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Bias-Stress Effect in Pentacene Organic Thin-Film Transistors

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Academic year: 2021

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Fig. 2. Transfer characteristics after bias stress at V SG = 30 V and V SD = 1 V at varying stress times t
Fig. 4. ΔV versus stress V SG at t = 100 s. The V SD during stress was held at 1 V. Each stress condition was repeated three times, each time on a fresh device
TABLE II

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