InAs/GaAs quantum dot
Thermally insensitive determination of the chirp parameter of InAs/GaAs quantum dot lasers epitaxially grown onto silicon
... of InAs/GaAs quantum dot (QD) lasers epitaxially grown on silicon with a measurement technique evaluating the gain and wavelength changes of the suppressed side modes by optical injection ...
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P-doping effect on external optical feedback dynamics in 1.3-microns InAs/GaAs quantum dot laser epitaxially grown on silicon
... µm InAs/GaAs quantum dot laser monolithically grown on silicon,” Photonics Research 6(11), 1062–1066 ...on quantum dots,” physica status solidi (a) 203(14), 3523–3532 ...
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Optical feedback instabilities in a monolithic InAs/GaAs quantum dot passively mode-locked laser
... other hand, by using quantum well (QW) based monolithic colliding-pulse passive MLLs, Passerini et al. have shown that optical feedback negatively affects the phase-locking relation between the longitudinal ...
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Carrier dynamics and saturation effect in (113)B InAs/InP quantum dot lasers
... laser, quantum dots, carrier dynamics, rate equation Introduction While optics has proven to be the most practical response to the high traffic rate demand for long-haul transmission, its extension to the ...
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Thermal conductivity of InAs quantum dot stacks using AlAs strain compensating layers on InP substrate
... 3nm spacing layers have also shown a clear reduction in thermal conductivity (<1W/mK) [4] which is a promising result for applications in thermoelectricity. Looking at the III-V compounds family, InP and GaAs ...
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Modulation dynamics of InP-based quantum dot lasers and quantum cascade lasers
... the InAs/InP Qdot material system, the GS laser has natural potential to emit at ...emission InAs/GaAs Qdot laser with a large-signal modulation capability up to ...
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MBE growth optimization and optical spectroscopy of InAs/GaAs quantum dots emitting at 1.3μm in single and stacked layers
... on GaAs emitting at ...the quantum dot (QD) photoluminescence (PL) needs to be as small as possible (state of the art is less than 20 meV [5,6] ) and a high-density of self-assembled QDs is required ...
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Spectral Analysis of 1.55-μm InAs/InP(113)B Quantum-Dot Lasers Based on a Multipopulation Rate Equations Model
... More particularly, in the case of the QD lasers grown on InP substrates, it is has been shown in [15] that when a direct relaxation channel from the WL to the GS is taken into account, the impact of the double laser ...
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Atomistic tight-binding theory of multiexciton complexes in a self-assembled InAs quantum dot
... of InAs/ GaAs self-assembled quantum ...an InAs/GaAs lens-shaped quantum ...the InAs/GaAs valence-band offsets and InAs ...
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Carrier LO Phonon Interactions in InAs/GaAs Quantum Dots:<br />Electronic Polarons and Excitonic Polarons
... In Chapter 4, we moved on to the investigation of interband transitions of self- assembled quantum dots. Using photoluminescence excitation spectroscopy under strong magnetic fields up to 28 T, the energy levels ...
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Dynamic properties of InAs/InP(311B) quantum dot Fabry-Perot lasers emitting at 1.52-μm
... InAs/GaAs QDs 19 . We believe that above threshold, the dot GS occupation probability is saturated 19 ...in InAs/InP (311)B QD lasers result in a smaller rate of decrease of the differential ...
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High-performance 1.52 μm InAs/InP quantum dot distributed feedback laser
... and quantum well (QW) semiconduc- tor lasers [1] ...mm InAs/GaAs QD distributed feedback (DFB) lasers with laterally loss- or index- coupled gratings have been demonstrated [3] ...of InAs/ ...
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Volmer–Weber InAs quantum dot formation on InP (113)B substrates under the surfactant effect of Sb
... as quantum dots, and they are appreciated for their unique properties and applications in optoelectronic ...producing quantum dots are Ge/Si, 1 (Ga)InAs/GaAs (001), 2 and InAs/InP ...
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Narrow spectral linewidth in InAs/InP quantum dot distributed feedback lasers
... self-assembled quantum dots (QDs) from which the shape of the density of states, as well as the carrier confinement, does substantially improve the laser per- ...both InAs/GaAs and InAs/InP QD ...
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Antibonding ground states in InAs quantum-dot molecules
... Zeeman splitting arise from the contribution of the GaAs barrier to the net g factor for the delocalized hole [ 10 ]. In Figs. 2(d) – 2(f ) we show the measured change in Zeeman splitting from samples with ...
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Giant optical anisotropy in a single InAs quantum dot in a very dilute quantum-dot ensemble
... Recent studies of dilute QD arrays by high resolution near-field imaging have revealed structural anisotropy as evidenced by QD nucleation at the upper-step edge of terraces [22]. Moreover, detailed AFM studies of the ...
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Single-exciton energy shell structure in InAs/GaAs quantum dots
... self-assembled quantum dot 共QD兲, including excited states, is studied in a regime where the direct Coulomb attraction energy is comparable to the kinetic energy of the ...
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Polarization properties of InAs/InGaAsP/InP quantum dot stacks
... on InAs/GaAs QDs have already proven that the LH–HH wavefunction proportion changes mostly for dot periods below 5 nm, so for the 30 nm to 5 nm period range the HH–LH splitting remains high [ 21 ...
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InAs/InP quantum dot VECSEL emitting at 1.5 μm
... Following these QD growth optimizations, we have developed a VECSEL gain structure illustrated in Fig.3(b). The structure is composed of the InP-based QD active region and a GaAs- based distributed Bragg ...
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InAs quantum wires on InP substrate for VCSEL applications
... of quantum wires on a specific (775)B oriented substrate ...of quantum wires like structures on InP substrate, presenting efficient performances in laser devices and semiconductor optical amplifier (SOA) ...
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