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[PDF] Top 20 Rare Earth doped Si based frequency conversion layer for Si Solar Cell

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Rare Earth doped Si based frequency conversion layer for Si Solar Cell

Rare Earth doped Si based frequency conversion layer for Si Solar Cell

... first solar cells, as most of the solar cells on the market nowadays, are made of on silicon P-N ...silicon solar cell demonstration in 1954 [8], have been conducted to improve the efficiency ... Voir le document complet

187

Study of Tb3+-Yb3+ doped Silicon Nitride frequency conversion layers for Solar Cell Applications

Study of Tb3+-Yb3+ doped Silicon Nitride frequency conversion layers for Solar Cell Applications

...  Evidence of the efficiency of the energy transfer from the matrix to Tb and from Tb to Yb  Maximum internal quantum yield of 200%  Process totally compatible with the industrial solar cells Yb 3+ addition ... Voir le document complet

2

Monolithic crystalline silicon solar cells with SiN layers doped with Tb3+ and Yb3+ rare-earth ions

Monolithic crystalline silicon solar cells with SiN layers doped with Tb3+ and Yb3+ rare-earth ions

... increase conversion ef ficiency of a single junction solar cell, such as c-Si solar cells, spectrum conversion is a good method to modify solar spectrum by means of ... Voir le document complet

6

GaAsPN-based PIN solar cells MBE-grown on GaP substrates: toward the III-V/Si tandem solar cell

GaAsPN-based PIN solar cells MBE-grown on GaP substrates: toward the III-V/Si tandem solar cell

... GaAsPN absorber, itself grown on a n-doped (Si doped, 1.10 18 cm -3 ) GaP bottom layer. The ohmic contacts on the front and back surfaces have been described previously. The front contact ... Voir le document complet

11

SiNx:Tb3+–Yb3+, an efficient down-conversion layer compatible with a silicon solar cell process

SiNx:Tb3+–Yb3+, an efficient down-conversion layer compatible with a silicon solar cell process

... Silicon solar cells (SC) present an intrinsic efficiency limit calculated by Shockley and Queisser [1,2] of 29%, which is approached in the laboratory ...is frequency conversion ...silicon ... Voir le document complet

19

Monolithic crystalline silicon solar cells with SiN layers doped with Tb3+ and Yb3+ rare-earth ions

Monolithic crystalline silicon solar cells with SiN layers doped with Tb3+ and Yb3+ rare-earth ions

... ions) doped materials can absorb and emit light via the energy levels of the active ...Those rare- earth ions may be praseodymium (Pr 3 þ ), erbium (Er 3 þ ), europium (Eu 3þ ), samarium (Sm 3þ ), ... Voir le document complet

6

UV to NIR photon conversion in Nd-doped rutile and anatase titanium dioxide films for silicon solar cell application

UV to NIR photon conversion in Nd-doped rutile and anatase titanium dioxide films for silicon solar cell application

... NIR conversion is achieved in both anatase and rutile phase and that high crystalline quality rutile film is the most efficient matrix to host Nd 3+ ions leading to the most efficient PL ...upper layer on ... Voir le document complet

8

Quantum Cutting Processes in Rare-earth doped fluorides for Photovoltaic applications

Quantum Cutting Processes in Rare-earth doped fluorides for Photovoltaic applications

... wells solar cells (QWSCs) constitute an advanced approach to multi- bandgap solar cells derived from the recent development of semiconductor nanostructures ...is based on a single p-i-n structure ... Voir le document complet

207

Phosphorus emitter engineering by plasma-immersion ion implantation for c-Si solar cells

Phosphorus emitter engineering by plasma-immersion ion implantation for c-Si solar cells

... silicon-based solar cell manufacturing using a plasma-immersion ion implantation ...files for phosphorus-doped emit- ters which fit the requirements for high-efficiency solar ... Voir le document complet

