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SECTION 13
ELECTRICAL SPECIFICATIONS 13.1 Introduction
This section contains electrical and timing specifications for the MC68HC805P18.
13.2 Maximum Ratings
13.3 Operating Temperature Range
NOTE
This device contains circuitry to protect the inputs against damage due to high static voltages or electric fields; however, it is advised that normal precautions be taken to avoid application of any voltage higher than maximum-rated voltages to this high-impedance circuit.
For proper operation, it is recommended that VIN and VOUT be constrained to the range VSS≤ (VIN or VOUT)≤ VDD. Reliability of operation is enhanced if unused inputs are connected to an appropriate logic voltage level (for instance, either VSS or VDD).
Rating Symbol Value Unit
Supply Voltage VDD –0.3 to +7.0 V
Input Voltage VIN VSS –0.3 to VDD + 0.3 V
Factory Mode (IRQ Pin Only) VIN VSS –0.3 to 2 x VDD V
Current Drain Per Pin Excluding VDD and VSS I 25 mA
Storage Temperature Range TSTG –65 to +150 °C
NOTE: Voltages referenced to VSS
Rating Symbol Value Unit
Operating Temperature Range MC68HC805P18 (Standard) MC68HC805P18 (Extended) MC68HC805P18 (Automotive)
TA
TL to TH 0 to +70 –40 to +85 –40 to +125
°C
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13.4 Thermal Characteristics
13.5 Power Considerations
The average chip-junction temperature, TJ, in°C, can be obtained from:
TJ = TA + (PD× θJA) (1)
where:
TA = Ambient temperature,°C
θJA = Package thermal resistance, junction to ambient,°C/W.
PD = PINT + PI/O
PINT = IDD×VDD watts (chip internal power)
PI/O = Power dissipation on input and output pins (user-determined) For most applications, PI/O « PINT and can be neglected.
The following is an approximate relationship between PD and TJ (neglecting PI/O):
PD = K÷(TJ + 273°C) (2)
Solving equations (1) and (2) for K gives:
K = PD× (TA + 273°C) +θJA× (PD)2 (3) where K is a constant pertaining to the particular part. K can be determined from equation (3) by measuring PD (at equilibrium) for a known TA. Using this value of K, the values of PDand TJ can be obtained by solving equations (1) and (2) iteratively for any value of TA.
Characteristic Symbol Value Unit
Thermal Resistance Plastic
SOIC
θJA 60
60
°C/W
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ELECTRICAL SPECIFICATIONS
Characteristic Symbol Min Typ Max Unit
Output Voltage
Output High Voltage
(ILoad = –0.8 mA) PA0–PA7, PB5–PB7, PC0–PC7, PD5/CKOUT
VOH VDD –0.8 — — V
Output Low Voltage
(ILoad = 1.6 mA) PA0–PA7, PB5–PB7, PC0–PC7, PD5/CKOUT
VOL — — 0.4 V
Input High Voltage
PA0–PA7, PB5–PB7, PC0–PC7, PD5/CKOUT, TCAP/PD7, IRQ, RESET, OSC1
VIH 0.7 x VDD — VDD V
Input Low Voltage
PA0–PA7, PB5–PB7, PC0–PC7, PD5, TCAP/PD7, IRQ, RESET, OSC1
VIL VSS — 0.2 x VDD V
Supply Current Run
Wait (see Note 3) Stop (see Note 8)
25°C I/O Ports Hi-Z Leakage Current
PA0–PA7, PB5–PB7, PC0–PC7, PD5/CKOUT, TCAP/PD7
IIL — — ±10 µA
I/O Ports Switch Resistance
(Pullup Enabled PA0–PA7) RPTA 62 — 102 k
A/D Ports Hi-Z Leakage Current
PC3–PC7 IIL — — ±1 µA
Input Current
RESET, IRQ, OSC1 IIN — — ±1 µA
Capacitance
Ports (as Input or Output) RESET, IRQ EEPROM Program/Erase Time (128 Byte Array)
Byte
Block (Erase Only) Bulk (Erase Only)
—
Low Voltage Reset Voltage 3.6 3.8 — V
NOTES:
1. All values shown reflect average measurements.
2. Typical vlaues at midpoint of voltage range, 25 °C only.
3. Wait IDD with active systems: Timer, SIOP, and A/D.
4. Run (Operating) IDD, Wait IDD: Measured using external square wave clock source (fosc = 4.2 MHz), all inputs 0.2 V from rail; no dc loads, less than 50 pF on all outputs, CL = 20 pF on OSC2
