[PDF] Top 20 Electrical characterization of InGaN/GaN multiple-quantum-well structures by thermal admittance spectroscopy
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Electrical characterization of InGaN/GaN multiple-quantum-well structures by thermal admittance spectroscopy
... results of electrical characterization of InGaN/GaN multiple-quantum-well electroluminescence test structures obtained by thermal ... Voir le document complet
4
Structural, morphological, optical and electrical characterization of InGaN/GaN MQW structures for optoelectronic applications
... InGaN/GaN multiple quantum well (MQW) structures were grown on c-plane sapphire substrate using metal organic chemical vapour deposition technique by varying the MQW ... Voir le document complet
8
Thermal admittance spectroscopy of Mg-doped GaN Schottky diodes
... 2001兲 Thermal admittance spectroscopy measurements at temperatures ranging from room temperature to 90 K are performed on Schottky structures based on Mg-doped GaN layers grown ... Voir le document complet
9
OLED ageing signature characterization under combined thermal and electrical stresses
... loading of the junction capacitance and an increase in junction current due to higher device ...case of the current going abruptly from the maximum to the minimum value, there was some freewheeling phase ... Voir le document complet
5
Design of quantum well infrared photodetectors
... The conversion efficiency can be obtained from a measurement of the net photocur- rent, equal to the measured photocurrent minus the cold shield current, as a function [r] ... Voir le document complet
283
Contributed Review: Experimental characterization of inverse piezoelectric strain in GaN HEMTs via micro-Raman spectroscopy
... Department of Mechanical Engineering, Massachusetts Institute of Technology, Cambridge, Massachusetts, 02139, USA Micro-Raman thermography is one of the most popular techniques for measuring local ... Voir le document complet
71
Role of Sb in the growth and optical properties of 1.55μmu m GaInN(Sb)As/GaNAs quantum-well structures by molecular-beam epitaxy
... typical of a type I ...quality of the QWs: the better the QW quality, the sharper the transition ...improved by the introduction of Sb, which suggest that as a surfactant, Sb atoms play a role ... Voir le document complet
4
InGaN Quantum Dots Studied by Correlative Microscopy Techniques for Enhanced Light-Emitting Diodes
... fabricated by FIB. Comparative optical characterization of the as-grown sample and the atom probe specimen shows that there was no loss or rearrangement of indium during the FIB ... Voir le document complet
36
Coefficient of thermal expansion of carbon nanotubes measured by Raman spectroscopy
... CTE of 2.1 10 5 K 1 for the outer wall of the DWCNTs and ...amount of theoret- ical and experimental work has been carried out to determine the CTE of nanotubes 1 – 6 , 30 but there is no ... Voir le document complet
6
Carrier dynamics near a crack in GaN microwires with AlGaN multiple quantum wells
... expense of a pulsed electron gun or ultrafast beam ...). By fitting the exponential decay of this function, we access the ef- fective lifetime τ ef f defined in ( 2 ... Voir le document complet
11
Green InGaN/GaN based LEDs: high luminance and blue shift
... 3.2 Quantum well excited-levels filling hypothesis We present on figure 7, normalized intensity electroluminescence spectra at four different voltage values, recorded on the 6µm ...the InGaN ... Voir le document complet
8
Dynamique de recombinaison radiative dans les nanofils InGaN/GaN : étude détaillée de la photoluminescence
... Deuxièmement, le désaccord de maille entre le GaN et l’InGaN est une autre source de stress. À partir d’images de diffraction de rayons X à haute résolution (HRXRD) et de HRTEM, Knelangen et coll. [25] ont réussi ... Voir le document complet
144
Comparing quantum-chemical calculation methods for structural investigation of zeolite crystal structures by solid-state NMR spectroscopy
... Combining quantum-chemical calculations and ultrahigh-field NMR measurements of 29 Si chemical shielding (CS) tensors has provided a powerful approach for probing the fine details of zeolite crystal ... Voir le document complet
10
InGaN/GaN µLED SPICE modelling with size-dependent ABC model integration
... need of high brightness micro-displays in portable applications dedicated to mixed and/or virtual reality has drawn an important research wave on InGaN/GaN based micro-sized light emitting diodes ... Voir le document complet
9
Role of Underlayer for Efficient Core–Shell InGaN QWs Grown on m-plane GaN Wire Sidewalls
... gas by adding a GaN spacer at 900 °C for 100 s around the GaN core before the similar growth of InGaN SQW and GaN barrier as already performed for the first sample followed ... Voir le document complet
37
GaN/AlGaN nanowires for quantum devices
... quantiques GaN/AlGaN non-polaires déposées sur le plan ...sur GaN à l’infrarouge lointain (FIR), nous avons conçu une série de puits quantiques GaN/AlGaN plan m dont on fait varier les dimensions et ... Voir le document complet
194
Optical properties of GaN quantum dots and nanowires
... ´ electromagn´ etiques jouent toutes les deux un rˆ ole important. Un comporte- ment original dans la luminescence du bord de bande est observ´ e comme cons´ equence de cette interaction. La pr´ esence de l’effet Stark ... Voir le document complet
209
Quantum thermal transistor
... velopment of two components: the diode [1] and the tran- sistor [2]. By analogy, one can, of course, envisage devel- oping similar thermal devices that could make the ther- mal control ...one ... Voir le document complet
6
Determination of charge carrier transport properties in organic devices by admittance spectroscopy : application to hole mobility in α-NPD
... ated by electrical characterization in the ac ...complex admittance and imped- ance of the structure consisting of the organic layer, grown by thermal evaporation, ... Voir le document complet
13
Croissance par épitaxie par jets moléculaires et détermination des propriétés structurales et optiques de nanofils InGaN/GaN
... de GaN, on n'observe aucune contribution dans la gamme 2,6-3,2 eV (390 - 480 nm) à 150 K, alors que l'émission inconnue atteint pourtant son amplitude maximale à cette température quand on excite l'échantillon à ... Voir le document complet
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