Silicon etching in a pulsed HBr/O−2 plasma. I. Ion flux and energy analysis

The SiGe etch rates in the solutions were measured by quenching the etching reaction of nanowires at three to four different time-points and by imaging them with TEM to measure

A complete mass spectrum of Si cluster ions taken at a steady state pulsed- laser stimulated

TIME RESOLVED X-RAY ABSORPTION MEASUREMENTS ON PULSED LASER IRRADIATED THIN SILICON FOILS AND SILICON PLASMAS.. MURAKAMI and

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as a function of laser (Ruby and YAG) power density for amorphoùs silicon layers of various thicknesses... Measurement of the recrystallization by

Figure 5 - Liquid phase duration and melt-front velocity versus fluence.. The starting silicon temperature was 20°C except f o r one case for which we have simulated the effect

MELTING AND FREEZING KINETICS INDUCED BY PULSED ELECTRON BEAM ANNEALING IN ION-IMPLANTED SILICON.. La vitesse d e recristallisation depend principalement du gradient