5. Wait, Stop IDD: All ports configured as inputs, VIL = 0.2 V, VIH = VDD –0.2 V 6. Stop IDD measured with OSC1 = VSS
7. Wait IDD is affected linearly by the OSC2 capacitance.
8. Stop IDD maximum values given with LVR option enabled.
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13.7 Active Reset Characteristics
13.8 A/D Converter Characteristics
(VDD = 4.5 Vdc ±10%, VSS = 0 Vdc, TA = –40 °C to +125 °C, unless otherwise noted)
Rise Time Fall Time Pulse Width CLoad Pullup
0.5µs 13 ns 2.4 µs 50 pF 10 K
1.0µs 20 ns 2.7µs 100 pF 10 K
2.5µs 20 ns 2.7µs 250 pF 10 K
NOTE: VDD = 4.5 Vdc, VSS = 0 Vdc, TA = 125°C
Characteristic Min Max Unit Comments
Resolution 8 8 Bits
Absolute Accuracy
(VDD ≥VREFH > 4.5) — ±1 1/2 LSB Including quantization Conversion Range
VREFH
VSS VSS
VREFH
VDD V A/D accuracy may decrease proportionately as VREFH is reduced below 4.5
Input Leakage
AD0, AD1, AD2, AD3 VREFH
—
—
±1
±1
µA µA Conversion Time
(Includes Sampling Time) 32 32 tAD*
Monotonicity Inherent (Within Total Error)
Zero Input Reading 00 01 Hex Vin = 0 V
Full-Scale Reading FE FF Hex Vin = VREFH
Sample Time 12 12 tAD*
Input Capacitance — 12 pF
Analog Input Voltage VSS VREFH V
*tAD = tcyc if clock source equals MCU
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ELECTRICAL SPECIFICATIONS Rev. 1.0
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13.9 SIOP Timing
(VDD= 4.5 Vdc ±10%, VSS = 0 Vdc, TA = –40 °C to +125 °C, unless otherwise note)
Figure 13-1. SIOP Timing Diagram
Number Characteristic Symbol Min Max Unit
Operating Frequency Master
Slave
fSIOP(M) fSIOP(S)
1 dc
1 1
fOP
1
Cycle Time Master Slave
tSCK(M) tSCK(S)
1
—
1 1
tCYC
2 SCK Low Time tCYC 238 — ns
3 SDO Data Valid Time tv — 200 ns
4 SDO Hold Time tHO 0 — ns
5 SDI Setup Time tS 100 — ns
6 SDI Hold Time tH 100 — ns
NOTES:
1. fOP = fOSC ÷2 = 2.1 MHz max; tCYC = 1 ÷fOP
2. In master mode, the SCK rate is determined by the programmable option in MOR1.
SDI SDI SDI SDI
SDI SDI SDI BIT 7
SCK
t6 t1
t5
t3 t4
t2
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13.10 OSC Out Timing
Figure 13-2. OSC Out Timing
NOTE
All timing is shown with respect to 20% and 70% VDD. Maximum rise and fall times assume 44% duty cycle. Minimum rise and fall times assume 55% duty cycle
Characteristic Symbol Min Max Unit
Cycle Time 1* 476 — ns
Rise Time 4* 3.5 12 ns
Fall Time 5* 7.5 27.5 ns
Pulse Width 2 and 3* 200 — ns
*Refer to Figure 13-2
OSC OUT
(2) (3)
(4) (5)
(1)
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ELECTRICAL SPECIFICATIONS Rev. 1.0
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13.11 Control Timing
(VDD= 5.0 Vdc ±10%, VSS = 0 Vdc, TA = –40 °C to +125 °C, unless otherwise note)
Characteristic Symbol Min Max Unit
Frequency of Operation Crystal Option External Clock Option
fOSC —
dc
4.2 4.2
MHz Internal Operating Frequency
Crystal (fosc÷2) External Clock (fosc÷2)
fOP —
dc
2.1 2.1
MHz
Cycle Time tCYC 476 — ns
Crystal Oscillator Startup Time tOXOV — 100 ms
Stop Recovery Startup Time (Crystal Oscillator) tILCH — 100 ms
RESET Pulse Width tRL 1.5 — tCYC
Interrupt Pulse Width Low (Edge-Triggered) tILIH 125 — ns
Interrupt Pulse Period tILIL * — tCYC
OSC1 Pulse Width tOH, tOL 200 — ns
A/D On Current Stabilization Time tADON — 100 µs
RC Oscillator Stabilization Time (A/D) tRCON — 5.0 µs
* The minimum period tILIL should not be less than the number of cycles it takes to execute the interrupt service routine plus 21 tCYC.
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PCHPCL
OSC12 RESET
INTERNAL INTERNAL ADDRESS BUS13FFE3FFF
V DDV DD THRESHOLD (1–2 V TYPICAL)
t VDDR 4064
t CYC t CYC
tRL
INTERNAL DATA BUS1
3FFE3FFE3FFE3FFENEW PC3FFF NOTES: 1.Internal timing signal and bus information not available externally. 2.OSC1 line is not meant to represent frequency. It is only used to represent time. 3.The next rising edge of the PH2 clock following the rising edge ofRESET initiates the reset sequence.
NOTE 3
NEWNEWOP CODEPCLPCH
NEW PCNEW PC OP CODE
NEW PC
CLOCK1 Figure 13-3.Power-On Reset and External Reset Timing Diagram
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MECHANICAL SPECIFICATIONS
This section provides package dimension drawings for the 28-pin dual in-line (DIP) or 28-pin small outline (SOIC) packages.
To make sure that you have the latest case outline specifications, contact one of the following:
• Local Motorola Sales Office
• Motorola Mfax
– Phone 602-244-6609
– EMAIL rmfax0@email.sps.mot.com
• Worldwide Web (wwweb) at http://design-net.com
Follow Mfax or wwweb on-line instructions to retrieve the current mechanical specifications.
14.2 28-Pin Dual In-Line Package (Case #710)