8

Frequency Conversion Layers for Si Solar Cell Efficiency Improvement

Frequency Conversion Layers for Si Solar Cell Efficiency Improvement

... different frequency conversion layers and the increased ef ficiency ...3+ doped SiN x layers deposited by reactive magnetron co-sputtering have been studied in order to obtain a thin DS or DC ... Voir le document complet

8

Down-shifting Si-based layer for Si solar applications

Down-shifting Si-based layer for Si solar applications

... down-shifting layer that emits a maximum at 629 nm, 594 nm, 550 nm, and 493 nm (terbium peaks) and is also an anti-reflective ...requirements for obtaining such a ...optimized layer has been ... Voir le document complet

14

Integration of rare earth ions doped Si based down converter layers in an industrial Si solar cell

Integration of rare earth ions doped Si based down converter layers in an industrial Si solar cell

... in Si solar cell -> Homogenous DC layer lead to relative Si solar cell efficiency increase of ...sputtering Si based doped with rare ... Voir le document complet

2

Si près, si loin du politique

Si près, si loin du politique

... (38% ont été recrutés après 1997). Sur la petite centaine de permanents qui subsiste en 1993 après les départs et reclassements, seuls 36 emplois relèvent de la première filière AE (7 directeurs de départements, 29 ... Voir le document complet

20

Stealth Biocompatible Si-Based Nanoparticles for Biomedical Applications

Stealth Biocompatible Si-Based Nanoparticles for Biomedical Applications

... the Si concentration following injection of pristine pSiNPs, pSiNPs–PEG, pSiNPs–Man, and pSiNPs–PEG–Man in mice blood and urine 5 h after ...injection. For the pSiNPs, pSiNPs–PEG, and pSiNPs–Man, ... Voir le document complet

16

Une constitution européenne, si et seulement si...

Une constitution européenne, si et seulement si...

... solennel. Si ce texte pose les fondements de l’organisation des pouvoirs publics et fixe les principes de vie en commun, n’est-ce pas une constitution ? Si son adoption permet de rassurer les citoyens, ... Voir le document complet

14

Si MOS technology for spin-based quantum computing

Si MOS technology for spin-based quantum computing

... inter-Gate separation and protecting it from self-aligned doping. Gate 1 defines the target qubit, Gate 2 is used to localize a particle with a spin initialized to a reference state, acting as a filter. Following Pauli’s ... Voir le document complet

7

Annealing-free Si3N4 frequency combs for monolithic integration with Si photonics

Annealing-free Si3N4 frequency combs for monolithic integration with Si photonics

... atmosphere for 2 ...room for improvement to well below <1 nm RMS via sophisticated pattering strategies which are currently under ...the Si 3 N 4 film using our deposition ... Voir le document complet

7

Optical Properties of Nd-Doped Si-based thin films : towards an optical amplifier

Optical Properties of Nd-Doped Si-based thin films : towards an optical amplifier

... form rare earth clusters and/or to lower the density of efficient sensitizers [10] ...favorable for the formation of Nd-based ...of Si excess, to achieve a high PL intensity even after ... Voir le document complet

153

High-performance waveguide photodetectors based on lateral Si/Ge/Si heterojunction

High-performance waveguide photodetectors based on lateral Si/Ge/Si heterojunction

... optimized for a transverse electrical (TE) polarization and operation at the C-band close to a ...n-type Si slabs, situated within a cavity at the end of Si ...Inc. for a 1-µm-wide and ... Voir le document complet

11

Direct-gap photoluminescence from a Si-Ge multilayer super unit cell grown on Si₀.₄ Ge₀.₆

Direct-gap photoluminescence from a Si-Ge multilayer super unit cell grown on Si₀.₄ Ge₀.₆

... nm for the SPE sample at 6 ...intensities for each sample vary slightly depending on the exci- tation conditions (see, for example, the results obtained for the SPE sample shown in ...below ... Voir le document complet

6

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