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[PDF] Top 20 From Silicon to Germanium Nanowires : growth processes and solar cell structures

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From Silicon to Germanium Nanowires : growth processes and solar cell structures

From Silicon to Germanium Nanowires : growth processes and solar cell structures

... back to the past years in France, it is great. Thanks to French ...Especially to the people in Polytechnique who works in graduate school, housing office, restaurant, material office, library, ... Voir le document complet

175

Ultra-low reflection porous silicon nanowires for solar cell applications

Ultra-low reflection porous silicon nanowires for solar cell applications

... Porous Silicon NanoWires (PSiNWs) were fabricated on silicon substrate using metal assisted chemical etching ...length to the etching time was obtained and the change in the ... Voir le document complet

11

Building blocks development for defect-free growth of GaAs on silicon for tandem solar cells

Building blocks development for defect-free growth of GaAs on silicon for tandem solar cells

... on silicon of GaAs, and more generally of III-V semiconductors, is a very attractive and promising route for the production of high efficiencies multijunctions devices in the manner of those ... Voir le document complet

5

Silicon surface passivation and epitaxial growth on c-Si by low temperature plasma processes for high efficiency solar cells

Silicon surface passivation and epitaxial growth on c-Si by low temperature plasma processes for high efficiency solar cells

... tion solar cells obtained during this work and that allowed us to highlight the main troubles and achievements observed during this ...cut and measured at INES. The first thing ... Voir le document complet

229

Atomic scale investigation of silicon nanowires and nanoclusters

Atomic scale investigation of silicon nanowires and nanoclusters

... as solar cells [11] and biosensor ...used to elaborate SiNWs: “top-down” or ...Wagner and Ellis in 1964 [13], is the most widely used. According to this mechan- ism, the growth ... Voir le document complet

7

Synthesis of large-area and aligned copper oxide nanowires from copper thin film on silicon substrate

Synthesis of large-area and aligned copper oxide nanowires from copper thin film on silicon substrate

... According to previous investigations, it seems very difficult to grow aligned metal oxide nanowires from pure metal thin films just by thermal annealing as mentioned in [ 17 , 18 ] and ... Voir le document complet

10

Synthesis of large-area and aligned copper oxide nanowires from copper thin film on silicon substrate

Synthesis of large-area and aligned copper oxide nanowires from copper thin film on silicon substrate

... According to previous investigations, it seems very difficult to grow aligned metal oxide nanowires from pure metal thin films just by thermal annealing as mentioned in [ 17 , 18 ] and ... Voir le document complet

9

3D growth of silicon nanowires under pure hydrogen plasma at low temperature (250 degrees C)

3D growth of silicon nanowires under pure hydrogen plasma at low temperature (250 degrees C)

... sensor and the integration of its detection electronics on the same platform ...of silicon nanowires synthesis have been ...Wagner and Ellis [4], which uses gold as catalyst and silane ... Voir le document complet

21

Silicon nanowires based resistors as gas sensors

Silicon nanowires based resistors as gas sensors

... exposure to ammonia cycling tests ...found to indicate a quasi reversible trend suggesting that SiNWs could be reusable after ...related to the chemical species contained in the incense ...products ... Voir le document complet

19

Transport properties and functional devices on CVD grown Silicon nanowires

Transport properties and functional devices on CVD grown Silicon nanowires

... mBar and subsequently purged with a constant Argon flow for several ...done to prevent any oxygen con- ...temperature and the samples annealed for various time ...order to study the solid state ... Voir le document complet

103

Morphology Transition of ZnO from Thin Film to Nanowires on Silicon and its Correlated Enhanced Zinc Polarity Uniformity and Piezoelectric Responses

Morphology Transition of ZnO from Thin Film to Nanowires on Silicon and its Correlated Enhanced Zinc Polarity Uniformity and Piezoelectric Responses

... films and nanostructures have received over the last decade an increasing interest in the field of piezoelectricity, but their formation mechanisms on silicon when using pulsed-liquid injection metal- ... Voir le document complet

29

Effect Of Junction Quality On The Performance Of A Silicon Solar Cell

Effect Of Junction Quality On The Performance Of A Silicon Solar Cell

... a silicon solar cell is ...the solar cell, the continuity equation of excess minority carriers is solved with boundary conditions taking into account the intrinsic junction ... Voir le document complet

15

Comparative Studies of the Growth and Characterization of Germanium Epitaxial Film on Silicon (001) with 0° and 6° Offcut

Comparative Studies of the Growth and Characterization of Germanium Epitaxial Film on Silicon (001) with 0° and 6° Offcut

... attempt to resolve challenge (i), germanium (Ge), which has a lattice constant perfectly matched to GaAs ...K) and superior electron and hole mobility compared with Si, can be grown on ... Voir le document complet

8

Growth of InAs and Bi1-xSBx nanowires on silicon for nanoelectronics and topological qubits by molecular beam epitaxy

Growth of InAs and Bi1-xSBx nanowires on silicon for nanoelectronics and topological qubits by molecular beam epitaxy

... scientists from the Bell laboratory: John Bardeen, William Shockley and Walter Brat- tain unveiled the first point contact Germanium ...collector and an emitter, known as the BJT (figure ... Voir le document complet

174

Probing superlattices of silicon/silicon-germanium alloy with raman spectroscopy

Probing superlattices of silicon/silicon-germanium alloy with raman spectroscopy

... r and at t he m in izo n e b o u n d ary g iven by q jvt z= 7r^ ' w h ere d = d , + d 2 is t h e su p erlat t ice p erio d icit ...t and V$ l is t h e su p erlat t ice so und velo cit ...- and m+ co ... Voir le document complet

6

Effect of Germanium content and strain on the formation of extended defects in ion implanted Silicon/Germanium

Effect of Germanium content and strain on the formation of extended defects in ion implanted Silicon/Germanium

... , and Matlab [12] scripts. 3. Results and discussion ...all structures in order to verify the layers thicknesses, the presence of defects due to partial relaxation, the strain value in ... Voir le document complet

5

Structural and optical properties of axial silicon-germanium nanowire heterojunctions

Structural and optical properties of axial silicon-germanium nanowire heterojunctions

... VLS growth. Spontaneous intermixing at the Si/Ge heterointerface and lateral expansion of the Ge segment of the nanowire partially relieves the lattice mis- match induced ...defects and imperfections ... Voir le document complet

10

Grazing Incidence X-ray Diffraction investigation of strains in silicon nanowires obtained by gold catalytic growth

Grazing Incidence X-ray Diffraction investigation of strains in silicon nanowires obtained by gold catalytic growth

... silicon nanowire surface is a complicated ...starts from the head of the wire and diffuses to the bottom on the external ...in growth temperature due to the increase in gold ... Voir le document complet

29

Low-dimensional silicon-germanium heterostructures for quantum spintronics

Low-dimensional silicon-germanium heterostructures for quantum spintronics

... 2), and φ i is the phase of A i ...going from a to b through path 1 or through path ...a and b coincide), two time-reversed paths can have exactly the same ...(red and blue ...back ... Voir le document complet

117

Cellular structures from additive processes: design, homogenization and experimental validation

Cellular structures from additive processes: design, homogenization and experimental validation

... unit and extend it to the whole component (Deshpande et ...behavior to describe the mechanical response of the whole lattice (Catapano and Montemurro, 2014; Montemurro et ...(Catapano ... Voir le document complet

9

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