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InAs/InP quantum dots

Scalable routes to single and entangled photon pair sources : tailored InAs/InP quantum dots in photonic crystal microcavities

Scalable routes to single and entangled photon pair sources : tailored InAs/InP quantum dots in photonic crystal microcavities

... of InP deposited on a planar substrate, the pyramidal nanotemplate height h and top width w are given by ...deposited InP for a 500 nm wide oxide window and a sidewall capture fraction of ...single ...

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Carrier relaxation dynamics in InAs/InP quantum dots

Carrier relaxation dynamics in InAs/InP quantum dots

... Despite all these analyses, informations about the carrier dynamics in InAs/InP QDs are still lacking. These QDs are more suitable for telecom applications since they emit in the 1.55 µ m wavelength region. ...

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Spectroscopy of electronic states in InAs quantum dots grown on In(x)Al(1-x)As/InP(001)

Spectroscopy of electronic states in InAs quantum dots grown on In(x)Al(1-x)As/InP(001)

... high-density InAs self-assembled quantum dots ~QDs! in an In x Al 12x As matrix, lattice matched to an InP ~001! ...the InAs QDs optical properties depend on the deposited amount of ...

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Carrier thermal escape in families of InAs/InP self-assembled quantum dots

Carrier thermal escape in families of InAs/InP self-assembled quantum dots

... single-layer InAs/InP 共001兲 self-assembled quantum dots is measured from 10 to 300 ...a quantum dot to the wetting layer and to the InP matrix, followed by transport, recapture ...

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Asymmetric Stark Shift in InAs/GaAsP(Q1.18) quantum dots grown on (311)B InP substrate

Asymmetric Stark Shift in InAs/GaAsP(Q1.18) quantum dots grown on (311)B InP substrate

... of InAs/InGaAsP (Q 1.18 ) quantum dots (QD) embedded in a PIN diode on InP(311B) give access to the quantum-confined Stark shift of the ground state transition energy in the ...this ...

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Self-assembled InAs quantum dots grown on InP (3 1 1)B substrates: Role of buffer layer and amount of InAs deposited

Self-assembled InAs quantum dots grown on InP (3 1 1)B substrates: Role of buffer layer and amount of InAs deposited

... of InAs QDs on AlGaInAs alloys lattice matched on InP (311)B substrates have been ...of InAs deposited. Small quantum dots (minimum diameter = 20 nm) in very high density ...11 ...

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Electronic structure and carrier dynamics in InAs/InP double-cap quantum dots

Electronic structure and carrier dynamics in InAs/InP double-cap quantum dots

... semiconductor quantum dots (QDs) have been intensively studied in the last ...as InAs/GaAs QDs are now well known ...of InAs/InP QDs [4 ,5 ] or quantum dashes ...

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Room-temperature InAs/InP Quantum Dots laser operation based on heterogeneous “2.5 D” Photonic Crystal

Room-temperature InAs/InP Quantum Dots laser operation based on heterogeneous “2.5 D” Photonic Crystal

... mainly attributed to carrier-induced refractive index shift [16]. More precisely, the λ -L curve exhibits a first regime, well under 1mW, where the blue-shift rate is relatively important. For such peak powers, injected ...

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Structural & Spectroscopic Study of InAs/InP Quantum Dots for Dual-Frequency Laser Engineering

Structural & Spectroscopic Study of InAs/InP Quantum Dots for Dual-Frequency Laser Engineering

... Wavelength beating from a Coherent dual wavelength Quantum Dots (QDs) based Vertical External Cavity Surface Emitting. Laser (VECSEL)[r] ...

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InAs QDs on InP : Polarization insensitive SOA and non-radiative Auger processes

InAs QDs on InP : Polarization insensitive SOA and non-radiative Auger processes

... stacked InAs/InP columnar quantum dots (CQDs) for polarization insensitive semiconductor optical amplifier (SOA) in telecommunications applications are studied ...in InAs/InP ...

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Atomistic theory of electronic and optical properties of InAsP/InP nanowire quantum dots

Atomistic theory of electronic and optical properties of InAsP/InP nanowire quantum dots

... cylindrical InAs/InP quantum dots in the zincblende crystal phase [ 66 , 67 ...zincblende InAs/InP quantum dots with InAs/GaAs quantum dots [ ...

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Efficiency limiting processes in 1.55 μm InAs/InP-based quantum dots lasers

Efficiency limiting processes in 1.55 μm InAs/InP-based quantum dots lasers

... of InAs QDs deposited using a double cap procedure 7 in a lattice matched InGaAsP waveguide whose composition was adjusted to have a room temperature 共RT兲 photo- luminescence peak at ...

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Vacancy-mediated intermixing in InAs/InP(001) quantum dots subjected to ion implantation

Vacancy-mediated intermixing in InAs/InP(001) quantum dots subjected to ion implantation

... As/ InP quantum wells 共QWs兲 were prepared to trap vacancies released by the implantation damage while not inhibiting the effect of the ...ion-implanted InP capped samples is mediated by ...

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High performance InAs/InP quantum dot 34462-GHz C-band coherent comb laser module

High performance InAs/InP quantum dot 34462-GHz C-band coherent comb laser module

... on InAs/InP quantum dot (QD) multi-wavelength lasers emitting light over a large wavelength range covering the C- and L-bands ...of InAs semiconductor dots less than 50 nm in ...the ...

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InAs/InP quantum dash mode locked lasers for optical communications

InAs/InP quantum dash mode locked lasers for optical communications

... Résumé xvii autrement dit, une certaine forme de blocage de modes. Si le FWM est principalement responsable de la cohérence intermodale, qui se traduirait par le rapport entre les largeurs de raies optique et RF et non ...

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Spectral Analysis of 1.55-μm InAs/InP(113)B Quantum-Dot Lasers Based on a Multipopulation Rate Equations Model

Spectral Analysis of 1.55-μm InAs/InP(113)B Quantum-Dot Lasers Based on a Multipopulation Rate Equations Model

... ferent dots interconnected with the ...the InAs–GaAs system [11] but in the case of InAsInP(113)B system it is assumed that at low injection rates, the relaxation processes are ...

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Volmer–Weber InAs quantum dot formation on InP (113)B substrates under the surfactant effect of Sb

Volmer–Weber InAs quantum dot formation on InP (113)B substrates under the surfactant effect of Sb

... as quantum dots, and they are appreciated for their unique properties and applications in optoelectronic ...producing quantum dots are Ge/Si, 1 (Ga)InAs/GaAs (001), 2 and ...

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MBE growth optimization and optical spectroscopy of InAs/GaAs quantum dots emitting at 1.3μm in single and stacked layers

MBE growth optimization and optical spectroscopy of InAs/GaAs quantum dots emitting at 1.3μm in single and stacked layers

... to InP, it remains very important to control the growth of QDs on GaAs emitting at ...the quantum dot (QD) photoluminescence (PL) needs to be as small as possible (state of the art is less than 20 meV [5,6] ...

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Narrow spectral linewidth in InAs/InP quantum dot distributed feedback lasers

Narrow spectral linewidth in InAs/InP quantum dot distributed feedback lasers

... self-assembled quantum dots (QDs) from which the shape of the density of states, as well as the carrier confinement, does substantially improve the laser per- ...both InAs/GaAs and ...

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High-performance 1.52 μm InAs/InP quantum dot distributed feedback laser

High-performance 1.52 μm InAs/InP quantum dot distributed feedback laser

... The InAs /InP QD DFB gain material used in this study was grown by chemical beam epitaxy (CBE) on a (100) oriented n-type InP ...of InAs QDs with 30 nm In ...the dots on a thin GaP ...

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