Electron mobility
Phonon-limited electron mobility in Si, GaAs and GaP using plane waves and Bloch states
... the electron mobility in GaAs that are summarized in ...The mobility obtained using the DG technique is also reported in ...the electron mobility in GaAs obtained with a 400 × 400 × 400 ...
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Critical Voltage for Electrical Reliability of GaN High Electron Mobility Transistors on Si Substrate
... Introduction GaN High Electron Mobility Transistors are promising devices for high power and high frequency applications. SiC is the most broadly used substrate for GaN HEMTs. Recently, Si has emerged as an ...
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AlGaN Channel High Electron Mobility Transistors with Regrown Ohmic Contacts
... high electron mobility transistors (HEMTs) on low cost silicon substrate have been extensively demonstrated as attractive candidates for next generation power devices in the 100–650 V range with low ...
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Study of deep traps in AlGaN/GaN high-electron mobility transistors by electrical characterization and simulation
... high-electron mobility transis- tors has been established by means of capacitance and current deep level transient spectroscopies ...the electron density, and the equipotential line distribution ...
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Correlating stress generation and sheet resistance in InAlN/GaN nanoribbon high electron mobility transistors
... Department of Electrical Engineering and Computer Science, Massachusetts Institute of Technology, Cambridge, Massachusetts 02139, USA (Received 23 July 2012; accepted 28 August 2012; published online 10 September 2012) ...
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High Lateral Breakdown Voltage in Thin Channel AlGaN/GaN High Electron Mobility Transistors on AlN/Sapphire Templates
... high power, high temperature future applications. Keywords: GaN; high-electron-mobility transistor (HEMT); ultra-wide band gap 1. Introduction AlGaN/GaN high-electron-mobility transistors ...
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AlGaN/GaN high electron mobility transistors on diamond substrate obtained through aluminum nitride bonding technology
... Gallium Nitride (GaN) high electron mobility transistors are attractive devices for millimeter wave power applications. Most devices are fabricated by hetero-epitaxy either on Si substrate because of its ...
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Multicharacterization approach for studying InAl(Ga)N/Al(Ga)N/GaN heterostructures for high electron mobility transistors
... high electron mobility transistor (HEMT) heterostructure grown by metal organic vapor phase epitaxy ...transmission electron microscope is sup- ported with results obtained for samples with a range ...
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AlGaN/GaN High Electron Mobility Transistors with Ultra -Wide Bandgap AlN buffer
... Conclusions This work show that ultrathin channel AlN-based transistors could provide low on-resistances with significantly higher breakdown field far beyond the theoretical limits of GaN-based devices. Indeed, ...
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A compact transport and charge model for GaN-based high electron mobility transistors for RF applications
... 2.1 Basics of device operation 2.1.1 Generic HEMT structure A High electron mobility transistor (HEMT) is a heterojunction field-effect device. The heterostructure formed between two materials with ...
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Investigation of ternary ΑlΙnΝ and quaternary ΑlGaΙnΝ alloys for high electron mobility transistors by transmission electron microscopy
... high electron mobility transistor ») à base de barrière AlInN épitaxié sur GaN, pouvant travailler avec de forte densité de puissance à très haute ...
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Dedicated design of experiments and experimental diagnostic tools for accurate reliability investigations on AlGaN/GaN high electron mobility transistors (HEMTs)
... high electron mobility transistors AlGaN/GaN fabricated within the GaN technology showed the same qualities added to this the high electron mobility in the ...
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2016 — New non-linear microwave network parameters with application to gallium nitride high electron mobility transistor modeling with x-parameters
... high electron mobility and saturation velocity, high sheet carrier concentration at heterojunction interfaces, high breakdown field, and low thermal impedance (Khan, Simin et ...
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Degradation mechanisms of GaN high electron mobility transistors
... Back of the envelope calculations support our hypothesis: we have shown that increased tensile strain due to high vertical electric field at around the critical v[r] ...
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Advanced technologies for improving high frequency performance of AlGaN/GaN high electron mobility transistors
... Understanding the origin of drain delay is an important step to improve high frequency performance of AlGaN/GaN HEMTs and it opens the door to further improvements i[r] ...
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Deeply-scaled GaN high electron mobility transistors for RF applications
... In addition, thanks to the flat extrinsic gm, the fT of the nanowire channel device showed a high linearity over a wide gate bias range although the maximum value wa[r] ...
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Degradation of GaN High Electron Mobility Transistors under high-power and high-temperature stress
... By using the outer loop data (both after long detrapping and short detrapping) or the inner loop data, we will be able to extract the activation energy for the ra[r] ...
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Smart Mobility for All: A Global Federated Market for Mobility-as-a-Service Operators
... Index Terms—Mobility as a Service, Microservices, Federated Platforms F 1 I NTRODUCTION Issues of Multi-modal Travelling: Multi-modal travelling is a common phenomenon. Commuters, tourists, and travel- ling ...
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Progress Towards Laser Plasma Electron Based Free Electron Laser on COXINEL
... Figure 3: Undulator spectral flux measured with the Horiba iHR 320 spectrometer at 5 mm gap ( 3 mm electron slit). The radiation from the 2 m long 107 x 18.16 mm periods U18 is then characterized while applying an ...
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Electron irradiation of nuclear graphite studied by transmission electron microscopy and electron energy loss spectroscopy
... of 20 eV [30]. The value of displacement threshold energy has not yet been agreed upon within the literature, with values ranging from 15 – 30 eV, resulting in a significant variation in σ d and the resultant dose ...
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