[PDF] Top 20 InAs/InP quantum dot VECSEL emitting at 1.5 μm
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InAs/InP quantum dot VECSEL emitting at 1.5 μm
... high-power InAs quantum dot (QDs) vertical-external-cavity surface-emitting laser emitting at ...Krastanow InAs quantum dots on InP ... Voir le document complet
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Dynamic properties of InAs/InP(311B) quantum dot Fabry-Perot lasers emitting at 1.52-μm
... In this paper, we report on the microwave frequency properties – relaxation frequency and Henry factor- of narrow ridge single mode waveguide Fabry-Perot (FP) lasers processed from a 5 InAs/InP ... Voir le document complet
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Modulation dynamics of InP-based quantum dot lasers and quantum cascade lasers
... the InAs/InP Qdot material system, the GS laser has natural potential to emit at ...emission InAs/GaAs Qdot laser with a large-signal modulation capability up to ... Voir le document complet
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Polarization Insensibility of Columnar Quantum Dot Structure Emitting at λ = 1.55 μm: A Theoretical Study
... stacked quantum dots (QD) with a very small or zero spacing (columnar QD, CQD) have been investigated in order to obtain polarization insensitive semiconductor amplifiers (SOA) ...the InAs/GaAs system. A ... Voir le document complet
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Carrier dynamics and saturation effect in (113)B InAs/InP quantum dot lasers
... paper, InAs QDs grown on InP(113B) substrate are ...(100) InP substrates (Caroff et ...observed at room temperature under optical pumping (Paranthoen et ...the InP first cap layer by ... Voir le document complet
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High-Power 760 nm VECSEL Based on Quantum Dot Gain Mirror
... alternative, VECSEL utilizing Raman shifting in diamond allowed to obtain 82 mW at 736-750 nm ...yielding 1 W at 780 nm [9] and 1.5 W at 750 nm ...record VECSEL results at ... Voir le document complet
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Efficiency limiting processes in 1.55 μm InAs/InP-based quantum dots lasers
... Figure 1 共inset兲 shows that spontaneous emission spectra yielded multiple ...emission at threshold, suggesting that the carrier density in the WL/BL is low around RT and that this current path makes only a ... Voir le document complet
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Influence of the polarization anisotropy on the linewidth enhancement factor and reflection sensitivity of 1.55- μm InP-based InAs quantum dash lasers
... the InP substrate at the ...symmetric at the top and the bottom of the QDash active region. At the top of the structure, after another 100 nm InGaAlAs digital alloy grading layer, the ... Voir le document complet
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Sb surfactant mediated growth of InAs/AlAs0.56Sb0.44 strained quantum well for intersubband absorption at 1.55 μm
... GaN/AlGaN, 5 (CdS/ZnSe)/BeTe, 6 and InGaAs/AlAsSb 7 meets this ...to InP, making it fully compatible with the standard telecom device technology, and thus very prom- ising for ultrafast telecom ... Voir le document complet
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Electronic structure and carrier dynamics in InAs/InP double-cap quantum dots
... such InAs/InP QDs are still ...self-organized InAs QDs on misoriented InP(113)B substrates has been proposed to get QDs with both quantum sizes and a high surface density ...double-cap ... Voir le document complet
17
Room-temperature InAs/InP Quantum Dots laser operation based on heterogeneous “2.5 D” Photonic Crystal
... operate at high temperature (due to CMOS circuit heating) and at high modulation ...classical quantum well based lasers, their quantum dot (QD) counterpart potentially offers high ... Voir le document complet
9
Vacancy-mediated intermixing in InAs/InP(001) quantum dots subjected to ion implantation
... 4, 5, and 6 ML in thickness increase by up to two orders of magnitude after ...annealing at 600 ° ...ously emitting of this region of the spectrum have now heavily intermixed and contribute to the ... Voir le document complet
11
MBE growth optimization and optical spectroscopy of InAs/GaAs quantum dots emitting at 1.3μm in single and stacked layers
... to InP, it remains very important to control the growth of QDs on GaAs emitting at ...QDs emitting in the desired spectral range has no meaning for laser applications if the structures do not ... Voir le document complet
8
Asymmetric Stark Shift in InAs/GaAsP(Q1.18) quantum dots grown on (311)B InP substrate
... We present photocurrent spectra at 300 K and 77 K for applied bias V d = 0 (Fig. 2(left)). From these measurements we deduce the fundamental transition energies of the dots E 0 (300K) = 0.783 eV ( λ = 1.583 µm) ... Voir le document complet
3
Class-A Operation of InAs Quantum Dash-based Vertical-External-Cavity Surface-Emitting Laser
... T = 19.5°C ω MM-pump = 145 µm x 210 µm ω SM-pump = 80 µm x 120 µm Laser linewidth and phase noise References S. Pes et al., "Class-A Operation of an Optically-Pumped 1.6 µm-emitting Quantum Dash-based ... Voir le document complet
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Self-assembled InAs quantum dots grown on InP (3 1 1)B substrates: Role of buffer layer and amount of InAs deposited
... (311)B InP substrates. After oxide adsorption at 530 °C under phosphorus flux, a ...thick InP buffer layer, followed by a ...to InP were ...set at 500°C and the Beam Equivalent Pressure ... Voir le document complet
9
High-performance 1.52 μm InAs/InP quantum dot distributed feedback laser
... and quantum well (QW) semiconduc- tor lasers [1] ...mm InAs/GaAs QD distributed feedback (DFB) lasers with laterally loss- or index- coupled gratings have been demonstrated [3] ...of InAs/ ... Voir le document complet
3
Spectral Analysis of 1.55-μm InAs/InP(113)B Quantum-Dot Lasers Based on a Multipopulation Rate Equations Model
... ious dot population, each characterized by a GS and an ES av- erage energy level have to be considered as in ...is at first calculated both for the GS and the ...two InAs QD ...the ... Voir le document complet
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Polarization properties of InAs/InGaAsP/InP quantum dot stacks
... of quantum wells (QW) operating in the ...[ 1 , 2 ]. Recently, InAs/InP quantum dot (QD) lasers operating in the telecommunications wavelength range showed promising properties ... Voir le document complet
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Narrow spectral linewidth in InAs/InP quantum dot distributed feedback lasers
... Figure 5 unveils that the minimum linewidth of the QD laser is rather insensitive to temperature with only an increase of 5% at 303 K above the minimum value of 170 kHz at 283 ...MHz at ... Voir le document complet
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