[PDF] Top 20 Carrier relaxation dynamics in InAs/InP quantum dots

... been measured and the values reported in Fig. 4-c for different excitation powers. The spectra clearly show a reducing of the QD 1 decay time. This behavior, if we rely on the results of Ohnesorge et al., evidence ... Voir le document complet

... semiconductor quantum dots (QDs) have been intensively studied in the last ...three-dimensional carrier confinement, yielding discrete atom-like energy ...as InAs/GaAs QDs are now well ... Voir le document complet

... single-layer InAs/InP 共001兲 self-assembled quantum dots is measured from 10 to 300 ...of carrier thermal escape from a quantum dot to the wetting layer and to the InP ... Voir le document complet

... An InAs QD layer is grown by gas-source molecular beam epitaxy on InP(113)B substrate at ...480°C. In order to control the QDs maximum height, and to reduce their inhomogeneous size dispersion, the ... Voir le document complet

... of InAs QDs with In ...operate in the C- or L-band using a QD double cap growth procedure and a GaP sublayer [16,17] .... In the double cap process the dots are partially capped with a ... Voir le document complet

... only dots with ground state energy equal to the detection energy are detected, this technique allows one to circumvent part of the inhomogeneous broadening observed in the non-resonant photoluminescence ... Voir le document complet

... negligible in InAs QDs at low temperature [19, ...rier dynamics is observed in our experiments ...PL dynamics due to the exciton dark states ...role in the bright states ... Voir le document complet

... manufactured in large numbers and at low- ...self-assembled quantum dots (QDs) from which the shape of the density of states, as well as the carrier confinement, does substantially improve the ... Voir le document complet

... other InAs-based QD systems but still in a reasonable range (see ...difference in QDs size between the two QDs systems, even if it is significant, cannot fully explain such a large energy ...observed ... Voir le document complet

... The InAs /InP QD DFB gain material used in this study was grown by chemical beam epitaxy (CBE) on a (100) oriented n-type InP ...of InAs QDs with 30 nm In ...operate in ... Voir le document complet

... modulation dynamics are studied in a semi-analytical approach based on a set of coupled rate equations, incorporating the special features of ...The carrier scattering processes (capture and ... Voir le document complet

... a carrier confined in a semiconductor quan- tum dot 共QD兲 is considered as a good candidate for realizing quantum bits in the solid ...spin relaxation or decoherence in QDs at low ... Voir le document complet

... relaxation frequency leads to a K-factor of ...evidenced in InAs/GaAs QD lasers 21 ...result in higher modal gain, allowing laser emission from shorter cavities compatible with 10 Gb/s direct ... Voir le document complet

... Electron dynamics in quantum dots ~QD! has been the subject of controversy for quite a number of ...of relaxation rates in quantum dots caused by the dis- crete ... Voir le document complet

... islands in order to relax the strain ...as quantum dots, and they are appreciated for their unique properties and applications in optoelectronic ...producing quantum dots are ... Voir le document complet

... see the onset of an absorption at 80 meV with a FWHM of the order of 20 meV. The sharp notches near 78, 82, and 86 meV are due to two-phonon absorptions in the InP substrate. The 80-meV peak is not related ... Voir le document complet

... interband relaxation rate with a characteristic carrier lifetime which is typically in the order of hundreds of ...and carrier heating (CH), have their origin in the modulation of the ... Voir le document complet

... to carrier-induced refractive index shift ...absorption in QDs, and change the modal effective index ...al. in the case of photonic crystal lasers [18], the change from the first to the second regime ... Voir le document complet

... increase in T0 from 72 to 88 ...兴 Quantum dot 共QD兲 lasers have generated a huge amount of interest for applications, including communication net- works, due to their anticipated superior electronic and ... Voir le document complet

... intermixing in InAs/InP ...mechanism. In the first set of experiments, the influence of the annealing temperature, the distance between implantation damage in the InP capping ... Voir le document complet