Haut PDF Magnetization reversal driven by spin-transfer-torque in perpendicular shape anisotropy magnetic tunnel junctions
Magnetization reversal driven by spin-transfer-torque in perpendicular shape anisotropy magnetic tunnel junctions
... Micromagnetism, Perpendicular Shape Anisotropy, Spin-Transfer-Torque, Transverse domain wall ...The spin-transfer-torque magnetic random-access memory ...
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Spin transfer torque magnetic random-access memory: Towards sub-10 nm devices
... ___________________________________________________________________________ Magnetic Random-Access Memory (MRAM) is a non-volatile class of solid-state storage device where the information is stored in the ...
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Respective influence of in-plane and out-of-plane spin-transfer torques in magnetization switching of perpendicular magnetic tunnel junctions
... of in-plane (damping-like) and out-of-plane (field-like) spin-transfer torques (STT) in the magnetization switching of out-of-plane magnetized magnetic tunnel ...
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Spin transfer torque magnetization reversal in a hard/soft composite structures
... (CC BY) license ( ...to spin transfer torque (STT), a polarized current can induce magnetization switching or ...instance perpendicular magnetic anisotropy (PMA) ...
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A highly thermally stable sub-20 nm magnetic random-access memory based on perpendicular shape anisotropy
... A magnetic random-access memory (MRAM) is a non-volatile memory wherein one bit of information is stored by the magnetic state of a ferromagnetic (FM) ...magnetized tunnel junctions ...
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Influence of spin-transfer torque on thermally activated ferromagnetic resonance excitations in magnetic tunnel junctions
... B. Magnetic fluctuations in the presence of spin torque Now we consider a multilayer structure with two ferro- magnetic layers separated by a ...a spin valve or a ...
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Route towards efficient magnetization reversal driven by voltage control of magnetic anisotropy
... interface, in the case of purely electronic effects [11] and/or ii) oxygen migration in the case of ionic mechanisms [12], ...the magnetization is the Rashba spin- orbit mechanism, where the ...
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Domain wall motion in nanopillar spin-valves with perpendicular anisotropy driven by spin-transfer torques
... the magnetization after application of a 1 mA current shows that in about 120 ns the system reaches a new equilibrium state that, in contrast to the previous case, is a DW at the same position, but ...
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Perpendicular magnetic tunnel junctions with a synthetic storage or reference layer: A new route towards Pt- and Pd-free junctions
... amplitude in in-plane magnetized magnetic tunnel junctions (MTJ) with a crystalline MgO barrier has been a major breakthrough 1,2 ...with Perpendicular Magnetic ...
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Enhanced annealing stability and perpendicular magnetic anisotropy in perpendicular magnetic tunnel junctions using W layer
... ] Spin transfer torque magnetic random access memories (STT-MRAM) are the focus of intense research and develop- ment efforts due to their non-volatility, low-energy con- sumption, high-speed ...
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Increased energy efficiency spin-torque switching of magnetic tunnel junction devices with a higher order perpendicular magnetic anisotropy
... order magnetic anisotropy on magnetization reversal by spin transfer torque in perpendicularly magnetized magnetic tunnel junctions ...
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Asymmetric Magnetization Switching in Perpendicular Magnetic Tunnel Junctions: Role of the Synthetic Antiferromagnet’s Fringe Field
... of magnetization has been a subject of great interest since the prediction of spin transfer torque (STT) by Berger [ 1 ] and Slonczewski [ 2 ] in ...innovative magnetic ...
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Heating asymmetry induced by tunneling current flow in magnetic tunnel junctions
... do tunnel through the ...results in a higher temperature rise in the receiving ...achieved in the FeMn antiferromagnet with a power density that can be reduced by 10% by applying ...
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Field-free magnetization reversal by spin-Hall effect and exchange bias
... cedex,France Magnetic random-access memory (MRAM) driven by spin-transfer torque (STT) 1,2 is a major contender for future memory applications 3,4,5 ...involved in writing ...
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Description of current-driven torques in magnetic tunnel junctions
... that spin torque should present an important bias asymmetry and the dissipative part of IEC (also called current-induced effective field) should be of the same order of magnitude than STT with a quadratic ...
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State diagram of nanopillar spin valves with perpendicular magnetic anisotropy
... the magnetization preces- sions predicted by the ...recorded in spin valves with at least one magnetization in-plane because they generate an alternative voltage due to the ...
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Spin-dependent transport in antiferromagnetic tunnel junctions
... explores spin dependent transport devices using AFs instead of ferromagnets ...topic in spintronics 3 – 6 since AFs exhibit no stray fields, which is beneficial for ultimate down- size ...scalability. ...
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Field-current phase diagrams of in-plane spin transfer torque memory cells with low effective magnetization storage layers
... on in-plane anisotropy Co 60 Fe 20 B 20 magnetic tunnel junctions to obtain the spin transfer torque (STT) field-current switching ...characterise junctions ...
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SPICE modelling of magnetic tunnel junctions written by spin-transfer torque
... implemented in C-language, compiled with the compiled-model interface (CMI) provided by Cadence Design ...shown in figure ...modeled by its tunneling conductance and ...of magnetization ...
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Second order anisotropy contribution in perpendicular magnetic tunnel junctions
... cone anisotropy can be used to significantly improve the writing per- formances of pMTJ-based STT-MRAM elements 29,30 .... In a standard pMTJ system, the magnetic moments of both free and reference ...
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