magnetic tunnel junctions
Indium Tin Oxide optical access for magnetic tunnel junctions in hybrid spintronic–photonic circuits
... A closer analysis of both process flows was done based on the cumulative distribution functions (CDF) of both process flows, since it is then possible to quantify differences in device TMR yield. For all analyzed ...
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Diffusive model of current-in-plane-tunneling in double magnetic tunnel junctions
... barrier magnetic tunnel junctions in diffusive ...double junctions that are described by introducing two typical length ...barrier magnetic tunnel ...
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SPICE modelling of magnetic tunnel junctions written by spin-transfer torque
... instance, Magnetic Random Access Memories (MRAMs) [1] are considered as one of the most promising candidates for universal memory since they combine non-volatility, high-speed, high- density, low-power ...
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Influence of spin-orbit interaction within the insulating barrier on the electron transport in magnetic tunnel junctions
... large to reasonably try to extract a corresponding value of the spin orbit constant. In conclusion, the anisotropy of the TMR (ATMR) was investigated both theoretically and experimentally in MgO-based magnetic ...
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Taming the resistive switching in Fe/MgO/V/Fe magnetic tunnel junctions: An ab initio study
... MgO-based magnetic-tunnel junctions (MTJ) are also good candidates for RAM mem- ories since it was shown that they have good RSw repro- ducibility [ 6 ...
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Heating asymmetry induced by tunneling current flow in magnetic tunnel junctions
... in magnetic tunnel junctions can have a significant influence in the final temperature profile within the ...a tunnel bar- rier giving rise to interesting thermoelectric effect 6 accom- ...
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Enhanced annealing stability and perpendicular magnetic anisotropy in perpendicular magnetic tunnel junctions using W layer
... torque magnetic random access memories (STT-MRAM) are the focus of intense research and develop- ment efforts due to their non-volatility, low-energy con- sumption, high-speed performance, quasi-infinite ...
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Asymmetric Magnetization Switching in Perpendicular Magnetic Tunnel Junctions: Role of the Synthetic Antiferromagnet’s Fringe Field
... innovative magnetic memory technology, namely spin-transfer torque magnetic ran- dom access memories (STT ...of magnetic tunnel junctions with electrodes exhibiting a strong ...
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Influence of magnetic electrodes thicknesses on the transport properties of magnetic tunnel junctions with perpendicular anisotropy
... on Magnetic Tunnel Junctions (MTJs) are promising devices as they combine several advantages: non-volatility, high write speed of a few ns, density (6F 2 ), infinite endurance (>10 16 write ...
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Analytical description of ballistic spin currents and torques in magnetic tunnel junctions
... In this work we demonstrate explicit analytical expressions for both charge and spin currents which constitute the 2x2 spinor in magnetic tunnel junctions with non-collinear magnetizations under ap- ...
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Perpendicular magnetic tunnel junctions with a synthetic storage or reference layer: A new route towards Pt- and Pd-free junctions
... magnetized magnetic tunnel junctions (MTJ) with a crystalline MgO barrier has been a major breakthrough 1,2 ...Perpendicular Magnetic Anisotropy (PMA) is interesting in several respects: i) it ...
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Magnetic and transport properties of single and double perpendicular magnetic tunnel junctions
... A lot of effort has followed to optimize the anisotropy and transport properties of perpendicular magnetic tunnel junctions focusing in particular on the materials aspect. Indeed, these properties ...
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Spin-Torque Influence on the High-Frequency Magnetization Fluctuations in Magnetic Tunnel Junctions
... in magnetic tunnel junctions, as it was al- ready reported in a different experiment [ 6 ...for magnetic tunnel junctions [ 14 ...of magnetic tunnel ...
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Tunneling anisotropic magnetoresistance in fully epitaxial magnetic tunnel junctions with different barriers
... in magnetic tunnel junctions (MTJs) has been extensively studied 1 – 5 due to its important applications in spintronic ...in junctions consisting of materials with strong SOC, such as GaMnAs 8 ...
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Spectroscopic and transport studies of Cox Fe1-x/MgO(001) -based magnetic tunnel junctions
... huge tunnel magnetoresistance (TMR) was the- oretically predicted in the single-crystalline Fe/MgO/Fe(001) ...based magnetic tunnel junctions (MTJs) is explained by con- sidering the full spin ...
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Influence of spin-transfer torque on thermally activated ferromagnetic resonance excitations in magnetic tunnel junctions
... on magnetic tunnel junctions show that thermal fluctuations of the magnetiza- tion are either amplified or quenched by subcritical spin-transfer torque depending on the current ...in magnetic ...
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Large inverse magnetoresistance in fully epitaxial Fe∕Fe3O4∕MgO∕Co magnetic tunnel junctions
... micron-sized magnetic tunnel junctions have been elaborated on MgO 共001兲 ...for magnetic tunnel junctions including an Fe 3 O 4 layer and a MgO tunnel barrier ...
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Magnetotransport in MgO-based magnetic tunnel junctions grown by molecular beam epitaxy (invited)
... 3 Synchrotron SOLEIL-CNRS, L'Orme des Merisiers, Saint-Aubin, BP48, 91192 Gif-sur-Yvette cedex, FRANCE Abstract The strong impact of MBE growth and Synchrotron Radiation characterization tools in the understanding of ...
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Second order anisotropy contribution in perpendicular magnetic tunnel junctions
... of magnetic anisotropy in FM layers and multilayers is very important towards the pMTJ stack optimization for future use in STT-MRAM ...of magnetic anisotropy constants at sheet film ...of magnetic ...
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Respective influence of in-plane and out-of-plane spin-transfer torques in magnetization switching of perpendicular magnetic tunnel junctions
... perpendicular magnetic tunnel junctions (pMTJ) constitute the storage element of spin-transfer torque magne- toresistive random access memory (STT-MRAM) [ 1 – 6 ...high tunnel ...
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