Top PDF GaN/AlN nanowires : nucleation, polarity and quantum heterostructures
GaN/AlN nanowires : nucleation, polarity and quantum heterostructures
... m and −c facets, whereas the (1¯10n) facets were observed to be more stable, for certain growth conditions, than the m and c facets [ 74 , 75 , 73 ...Ga- and N-polar ...Ga- and N-polar ...m ...
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Visualising highly localised luminescence in GaN/AlN heterostructures in nanowires
... 2(b,c and f)), and to the quantum confinement in two ...2(f)) and, even by a carefully tilting the sample, the morphology of some features remain ...(b) and (c) were ...
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Assessment of AlGaN/AlN superlattices on GaN nanowires as active region of electron-pumped ultraviolet sources
... step AlN nucleation layer, as described elsewhere ...nm) GaN nanowire base grown under N-rich conditions (Ga/N flux ratio F Ga /F N = ...°C, and with a growth rate of v G = 330 nm/h. This ...
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Polarity conversion of GaN nanowires grown by plasma-assisted molecular beam epitaxy
... external quantum efficiency (EQE) of these LEDs is remarkably high for blue emission, over 80%, when grown on sapphire [1] as well as on Si substrates [2, ...QW and the GaN barrier, alloy composition ...
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Modélisation des propriétés structurales, électroniques et optiques des nanofils de nitrures GaN/AlN
... structural and electronic properties of nitride GaN/AlN nanowire heterostructures with atomistic simulation ...sitions and strain distribution in these ...various GaN/AlN ...
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Design of AlGaN/AlN Dot‐in‐a‐Wire Heterostructures for Electron‐Pumped UV Emitters
... AlGaN/AlN quantum dot superlattices on GaN nanowires for application in electron-pumped UV ...ratio and the Al content in the ...
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Superlattice GaN-on-silicon heterostructures with low trapping in 1200 V
... Results and discussion Vertical breakdown voltages measurements have been performed on both devices. A vertical breakdown of a 1300 V at 1 A is reached for the structure with SL as compared to a 1000 V for the ...
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GaN/AlGaN heterostructures for infrared optoelectronics : polar vs nonpolar orientations
... Context and motivation III-nitride semiconductors are key materials for the development of optoelectronic and electronic ...bandgap and doping capabilities, they are the basic material which allowed ...
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Etude par spectroscopie X en condition de diffraction de la croissance et de l'encapsulation de boites quantiques GaN/AlN
... of GaN quantum dots, which remarkable optoelectronic properties in the visible to ultraviolet range makes them potential building blocks of new optoelectronic ...state and composition, which must ...
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Etude ab initio des propriétés optiques linéaires des semi-conducteurs GaN, AlN et InN
... III-N AlN, GaN, InN qui acquièrent une importance particulière aussi bien que ses alliages GaN/AlN et InN/GaN comme ...dans AlN (Eg= ...dans GaN (Eg= ...
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Piezo-generator integrating a vertical array of GaN nanowires
... fabrication and characterization, which allows to establish for GaN NWs the relationship between the material properties and the piezo-generation and to propose an efficient piezo-generator ...
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Non-Equilibrium SiGeSn Group IV Heterostructures and Nanowires for Integrated Mid-Infrared Photonics
... [32] and PbTe [33] ), group II-VI alloy (mercury cadmium telluride HgCdTe [34] ), and group III-V compounds (InGaAs, InAsSb, InSb, and ...cost and small array size of these detectors ...
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Hole quantum spintronics in strained germanium heterostructures
... (red) and carrier density n hol e (blue) as a function of accumulation gate voltage When comparing to similar heterostructures [3], our values obtained for mobility are quite ...[4] and obtained a ...
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Nucleation, imaging and motion of magnetic domain walls in cylindrical nanowires
... or structural / anisotropy fluctuations 20 also induce a lo- cal contrast, with monopolar and dipolar feature along the wire direction, respectively. However, a closer look reveals also a transverse dark/light ...
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Alignment control and atomically-scaled heteroepitaxial interface study of GaN nanowires
... ous and occasionally destroys the GaN ...well-aligned GaN nanowires or nanorods with decent crystal quality and chemical purity on a variety of substrates through slow and ...
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Optical properties of ultrathin InAs quantum-well-heterostructures
... valence and conduction band states for TE polarisation of the structures previously studied in ...e1-lh1 and parity-forbidden e1-hh2 transitions are very sensitive to the structure of the ...) and ...
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30-band k.p method for quantum semiconductor heterostructures
... interaction and obtained a correct description of the valleys of the lowest lying conduction band and valence bands in bulk Si and ...dona and Pollak’s work with the inclusion of the ...
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InGaN/GaN Multiple Quantum Wells for Photovoltaics
... III-nitrides and sapphire remains the most commonly ...InN and sapphire and 14% between GaN and sapphire) creates a lot of defects at the InN, GaN/sapphire interface damaging the ...
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AlGaN/GaN High Electron Mobility Transistors with Ultra -Wide Bandgap AlN buffer
... voltage and the low leakage current show that the heterostructure does not suffer from any parasitic conduction as full depletion down to the sapphire substrate ...
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Nanowire growth and sublimation: CdTe quantum dots in ZnTe nanowires
... NW) and the distance between opposite ...d(2) and d(2) to d(3), but not identically, so that the shape of the hexagons is changed ( ±10% with respect to the regular ...radial and axial growth ...
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