18 résultats avec le mot-clé: 'anisotropic excitonic effects energy function hexagonal boron nitride'
To check if the combined effect of electron-electron and electron-hole interaction does indeed explain the (anisotropic) shift of the RPA spectra, we carried out parameter-free
N/A
violates the symmetry of h-BN: since the hole is located on top of a nitrogen atom, the electron probability density should obey the threefold rotation symmetry of h-BN, unless
N/A
Hexagonal boron nitride tunnel barriers grown on graphite by high temperature molecular beam epitaxy. Deep ultraviolet emission in hexagonal
N/A
Le fait qu’un site soit situé à l’intérieur d’une zone ne signifie pas qu’un glissement de terrain surviendra inévitablement sur ce site, mais cela indique plutôt
N/A
High quality single atomic layer deposition of hexagonal boron nitride on single crystalline Rh(111) four-inch wafers.. Large-scale synthesis of uniform hexagonal boron nitride
N/A
We present a detailed discussion of the electronic band structure and excitonic dispersion of hexagonal boron nitride (hBN) in the single layer configuration and in three
N/A
We present a detailed discussion of the electronic band structure and excitonic dispersion of hexagonal boron nitride (hBN) in the single layer configuration and in three
N/A
Dynamic structure factor along three high symmetry lines in the first Brillouin zone ΓA, ΓK, and ΓM calculated in the GW-RPA (dashed lines) and from the solution of the BSE
N/A
Electron energy loss spectra have been measured on hexagonal boron nitride single crystals employing a novel electron energy loss spectroscopic set-up composed by an electron
N/A
The lowest-energy transitions of this group have also the larger amplitude M t λ (q), and they sum constructively in the steep part of the cumulant (E < 6.8 eV). This explains
N/A
By combining spatially resolved cathodoluminescence (SR-CL) spec- troscopy with a structural analysis of the crystal by means of Transmission Electron Microscopy (TEM) and Selected
N/A
Phonon-assisted recombination in silicon Phonon emission momentum conservation Phonon wavevector photon phonon.. Since k =0 at the zone center
N/A
3 a Top view of the charge density difference in the h-BN/ Rh(111) nanomesh. b, c Slice cutting through the middle of the pore through N and B atoms, respectively.. polarization in
N/A
We attempt to have a better comprehension of the optical and electronic properties of thin BN layers, in correlation with their structural properties and to better
N/A
Electronic energy-level diagram (at the G point of the supercell) for the N=14 (8,6) defect in monolayer hexagonal boron nitride, calculated using the Perdew-Burke-Ernzerhof
N/A
At this energy the q-DAP ionization takes place following Equations (2)-(3) and results in the regime crossover from Raman to photoluminescence. This can be ionization of
N/A
The analytical properties of the imaginary and real part of the frequency and temperature dependent memory function, that describe electron scattering on acoustic and optical
N/A
Therefore, the ecotoxicity of a commercial form of BNNT (containing tubes, hexagonal-boron nitride, and boron) was assessed in vivo toward larvae of the amphibian Xenopus
N/A