[PDF] Top 20 GaAsPN-based PIN solar cells MBE-grown on GaP substrates: toward the III-V/Si tandem solar cell
Has 10000 "GaAsPN-based PIN solar cells MBE-grown on GaP substrates: toward the III-V/Si tandem solar cell" found on our website. Below are the top 20 most common "GaAsPN-based PIN solar cells MBE-grown on GaP substrates: toward the III-V/Si tandem solar cell".
GaAsPN-based PIN solar cells MBE-grown on GaP substrates: toward the III-V/Si tandem solar cell
... ABSTRACT GaAsPN semiconductors are promising material for the elaboration of high efficiencies tandem solar cells on silicon ...substrates. GaAsPN diluted nitride alloy is ... Voir le document complet
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Growth, structural and electro-optical properties of GaP/Si and GaAsPN/ GaP single junctions for lattice-matched tandem solar cells on silicon
... GaAsP/SiGe tandem solar cells on Si substrate (c) Another very interesting approach has been proposed by ...integrated solar panel on Si that allows scaling of cell output ... Voir le document complet
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Optical absorption and thermal conductivity of GaAsPN absorbers grown on GaP in view of their use in multijunction solar cells
... GaAsP/SiGe tandem photovoltaic solar cells would reach high conversion efficiency on the low cost Si substrate ...[1-3]. GaAsPN alloys which are grown either by molecular ... Voir le document complet
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Structural and optical properties of (In,Ga)As/GaP quantum dots and (GaAsPN/GaPN) diluted-nitride nanolayers coherently grown onto GaP and Si substrates for photonics and photovoltaics applications
... 6. GAASPN MATERIAL FOR MULTIJUNCTION SOLAR CELLS To date, monocristalline multi-junction solar cell devices reach the highest efficiencies ...Recently, the use of ... Voir le document complet
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Monolithic Integration of Diluted-Nitride III–V-N Compounds on Silicon Substrates: Toward the III–V/Si Concentrated Photovoltaics
... diluted-nitride III –V-N compounds on silicon substrates The aim of our work is to provide low-cost and high- efficiency tandem cells grown on c-Si ... Voir le document complet
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Structural and optical analyses of GaP/Si and (GaAsPN/GaPN)/GaP/Si nanolayers for integrated photonics on silicon
... In the context of the monolithic integration of photonics on silicon, quasi-lattice-matched GaP (III-V semiconductor) epitaxially grown on Si has been proposed to overcome ... Voir le document complet
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Frequency Conversion Layers for Si Solar Cell Efficiency Improvement
... Keywords Si solar cell ⋅ Frequency conversion ⋅ Down conversion ⋅ Down shifting ⋅ Silicon nitride ⋅ Alumina Managing the energy harvesting is one of the key issues for this ... Voir le document complet
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Direct-gap photoluminescence from a Si-Ge multilayer super unit cell grown on Si₀.₄ Ge₀.₆
... within the layer in the sample compared with the ideal modeled structure or arise from assumptions made for parameter values in the ...characterization. The direct absorption method is ... Voir le document complet
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Computational design of high performance hybrid perovskite on silicon tandem solar cells
... defines the composition) as top sub-cell absorber ...in the halide composition of lead methylammonium perovskites allows for continuous fine-tuning the band gap ...bottom cells. ... Voir le document complet
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X-ray Coherent Scattering on GaP/Si for III-V Monolithic Integration on Silicon
... Y. Ping Wang 1 , A. Létoublon 1 , I. Lucci 1 , C. Cornet 1 , V. Favre-Nicolin 2 , G. Chahine 2 , J. Eymery 3 , L. Pedesseau 1 , M. Bahri 4 , L. Largeau 4 , G. Patriarche 4 , A. Ponchet 5 , M. Vallet 5 , J. ... Voir le document complet
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Plasma-enhanced chemical vapor deposition epitaxy of Si on GaAs for tunnel junction applications in tandem solar cells
... PECVD Si on MOVPE GaAs device aiming at obtaining a hybrid ...was grown successfully by PECVD at 175°C on a p-doped GaAs layer. The electrical results of the fabricated device unexpectedly ... Voir le document complet
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Self‐powered light‐induced plating for III‐V/Ge triple‐junction solar cell metallization
... Ge/Pd, Si/Pd, Al/Ni/Ge, Au/Pd/Ge 17,18 with low specific con- tact resistance (in the order of 10 −6 ...improve the contact resistivity. Despite a high contact resistance, the seedless SP-LIP ... Voir le document complet
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Commercialization potential of compositionally graded Ge - Si₁₋x̳Gex̳ - Si substrates for solar applications
... Such partnerships are critical to the market penetration of graded substrate technology and bring to these business partners the novelty of having larger substrate ar[r] ... Voir le document complet
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Down-shifting Si-based layer for Si solar applications
... of Si solar cells and act simultaneously as a down-shifting layer and antire flective ...Introduction Solar energy is one of the sustainable energies considered for the ... Voir le document complet
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23.6%-efficient monolithic perovskite/silicon tandem solar cells with improved stability
... respectively. The perovskite/silicon tandems all had an aperture area of 1 cm 2 . The external quantum efficiency (EQE) was recorded as a function of the wavelength using a Keithley model ...as ... Voir le document complet
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Integration of rare earth ions doped Si based down converter layers in an industrial Si solar cell
... silicon solar cell process, , Solar Energy Materials and Solar Cells 145, 84-92, 2016 ...for Si Solar Cell Efficiency Improvement in Frontiers in Electronic ... Voir le document complet
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Si nanostructures thin films for 3rd generation of solar cells
... thank the Lord Almighty for His immense ...outside the lab, for the valuable discussions, guidance and the time spent in nurturing me from a PhD student to a young ...for the care he ... Voir le document complet
212
Strain reduction in selectively grown CdTe by MBE on nanopatterned silicon on insulator (SOI) substrates
... Silicon based substrates for the epitaxy of HgCdTe are an attractive low cost choice for monolithic integration of infrared detectors with mature Si technology and high ...by the high ... Voir le document complet
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Understanding and monitoring the capacitance‐voltage technique for the characterization of tandem solar cells
... to the EQE, 15 they are predominantly absorbed by one of the ...subcells. The 405 nm wavelength is absorbed by the AlGaAs top cell such that the capacitance of the ... Voir le document complet
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Prediction of J-V Characteristic of Organic Solar Cells Using ANFIS Model
... ON THE ORGANIC SOLAR CELLS Organic solar cells can be classified by different ...criterions. The type of BHJ is the one of these criterions. The BHJ is formed by a ... Voir le document complet
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