[PDF] Top 20 Second order anisotropy contribution in perpendicular magnetic tunnel junctions

... of magnetic anisotropy in FM layers and multilayers is very important towards the pMTJ stack optimization for future use in STT-MRAM ...of magnetic anisotropy constants at sheet ... Voir le document complet

... The magnetic properties of the perpendicular storage electrode (buffer/MgO/FeCoB/Cap) were studied as a function of annealing temperature by replacing Ta with W and W/Ta cap layers with variable ...W ... Voir le document complet

... voltage of -1 V, -1.5 V and -2 V is shown. It is observed that for a higher voltage bias, the dispersion in the data points is reduced. It is also obvious that the reversal starts sooner, as the thermal ... Voir le document complet

... applications in the fields of magnetic recording, magnetic field sensors, nonvolatile memories [magnetic random access memories (MRAM) and especially spin-transfer-torque MRAM ...(STT-MRAM)]. ... Voir le document complet

... amplitude in in-plane magnetized magnetic tunnel junctions (MTJ) with a crystalline MgO barrier has been a major breakthrough 1,2 ...with Perpendicular Magnetic ... Voir le document complet

... Fully perpendicular magnetic tunnel junctions (pMTJ) constitute the storage element of spin-transfer torque magne- toresistive random access memory (STT-MRAM) [ 1 – 6 ...MTJs. In- deed, ... Voir le document complet

... ceive magnetic random access memories (MRAMs) where magnetic tunnel junctions (MTJ) serve as prominent devices [ 1 – 5 ...]. In particular, out-of-plane magnetized magnetic ... Voir le document complet

... had in Portuguese at the ...helping in the macrospin simulations, respectively, for in-plane and out-of-plane double ...moments in that office, specially after working hours when noise was not ... Voir le document complet

... three-terminal magnetic tunnel junctions (MTJs) designed for field-free switching by spin-orbit torques (SOTs) to systematically study the impact of dual voltage pulses on the switching ...the ... Voir le document complet

... transport in CoFe =MgO-based MTJs had been provided up to ...filled in FeCo ...F in the PES spectra, in accordance with our ...component perpendicular to the surface, so along ... Voir le document complet

... interface anisotropy at V/Fe interface do not depend on volt- ...evidenced. In summary, epitaxial Fe(0.7 nm)/MgO/Fe(001) mag- netic tunnel junctions were prepared such that the thin Fe ... Voir le document complet

... through magnetic impurities. 31 , 33 In particular, the con- ductance with spin-exchange scattering is taken from the Appelbaum 34 , 35 and Anderson 36 models, a perturbation theory of the conductance ... Voir le document complet

... MgO-based perpendicular magnetic tunnel junctions show a strong dependence of the stability voltage-field diagrams as a function of the direction of the magnetic field with respect to ... Voir le document complet

... given in nm), where CoFeB stands for a Co-rich alloy (Co 60 Fe 20 B 20 ) while FeCoB for a Fe-rich one (Fe 72 Co 8 B 20 ...50/Ta3/CuN60, in order to allow transport ...structure in contact ... Voir le document complet

... In order to do so, a single energy barrier !E(H) rep- resenting the thermal stability of a tunnel junction is considered between the two stable states [ 19 ...fluctuation contribution based on ... Voir le document complet

... a second order magnetic anisotropy on magnetization reversal by spin transfer torque in perpendicularly magnetized magnetic tunnel junctions ...and second ... Voir le document complet

... the anisotropy and transport properties of perpendicular magnetic tunnel junctions focusing in particular on the materials ...the perpendicular anisotropy of the ... Voir le document complet

... Romanens: Magnetic relaxation of exchange biased (Pt/Co) multilayers and Co/NiO [18,19] showed that the magnetisation rever- sal involves nucleation and propagation in both ...direction. In this ... Voir le document complet

... of magnetic domain wall (DW) motion under the action of an electrical current is of great interest for the development of new data storage electronic devices such as magnetic racetrack memories 1 or logic ... Voir le document complet

... parabolic contribution may be ascribed to Joule heating. We checked in a separate experiment that the peak fre- quency shifts to lower values when temperature ...j in order to reproduce the ... Voir le document complet