molecular beam epitaxial growth
Structural study and ferroelectricity of epitaxial BaTiO3 films on silicon grown by molecular beam epitaxy
... homogeneous surfaces with RMS ranging from 0.7 to 1.0 nm for the different growth temperatures. The average out-of- plane and in-plane parameters were determined by X-ray diffraction and their ratio is plotted in ...
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Impact of kinetics on the growth of GaN on graphene by plasma-assisted molecular beam epitaxy
... observed epitaxial relationships are qualitatively predicted by the lattice coincidence model, it fails to fully account for the position of the satellites XRD peaks around the preferred epitaxial ...
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UVB LEDs Grown by Molecular Beam Epitaxy Using AlGaN Quantum Dot
... temperature growth processes that can play a central role for the reduction of threading dislocation densities (TDD) induced by the low mobility of Al species [ 9 ...the growth temperatures [ 12 ], ...
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Epitaxial growth and structure of cobalt ferrite thin films with large inversion parameter on Ag(001)
... sample growth and characterization All films were prepared in a similar manner using one of two distinct experimental setups, both of which are fully equipped for sample preparation and analysis in an ultra-high ...
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Epitaxial growth of TbFe 2 on piezoelectric LiNbO 3 Z-cut
... by Molecular Beam Epitaxy (MBE) ...the epitaxial growth of the buffer layers and the subsequent TbFe 2 Laves phase ...possible epitaxial growth of the compound along the [111] ...
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Molecular beam epitaxy growth and optical characterization of GaN/AlGaN nanowire heterostructures emitting in the ultraviolet
... Eventually, electronic transitions can be non-radiative. Indeed, carrier recombinations do not always generate photons, especially those involving deep defects trapping carriers. Thus, crystal of low structural quality ...
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In situ measurement of AlAs and GaAs refractive index dispersion at epitaxial growth temperature
... The epitaxial techniques used for the fabrication of these devices, chemical vapor deposition (CVD), and molecular beam epitaxy (MBE), are more likely to meet this stringent requirement if real-time ...
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Molecular dynamics simulations of H-induced plasma processes and cluster-catalyzed epitaxial growth of thin silicon films
... with molecular dynamics ...the growth mechanisms of silicon thin films, e.g., amorphous and epitaxial silicon thin films using ionized cluster beam techniques [ 29 – 40 ...film growth ...
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AlN photonic crystal nanocavities realized by epitaxial conformal growth on nanopatterned silicon substrate
... ammonia-based molecular beam epitaxy on the top of the patterned silicon substrate and a free-standing membrane is achieved by selective etching of the silicon substrate through the holes of the photonic ...
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PLASMA-ASSISTED MOLECULAR BEAM EPITAXY OF (11-22)-ORIENTED III-NITRIDES
... their growth remains challenging due to the strong anisotropy of their surface properties, which leads to epitaxial layers with a high density of crystalline ...the growth of semipolar planes, which ...
196
Fast atom diffraction inside a molecular beam epitaxy chamber, a rich combination
... to molecular beam epitaxy (MBE) are reviewed here: the ability of GIFAD to provide in-situ a precise description of the atomic-scale surface topology, and its ability to follow larger-scale changes in ...
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Role of Sb in the growth and optical properties of 1.55μmu m GaInN(Sb)As/GaNAs quantum-well structures by molecular-beam epitaxy
... Role of Sb in the growth and optical properties of 1.55 m GaInN„Sb…As/ GaNAs quantum-well structures by molecular-beam epitaxy H. D. Sun, a兲 S. Calvez, and M. D. Dawson Institute of Photonics, ...
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Surface and interface contributions to III-V/Si hetero-epitaxial growth : Theory and Experiments
... direct growth of III-Vs on silicon i àaà f o t-e d às he eà ithàtheàad a tageàto be compatible with very large scale integration (VLSI) applications ...the epitaxial growth of polar-III-Vs on ...
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Self-organized homo-epitaxial growth of (001) vanadium assisted by oxygen surface reconstruction
... homoepitaxial growth process is analyzed by using Auger spectroscopy, electron diffraction and scanning tunneling ...during growth is due to oxygen upward diffusion from the underneath V ...
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Selective epitaxial growth of III-V semiconductor heterostructures on Si substrates for logic applications
... In the second part of the paper, we report a detailed investigation of the SEG of InP in STI structures (Fig. 1). After a planarization step, this InP layer serves as a virtual substrate for the subsequent growth ...
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Selective epitaxial growth of III-V semiconductor heterostructures on Si substrates for logic applications
... Excellent selectivity of the InP growth with respect to SiO 2 could be demonstrated, as shown in Fig. 5a. We also studied the formation of crystal facets and of stacking faults (SF), which are commonly observed ...
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Growth and characterization of epitaxial thin films of epsilon ferrite (ε-Fe₂O₃).
... in forms different than nanoparticles, such as nanorods and nanowires 36–39 . A very important breakthrough was achieved when Ohkoshi et al. first showed how the magnetocrystalline anisotropy characterizing epsilon ...
203
Molecular mechanisms controlling plant growth during abiotic stress
... 2 and H 2 O 2 that can irreversibly damage proteins, membranes and DNA. However, changes in chloroplast redox status during overexcitation act as a signal that leads to the rapid activation of energy-dissipating mech- ...
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Polarity conversion of GaN nanowires grown by plasma-assisted molecular beam epitaxy
... the growth, corresponding to GaN NWs about 1 micrometer long, the sample was covered with an AlN cap grown in nearly stoichiometric conditions and taken out from the MBE machine for ...the growth, namely ...
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Epitaxial growth and ferrimagnetic behavior of MnFe2O4(111) ultrathin layers for room-temperature spin filtering
... III. RESULTS AND DISCUSSION A. Structural and chemical characterizations The magnetism in ferrite thin films has been shown to be very sensitive to effects such as strain 20 and stoichiometry, 13 while the structure and ...
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