ionizing dose
High total ionizing dose and temperature effects on micro- and nano-electronic devices
... MGy dose levels combined with elevated ...MGy dose levels under elevated ...by ionizing radiations and elevated temperatures to take margins enough to prevent any circuit function failure instead of ...
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Radiation Effects in Pinned Photodiode CMOS Image Sensors: Pixel Performance Degradation Due to Total Ionizing Dose
... to ionizing radiation up to 10 kGy(SiO ...Total Ionizing Dose (TID) induced Dark Current Random Telegraph Signal (DC-RTS) cen- ters active in the photodiode (even when the Transfer Gate (TG) is ...
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Radiation Hardness Comparison of CMOS Image Sensor Technologies at High Total Ionizing Dose Levels
... [et al.] Radiation Hardness Comparison of CMOS Image Sensor Technologies at High Total Ionizing Dose Levels.. (2018) In: Radiation Effects on Optoelectronic Detectors (CNES Workshop), 28[r] ...
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Radiation Hardening of Digital Color CMOS Camera-on-a-Chip Building Blocks for Grad Total Ionizing Dose Environments
... [et al.] Radiation Hardening of Digital Color CMOS Camera-on-a-Chip Building Blocks for Grad Total Ionizing Dose Environments.. (2016) In: Radiation Effects on Optoelectronic Detectors ([r] ...
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Radiation Hardness Comparison of CMOS Image Sensor Technologies at High Total Ionizing Dose Levels
... Céline Monsanglant-Louvet, Mélanie Osmond, Hortense Desjonquères, Jean-Reynald Macé, Pierre Burnichon, Jean-Pierre Baudu, and Stéphane Plumeri Abstract— The impact of the manufacturing process on the radiation-induced ...
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Multi-MGy Radiation Hard CMOS Image Sensor: Design, Characterization and X/Gamma Rays Total Ionizing Dose Tests
... Aziouz Chabane, Paola Cervantes, and Claude Marcandella Abstract—A Radiation Hard CMOS Active Pixel Image Sensor has been designed, manufactured and exposed to X and -ray sources up to several MGy of Total ...
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Total Ionizing Dose Radiation-Induced Dark Current Random Telegraph Signal in Pinned Photodiode CMOS Image Sensors
... At low ionizing dose 300 rad and 10 krad, RTS centers can be situated at oxide interfaces, but for high ionizing dose 100 krad a new source adds a dark current contribution whatever the [r] ...
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Radiation Hardness Comparison of CMOS Image Sensor Technologies at High Total Ionizing Dose Levels
... Céline Monsanglant-Louvet, Mélanie Osmond, Hortense Desjonquères, Jean-Reynald Macé, Pierre Burnichon, Jean-Pierre Baudu, and Stéphane Plumeri Abstract— The impact of the manufacturing process on the radiation-induced ...
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Radiation Hardening of Digital Color CMOS Camera-on-a-Chip Building Blocks for Multi-MGy Total Ionizing Dose Environments
... This is an author-deposited version published in: http://oatao.univ-toulouse.fr/ Eprints ID: 17619 To cite this version: Goiffon, Vincent and Rolando, Sébastien and Corbière, Franck and Rizzolo, Serena and Chabane, ...
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High Total Ionizing Dose and Temperature Effects on Micro- and Nano-Electronic Devices
... FDSOI devices exhibit I-V characteristics which retrieve their initial shape after annealing in Fig. 9. It highlights that the I-V curve of the device that experienced a 1 MGy irradiation followed by 250 annealing (blue ...
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Total ionizing dose versus displacement damage dose induced dark current random telegraph signals in CMOS image sensors
... In this paper, we study and compare the dark current RTS due to displacement damage dose ( ) and to total ionizing dose ( ) in CIS processed in deep sub- micron technology. In order to separate both ...
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Total-Ionizing Dose Effects on Charge Transfer Efficiency and Image Lag in Pinned Photodiode CMOS Image Sensors
... For TID > 5 kGySiO2 , the defects generated in the PMD influence the whole photodiode potential inducing a pinning voltage increase and degrading the charge transfer by enlarging the pot[r] ...
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Total-Ionizing Dose Effects on Charge Transfer Efficiency and Image Lag in Pinned Photodiode CMOS Image Sensors
... For TID > 5 kGySiO2 , the defects generated in the PMD influence the whole photodiode potential inducing a pinning voltage increase and degrading the charge transfer by enlarging the pot[r] ...
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Multi-MGy total ionizing dose induced MOSFET variability effects on radiation hardened CMOS image sensor performances
... MGy dose levels," in IEEE Nuclear and Space Radiation Effects Conference, New Orleans (USA), ...Total Dose Effects in 65-nm MOSFETs," IEEE Trans ...
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Multi-MGy total ionizing dose induced MOSFET variability effects on radiation hardened CMOS image sensor performances
... MGy dose levels," in IEEE Nuclear and Space Radiation Effects Conference, New Orleans (USA), ...Total Dose Effects in 65-nm MOSFETs," IEEE Trans ...
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Total Ionizing Dose Effects on a Radiation-Hardened CMOS Image Sensor Demonstrator for ITER Remote Handling
... Index Terms—ITER, CMOS Image Sensors, CIS, Active Pixel Sensors, APS, Image Sensors, Radiation Hard, Rad Hard, Radiation Tolerant, Monolithic Active Pixel Sensor, MAPS, Ionizing Radiatio[r] ...
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Ionizing radiation effects on CMOS imagers manufactured in deep submicron process
... Figure 10b gives further insight on the off-state current increase. It presents this increase as a function of ionizing dose for every transistor dimension. ‡ One can see that this effect is strongly ...
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Low-dose interleukin-2 fosters a dose-dependent regulatory T cell tuned milieu in T1D patients
... clearly dose-dependent, is a major parameter to take in consideration for designing regimen of ...a dose of 1 MIU/day, a 5-day induction course followed by one injection every two weeks would allow to ...
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Biological equivalent dose studies for dose escalation in the stereotactic synchrotron radiation therapy clinical trials.
... the dose deposition in the tumor and the sparing of healthy tissues for a continuous arch ...tolerance dose for necrosis in the skull is 60 Gy in a standard fractionation scheme 共2 ...
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Impact of dose-rate on the low-dose hyper-radiosensitivity and induced radioresistance (HRS/IRR) response.
... of dose-rate on the HRS/IRR response By investigating one of the largest ranges of dose-rates applied in HRS/IRR studies, our data show that the maximal HRS and IRR responses obtained with low-LET radiation ...
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