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Correlated electro-optical and structural study of electrically tunable nanowire quantum dot emitters

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Academic year: 2021

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Figure 1. (a) Simplified schematic of the nanowire structure with the AlN/GaN/AlN insertion
Figure 3. (a) I-V curve of NW1 in the dark and under ultraviolet illumination. (b) µPL spectra  obtained applying from −4.5 V to +5 V bias on NW1
Figure 4. (a) µPL peak energy vs. applied bias in NW1. A shift of 100 meV is observed when  varying the bias voltage from 0 to 4 V
Figure  5.  Calculation  of  the  conduction  (black)  and  valence  (red)  band  around  the  GaN  quantum dot, ground electron and hole levels in the dot, and their squared wavefunctions, for  (a-c) NW1 and (d-f) NW2

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