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Low Temperature Solution-Processable 3D-Patterned Charge Recombination Layer for Organic Tandem Solar Cells

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Academic year: 2021

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Figure

Figure 1. Device structures used in this study, with relevant energy levels of the different layers
Figure 2. I-V characteristics of an Al (100 nm)/ZnO (400 nm)/Al (100 nm) electron-only diode device  with a ZnO thickness of 400 nm
Table 2. R PtoV value of ZnO films with different drying times and annealing temperatures (units in nm).
Figure 4. Current–voltage characteristics of the solar cells with different nano-patterned sizes of the  ZnO electron-collecting layer (ECL)
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