[PDF] Top 20 Antibonding ground states in InAs quantum-dot molecules
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Antibonding ground states in InAs quantum-dot molecules
... 78.55.Cr Quantum dots have confined energy levels analogous to ordinary ...Two quantum dots in close proximity can be viewed as an artificial diatomic molecule when coherent tunnel coupling leads to ... Voir le document complet
5
A solid state source of photon triplets based on quantum dot molecules
... contrast, quantum dots offer the most practical route in building scalable quantum architectures and their efficiency reaches almost unity per excitation pulse, enabling high count ...The ... Voir le document complet
9
Coherent level mixing in dot energy spectra measured by magnetoresonant tunneling spectroscopy of vertical quantum dot molecules
... the ground state sub- tracted from the energy of all states, which eliminates the influence of the diamagnetic shift of the ground state, as this is appropriate for the measurement scheme employed ... Voir le document complet
16
Carrier dynamics and saturation effect in (113)B InAs/InP quantum dot lasers
... radiative states populations kinetic photoluminescence measurements have been ...described in section ...that in both cases the GS population rise time is less than 100 ps, which is attributed to an ... Voir le document complet
21
Dynamic properties of InAs/InP(311B) quantum dot Fabry-Perot lasers emitting at 1.52-μm
... for InAs/GaAs QDs emitting at 1.3 µm. In conclusion, we thoroughly investigated the static and dynamic properties of InAs/InP (311)B quantum dot lasers emitting on the ground ... Voir le document complet
15
Greenberger-Horne-Zeilinger states in a quantum dot molecule
... GHZ ground states of spin molecules could be used as long-lived sources of ...triple quantum dot molecules 5 – 7 with one electron on each dot to realize a three spin ... Voir le document complet
8
P-doping effect on external optical feedback dynamics in 1.3-microns InAs/GaAs quantum dot laser epitaxially grown on silicon
... is in favor of the development of future large-scale, small-footprint, low-cost and energy-efficient silicon photonic integrated ...20 In this paper, we characterize two chaos-free InAs/GaAs QD ... Voir le document complet
9
Non-symmetrized quantum noise in a Kondo quantum dot
... noise in quantum systems are the following: (i) Is the measured noise the symmetrized one or the non-symmetrized one? (ii) Can we have over bias noise at low temperature? (iii) How is the noise affected by ... Voir le document complet
8
Volmer–Weber InAs quantum dot formation on InP (113)B substrates under the surfactant effect of Sb
... orientations. InAs islands formed on InP (001) substrates show high- index facets like (114), 27 , 28 while the islands obtained on (113)B substrates are found to have low-index facets in {001}{110} and ... Voir le document complet
6
Carrier relaxation dynamics in InAs/InP quantum dots
... been measured and the values reported in Fig. 4-c for different excitation powers. The spectra clearly show a reducing of the QD 1 decay time. This behavior, if we rely on the results of Ohnesorge et al., evidence ... Voir le document complet
13
Spectroscopy of electronic states in InAs quantum dots grown on In(x)Al(1-x)As/InP(001)
... than in absorption ...the ground state of the dots in sample B lays 250 meV below the ...the in- tense absorptions observed at the same energy in PIA experi- ...energy in spite ... Voir le document complet
7
High performance InAs/InP quantum dot 34462-GHz C-band coherent comb laser module
... 3. Experimental results, noise performance analysis and discussions Figure 4 (a) and (b) show the optical spectrum and RF beat spectrum of the InAs/InP QD C- band CCL module. The center wavelength is 1537.77 nm ... Voir le document complet
9
Thermal conductivity of InAs quantum dot stacks using AlAs strain compensating layers on InP substrate
... layer in the middle of the 10nm InGaAs ...layer in order to conserve a good quality growth front ...of InAs QDs grown on InGaAs buffer on InP ... Voir le document complet
24
Light-hole Exciton in Nanowire Quantum Dot
... 6 Quantum dots inserted inside semiconductor nanowires are extremely promising candidates as building blocks for solid-state based quantum computation and ...create in a single magnetic nanowire ... Voir le document complet
11
Coulomb Blockade in a Quantum Dot
... However, it can be seen from the data that as the gate voltage is increased and the coupling between the dot and the leads becomes stronger, the sharp Coulomb blockade structures begin t[r] ... Voir le document complet
2
Thermally insensitive determination of the chirp parameter of InAs/GaAs quantum dot lasers epitaxially grown onto silicon
... 0.13 in QD lasers directly grown onto silicon as a result of the low threading dislocation density ...α-factors. In order to confirm our initial measurements [12], this work investigates the α-factor with a ... Voir le document complet
9
Single-exciton energy shell structure in InAs/GaAs quantum dots
... results in these peaks moving in different directions in energy, thus causing changes in the overall PL ...the states in these shells results in larger shifts due to ... Voir le document complet
9
Quantum interference in exciton-Mn spin interactions in a CdTe semiconductor quantum dot
... levels in the s shell as a function of the number of shells, including electron-hole direct Coulomb interaction and electron-Mn and hole-Mn interactions for parameters typical for a CdTe quantum ...the ... Voir le document complet
6
Triplet and in-gap magnetic states in the ground state of the quantum frustrated fcc antiferromagnet Ba2YMoO6
... sets in both figure ...scattering in this region is significantly affected by phonons, particularly the bands near 11 and 17 meV evident in ...scattering in the in-gap ...singlet ... Voir le document complet
5
All inorganic colloidal quantum dot LEDs
... Because of these char- acteristics, a semiconductor laser with a QD active region promises, among other advantages, low and temperature-independent threshold current a[r] ... Voir le document complet
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