[PDF] Top 20 UV laser controlled quantum well intermixing in InAlGaAs/GaAs heterostructures

... Introduction GaAs and InP based heterostructures are the material of choice for the fabrication of active photonic ...chip. In order to produce cost-effective PICs, selective area bandgap control of ... Voir le document complet

... for laser doses for up to N = 5 pulses, which is followed by a weak dependence for 4 ≤ N < ...of laser ablation, which may remove the oxygen rich layer created near the surface of the irradiated ... Voir le document complet

... GaAsSb/GaAs quantum well 共QW兲 structures have at- tracted considerable attention for their potential application in optoelectronic and electronic ...are controlled by the Sb ...tion ... Voir le document complet

... difference in amplitude at high magnetic ...levels in the AlAs quantum well are significantly broader due to the inevitably much lower mobility associated with the proximity of Si δ-doping ... Voir le document complet

... atoms in an optical lattice offers high controllability and robust quan- tum coherence properties, which makes it an attractive system for many applications such as quantum simulation of solid state systems ... Voir le document complet

... plasma in order to remove any possible contaminant before being loaded into the MBE ...a GaAs buffer layer, was deoxidized at 600°C under As flux, before a thin GaAs layer was grown to smooth out the ... Voir le document complet

... vertically-aligned GaAs nanowires can be produced. Then, the deposition of epitaxial AlGaAs shells on GaAs nanowires was demonstrated. By reducing the nanowire aerial density [r] ... Voir le document complet

... / La version de cette publication peut être l’une des suivantes : la version prépublication de l’auteur, la version acceptée du manuscrit ou la version de l’éditeur. For the publisher’[r] ... Voir le document complet

... (Received 18 January 2015; accepted 27 April 2015; published online 6 May 2015) We investigated a semiconductor heterostructure based on InGaAsP multi quantum wells (QWs) using optical characterizations and ... Voir le document complet

... up in QD1 when the excitation energy is set to the second resonance E 2 of ...energies in a decreasing magnetic ...observed in undoped QDs [ 20 ]. The reason for the drastic change in DNP ... Voir le document complet

... scheme in a WDM system using a single-section quantum well passive MLL [11] as the ...modulators. In this work a 16 channel MLL has been used to transmit a line rate of 200 Gb/s over 3 km SMF ... Voir le document complet

... lasing in N 2 + ...effective in this ...generated in a mismatched BBO-crystal and injected ∼ 300 fs after the 800 nm pump pulse, leading to amplification of the lasing signal by a factor ∼ ...shown ... Voir le document complet

... account in the rest of the paper in order to study finer scale excitonic ...hexagonal quantum dot with arm- chair edges is shown in the inset of ... Voir le document complet

... evidenced in a zoom of the solution around the shock, that is provided in Figure ...p in logarithmic scale. In order to compare methods with similar shock-capturing properties, the horizontal ... Voir le document complet

... i in eq. (2) should therefore include different corrections. In fact α i and R i are not really ...but, in all samples, the choice was made in such a way that the relative weight of each phonon ... Voir le document complet

... Keywords: Quantum dots, optical selection rules A large variety of promising applications for self assem- bled semiconductor quantum dots in photonics and spin electronics are based on the ... Voir le document complet

... graphene quantum dots with zigzag ...graphene quantum dots can be controlled by the vertical electric ...isolated in a charge neutral structure by the application of an electric field, ... Voir le document complet

... weakens in general the covalent bonds and this can induce structural ...mission in CNTs in ethanol at 532 and 1064 nm is reduced for smaller power levels than for carbon black in distilled ... Voir le document complet

... tested in this study is shown in ...one in the middle p-doped layer in order to test the two active regions separately ...purposes兲. In the following discussion, the bias polarity is ... Voir le document complet

... Electron-photon processes are accounted for using two pairs of levels (one in conduction band and one in valence band) at which lasing occurs. It figures out the two possible modes as selected by the ... Voir le document complet