impedance C!fCUlt OPERATING CONDITIONS. Exposure to higher than recommended voltages
for e)(tended periods of time could affect deVice reliability. VSS must be applied prior to Vec and VOO. VBS must also be the last power supply switched off.
AC OPERATING CONDITIONS AND CHARACTERISTICS (Read, Write, and Read-Modify-WriteCycles)
RECOMMENDED AC OPERATING CONDITIONS
IVDD"'2 v' '0%, vee' 5.0 v' '0%,'JBB
-5.0 v, '0%, VSS a V, TA "0to
700e)Notes " 5, '2,'B
MCM.a27AC' MCM.a27AC2 MCM.a27AC3 MCM.a27AC4
P.rlmeter Symbol Min M •• Column Address Strobe Hold Time 'CSH 120 Row to Column Strobe Lead Time 'ReO 15 40
14.Assumes that tACO"'; tRCO(max).
15. Assumes that tRCD ~ tACO (max).
16. Measured With a !oad CirCUit equivalent to 2 TTL loads and 100 pF,
17.0peration within the tRCO(msx) limit Insures that tRAc(max) can be met. tRCO(max) is specified as a reference point only~ If tRCD is greater than the specified tRco(max) limit, then access time is controlled exclusively by tCAC'
Min M •• Min M •• Min M .. Unit. Not .. or read-modify write cycles.
20. twcs, tewD, and tAWD are not restrictive operating 'the condition of Data Out (at access time) is indeterminate.
MCM4027A
READ CYCLE TIMING
AAS V1HC
V IL
CAS VIHC
V,L
ADDRESSES V,H
V'C
Dout
1+
1
,1---;
i--- i--- i--- i--- i--- i--- 1 ' 1
tAAS
"'-'AA .. -
----I
'AC
-. ---+1
,
IRSH----~----.. :
i / ' - - - + - - - t - - - . J i •
ji I tCSH
.r----
t A P iI f.-.. ---
tRCO---· .. ---tCAS ---.-~ 14---- tCAP---1
:;
'--_+--_ _ _---.JI Yr
I II
1 'ACS-j.--.j
! -.-J,
A C H1----WRITE CYCLE TIMING
AAS
ADDRESSES
r
--1
:
~-~--.-.
tARVI~~---'~~
__________________________________-J~
! ~---t R-C-D---:-;t+~-"'C:; .. ~;;f<<-. :;=:::~:-'-~R~:~SH. -~-~:.
tet: :V
~~~ ---ir-1i---'---~~~
______________~/..-'
-~
i
tAAHtAsA---k--·...i~· -.~ lAse--;'..., ;"tCAH'"
~',: ~ A:d~;" ~ ;~~,:s~
~~«~'---IWCS i _________ ;... tWCH...j .... "twp . .
V~H,~.~::>.L::..A-""_L-
;,.L.'Lj<'~,----",--+-I ---t-r-_---4--"m~~~,~'I_L:~.A..-~~~,.
L.- . ! '
tWCR'
r--.... -- --- , ...
-tOHA----;--·..- tRWL -
..,
;
: tcsc--r
f4--tCH-i
cs V~~L"'-"'~:-Jr1i.~, ~~.---.:7":~,\' t'~<>z</ijh~~
..
tCHR....
tCAG
.,
lOF f.- -+--.; ... - I OOH
-VOH
)
VALIDDout Open
DATA
VOL
,
j4 tRAG
MCM4027A
READ-MODIFY-WRITE TIMING
AAS
ADDRESSES
WRITE
cs
°out V,HC
V,L
r----·---'AR
.,
I
--- t Awe --.-.---tAAS ._...
-I _ _ -++-_ _ '_RC_O-[-- - -+1
--V1HC
----XI
V,L
f---+---~
V,HC V,L
V,H V,L
I r
!l----.tRwD--..j ...
-tcwL!
I
ItACS' ~ f4--- .. _-tCWD----
---r---tAWL----1
22~~~__r"---~1
!~---i: '
+ - - - l C H R
'ese -
-..I1+ te
H j ! I!
r- 'wp--l
I, I'
----. tCAG
---...!+--'b6H---..
i :
IRAS ONL Y REFRESH TIMING
ADDRESSES
°out
V,HC V,L
tAAS-tRAH
--1
tRe
---- --.j
---, I
Ir---~
I tRP
---.I
VV',HL=====1_tASAROW ~~---Ad-d-,e-,,-~
.I ~
VOH
VOL
-PAGE MOOE REAO CYCLE
~---tRAS---RAS
VIHC-V'L
-C-AS ViHC
-V,L
VIH
-Addresses VIL -=Y"'CC:C:=V'1L-=:1'1..C>=="""~Y
DOut
Write
PAGE MOOE WRITE CYCLE
RAS
CAS
VIH Addresses V JL
-cOs
DOUT
Wnte
D,n
Row Addresses Columns
s:
., 16.384-BIT DYNAMIC RANDOM ACCESS MEMORY
The MCM4116B is a 16.384-bit. high-speed dynamic Random,
Access Memory designed for high-performance. low-cost applications in mainframe and buffer memories and peripheral storage. OrganIZed as 16.384 one-bit words and fabricated using Motorola's highly reliable N-channel double-polysilicon technology.this device optimizes speed. power. and density tradeoffs.
By multiplexing row and column address inputs. the MCM4116B requires only seven address Itnes and permits packaging in Motorola's standard 16-pm dual in-line packages. This packaging technique allows high system density and is compatible with widely available automated test and insertion equipment. Complete address decoding IS done on chip with address latches incorporated.
All inputs are TIL compatible. and the output is 3-state TIL compatible. The data output of the MCM4116B is controlled by the column address strobe and remains valid from access time until the column address strobe returns to the high state. This·output scheme allows higher degrees of system design flexibility such as common input/output operation and two dimensional memory selection by decoding both row address and column address strobes.
The MCM411 6B mcorporates a one-transistor cell design and dynamic storage techniques. with each of the 128 row addresses requiring a refresh cycle every 2 milliseconds.
•
Flexible Timmg with Read-Moaify-Write. RAS·Only Refresh. and Page-Mode Capability•
Industry Standard 16-Pin Package• 16.384 X 1 OrganIZation
• ±10% Tolerance on All Power Supplies
• All Inputs are Fully TIL Compatible
• Three·State Fully TIL-Compatible Output
• Common 1/0 Capability When Using "Early Write" Mode
• On-Chip Latches for Addresses and Data In
• Low Power Dissipation - 463 mW Active. 20 mW Standby(Max)
• Fast Access Time Options:150 ns - MCM4116BP-15. BC-15 200 ns - MCM4116BP-20. BC-20 250 ns - MCM4116BP-25. BC-25 300 ns - MCM4116BP-30. BC-30
•
Easy Upgrade from 16-Pin 4K RAMs ABSOLUTE MAXIMUM RATINGS ISee NotelRating Symbol Value Unit
NOTE Permanent deVice damage may occur if ABSOLUTE MAXIMUM RATINGS c:re ex-ceeded. Functional operation should be restncted to RECOMMENDED OPERAT-ING CONDITIONS. Exposure to higher than recommended voltages for extended periods of time could a1fect device reliability
MOS
FRIT-SEAL CERAMIC PACKAGECASE 620 voltages to this high Impedance cirCUit.