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Scanning tunneling spectroscopy reveals a silicon dangling bond charge state transition

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Academic year: 2021

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Figure

Figure 1. (a) Schematic energy band diagram of the STM junction showing the tunneling mechanism through a single DB
Figure 2. (20 × 20)nm 2 constant current (30 pA)filled-state (a) and empty-state (b) STM images of a Si (100): H − 2 × 1 surface of a 1050 °C flashed sample
Figure 3. (a) (80 × 80)nm 2 constant current (40 pA) filled-state STM image at − 2.0 V
Figure 5. Series of (10 × 10)nm 2 STM images of a single DB in fi lled-state at (a) − 2.0 V , (b) − 1.7 V , (c) − 1.6 V and (d) − 1.5 V
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