GaN on silicon
Superlattice GaN-on-silicon heterostructures with low trapping in 1200 V
... Experimental For this study, the GaN-on-silicon heterostructures are manufactured by EpiGaN targeting 1200 V power applications. The step-graded buffer structure has a 5.5 m total thickness (process B) ...
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Fabrication of p-type porous GaN on silicon and epitaxial GaN
... form, GaN has received particular interest due to beneficial optical and electronic properties for gas sensors with high sensitivity 2 and light-emitting diodes (LEDs) with high light extraction ...porous ...
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Semipolar (10-11) GaN growth on silicon-oninsulator substrates: Defect reduction and meltback etching suppression
... semipolar GaN on silicon-on-insulator (SOI) substrates, with no melt- back etching and with a defect density strongly reduced compared to semipolar templates grown on patterned silicon sub- ...“bulk” ...
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Substrats innovants pour des composants de puissance à base de GaN
... Substrats innovants pour des composants de puissance à base de GaN Résumé A l’heure actuelle, le marché de l’électronique de puissance est dominé par les composants silicium. Néanmoins, de nouveaux matériaux ...
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2011 — Modélisation électrothermique de transistors en technologie GaN
... 2.3.3 Concentration du gaz bidimensionnel Les champs de polarisation spontanée et piézoélectrique, expliqués précédemment ont un impact direct sur la formation du gaz bidimensionnel, et sur la densité des porteurs de ...
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Silicon carbide equipments for process intensification of silicon reactions.
... Such features make it as an ideal candidate to Process Intensification and to batch to continuous transposition 1-5 . In this way, Bluestar Silicones proposes a R&D project, aiming to design new equipment for the ...
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Photoluminescence fatigue in three-dimensional silicon/silicon-germanium nanostructures
... The evolution of the PL intensity under 405 nm excita- tion and two excitation intensities (150 and 15 mW/cm 2 ) recorded at 0.82 eV is shown in Fig. When irradiated at 150 mW/cm 2 , a s[r] ...
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Dynamique de recombinaison dans les puits quantiques InGaN/GaN
... On remarque que dans les deux conditions d’excitation utilis´ ees (excitation s´ elective des puits ou via les barri` eres), le comportement du pic C II est tr` es diff´ e- rent. Dans le premier cas, son ´ energie ...
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Strain relaxation in InGaN/GaN herostructures
... Relaxation des contraintes dans les hétérostuctures InGaN/GaN Résumé: Dans ce travail, nous avons étudié la relaxation de couches d’hétérostructures InGaN/GaN obtenue par épitaxie en phase vapeur aux ...
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Confinement of vacancies during annealing of H implanted GaN sandwiched between two {InGaN/GaN} superlattices
... sandwiching GaN between two compressively strained InGaN or tensely strained AlGaN SLs onto the precipitation and growth of the extended defects formed by H implanta- tion and ...pure GaN, vacancies ...
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UV Emission from GaN Wires with m -Plane Core–Shell GaN/AlGaN Multiple Quantum Wells
... 14 Temperature-dependent PL studies performed under low injection conditions (10 W/cm 2 ) showed an S-shape spectral evolution of the luminescence, which is assigned to carrier localization presumably due to GaN ...
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Pépite | Fabrication de transistors HEMTs AlGaN/GaN de haute fiabilité sur substrat free-standing GaN de haute qualité
... Du fait qu’un projet scientifique demeure toujours à parfaire, nous citons les perspectives de cette étude comme étant prioritaires : dans une première phase, étant un intérêt principal dans la migration vers une ...
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Bringing silicon to light : luminescence in silicon nanostructures
... in Silicon Materials engineering, a relatively new phenomenon in materials science, is now being actively applied to Si in an attempt to overcome the indirect band gap limitations in light emission from Si ...
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GaN/AlGaN nanowires for quantum devices
... a GaN-AlN intermixing area that can extend ...a GaN/AlN MQW structure with the dimensions of ...sharp GaN/AlN interfaces and (b) with a 2-nm graded interface (first interface of the well along the ...
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An acoustic waveguide based on doubly-bonded silicon/PPT/silicon structures
... LiNbO 3 (3800 m.s -1 ), that is why we observe the same acoustic waves for both materials and for each guiding substrates but at a lower frequency for the LiTaO 3 . The guidance conditions also depend on the ratio ...
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Neutral silicon interstitials in silicon carbide: a first principles study
... of silicon carbide include very high temperatures and irradiation environments where, in spite of their relatively high formation energies, silicon interstitials are expected to be present in high ...
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Des histoires de la Silicon Valley
... Des histoires de la Silicon Valley, Th. Weil, juin 2009 p.8/24 avec les entreprises et à encourager les créateurs d’entreprise. Selon lui, Stanford a surtout eu le mérite, réel, de réagir rapidement aux demandes ...
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Alternative chemistries for etching of silicon dioxide and silicon nitride
... The author's research represents the initial stage of a project whose aim is to identify and characterize possible replacements for PFCs in the two principal etching applicati[r] ...
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Robust silicon waveguide polarization rotator with an amorphous silicon overlayer
... a silicon wire waveguide with a diagonally positioned a-Si overlayer based on the mode evolution principle, as illustrated in ...crystalline silicon (c-Si) wire waveguide is formed with the a-Si top ...the ...
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The 2018 GaN power electronics roadmap
... AlGaN/ GaN interface in 1992 and the first availability of GaN-on- SiC radio frequency power transistors in 1998, nitride semi- conductor hetero structure electron devices now constitute a hundred million ...
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