[PDF] Top 20 Contribution to the modeling of III-V materials-based multi-gate transistors
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Contribution to the modeling of III-V materials-based multi-gate transistors
... While III-V-based FETs show some very attractive and tangible merits, there exist many difficult challenges to overcome before they will become applicable for future high speed and low-power ... Voir le document complet
117
Contribution to study and modeling of the nanoscale multi-gate transistor using neural and evolutionary techniques
... type of devices in the following section. I.3.2.1 Advantages of multi-gate transistors The idea of adding more and more gates is based on the fact ... Voir le document complet
179
Multi-scale modeling of radiation heat transfer through nanoporous superinsulating materials
... this contribution, we focus on the extraordinarily high level of thermal insulation produced by nanoporous materials, which can achieve thermal conductivities down to a few when they ... Voir le document complet
40
Contribution to the modeling and improvement of the nanoscale multigate transistors: Application to the nanoscale circuits design
... simulation of the nanoscale (multigate) CMOS-based de- vices. The effects of device design parameters like silicon channel thickness, gate oxide thickness, and silicon channel ... Voir le document complet
184
Antimonide-based III-V multigate transistors
... However, the progress in the antimonide-based transistors, until recently, became ...demonstrations of InGaSb p-channel transistors have been demonstrated [35], [37], [41]–[48], ... Voir le document complet
171
Controlling morphology of multi-component block copolymer based materials
... for the cylindrical morphology in a narrow composition window with w large ≤ ...31 The self-consistent field theory (SCFT) study by Matsen 32 focused on selected values of χN and R, and demonstrated ... Voir le document complet
139
Modeling of Perovskite Solar Cells, III-V Optoelectronic Devices and Kelvin Probe Microscopy
... be the ultimate solution to surpass in great excess any human energy needs on the earth 2–4 today and even in the space 5 ...branch of the solar energy conversion technologies is ... Voir le document complet
133
Quantitative assessment of the interfacial roughness in multi-layered materials using image analysis: Application to oxidation in ceramic-based materials
... smoothing of the profile simulating the conical tip of the sty- ...by the higher spatial resolution reached on the SEM images ...instead of 1.2 m for the ... Voir le document complet
18
The Effects of Prosody on French V-to-V Coarticulation: A Corpus-Based Study
... where V-to-V coarticulation may result in an optional process of ...harmony. The goal was twofold: a) comparing degree of coarticulation ...resistance) of vowels located ... Voir le document complet
5
Pépite | Contribution à l'étude de l'épitaxie d'hétérostructures à base de semi-conducteurs III-V phosphorés
... semi-conducteurs III-V de qualité repose sur la connaissance des surfaces, l’optimisation de la formation des interfaces et la maîtrise de la relaxation des couches ...semi-conducteurs III-V ... Voir le document complet
73
Contribution à la modélisation et l’optimisation des transistors multi-grilles : Application à la conception des dispositifs nanoélectroniques
... Les résultats obtenus et qui sont illustrés dans la figure III.5a et la figure III.5b montrent clairement montré que les caractéristiques du sous-seuil de manière substantielle au fur et à mesure que les ... Voir le document complet
154
Contribution à l’étude des propriétés physiques et électriques des composés semi-conducteurs III-V.
... 6 I-3. Les composés binaires, ternaires et quaternaires des S/C III/V I-3-1. Les composés binaires Les composes binaires possibles n’ont pas tous le même intérêt potentiel. L'étude de leurs propriétés, et ... Voir le document complet
172
The development of III-V single-mode lasers based on semiconductor optical amplifier heterostructures
... Based on some basic properties of underactuated systems as actuation/passivity of shape variables, integrability/non-integrability of appropriate normalized momen- tums, a[r] ... Voir le document complet
316
Monolithic Integration of Diluted-Nitride III–V-N Compounds on Silicon Substrates: Toward the III–V/Si Concentrated Photovoltaics
... reduce the minority carrier diffusion length of the absorber as it has already been reported in diluted-nitride compounds (Geisz, Friedman, and Kurtz 2002) and which could explain the current ... Voir le document complet
11
Multi-phase-field modeling of anisotropic crack propagation for polycrystalline materials
... work to simulate failure in polycrystalline mate- ...Moreover, the failure in grain boundary is described by a cohesive law incorporated in the regularized variational frame- ...used to ... Voir le document complet
29
The effect of nucleation on the quality of MBE-ZnSe/III-V heterostructures
... Cathodoluminescence (CL) imaging was the most instructive characterization technique used, providing clear proof of a reduction in defect density of ZnSe epilayers gro[r] ... Voir le document complet
97
A contribution to the multi-link propagation channel modeling for 4G radio mobile relaying systems
... In the literature, two different types of relaying network have been in- vestigated ...[8]. The first one called Mobile Relay proposes to use other user’s terminals to relay the ... Voir le document complet
178
Modeling dynamic systems : contribution to the unsteady behavior of a condenser based on the pseudo-bond graph approach
... domains of the physic (mechanic, hydraulic, thermal, chemical, and electrical ...difficult to develop a standard model based on partial derivative equations (CFD 1 ...). The bond graph ... Voir le document complet
20
Contribution to the study of physical properties of CZTX (X=S, Se) solar materials
... solar materials for the kesterite (KS) and stannite (ST) types by employing first principles calculation approach, using the plane wave pseudo potential calculations (PP-PW) implemented in the ... Voir le document complet
98
Contribution to the modeling and optimization of new optoelectronic devices
... enhancement of 485% in the device responsivity is recorded as compared to the experimental results of the ZnO-based ...self-powered. The optimized design with ... Voir le document complet
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