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Configurable Operational Amplifier Architectures Based on Oxide Resistive RAMs

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Academic year: 2021

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Figure

Figure 2. (a) I-V characteristic measured on HfO 2 -based devices [20] and corresponding simulation using a bipolar OxRAM physical model
Figure 3. (a) HRS resistance variation and (b) LRS resistance variation versus the number of pulse cycles
Table 1. CMOS operational amplifier parameters
Figure 5. (a) OxRAM-based inverting OpAmp (b) OxRAM-based inverting OpAmp with programming interface
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