• Aucun résultat trouvé

Luminescence at Defects in h-BN : Excitons at Stacking Faults and Single Photon Emitters

N/A
N/A
Protected

Academic year: 2021

Partager "Luminescence at Defects in h-BN : Excitons at Stacking Faults and Single Photon Emitters"

Copied!
131
0
0

Texte intégral

Références

Documents relatifs

The black filled circles are obtained with the cell containing water and the red non-filled circles represent the data for the empty cell.. The γ value was obtained

The excitonic dispersion has revealed the 312 presence of a direct exciton at a slightly higher energy, 313 responsible for the maximum of absorption in bulk h-BN.. (a)

PHOTOIONIZATION CROSS SEC- TION MEASUREMENT IN 5p AND 5s SUBSHELLS OF EXCITED BARIUM ATOMS BETWEEN 40 eV AND 140 eV PHOTON ENERGY... WUILLEUMIER and

The onset of interband transitions is thus determined and the Drude parameters of the conduction electrons are calculated The results are discussed in relation to the

So chromium in GaAs could have some properties comparable to chromium in the II-VI but also be close to chromium in silicon. Reminding that

[6, 49, 59,62, 64-65] These defocusing patterns giveinformation on both in-plane and out-of-plane dipole orientation, [62, 64-65] if it is taken into account that they

Si les points du QQ-plot sont sur une droite, il y a une parfaite correspondance entre les quantiles empiriques et th´ eoriques, ainsi la loi normale est une bonne approximation de

(1) QD-polymer structures with three different shapes (lines, squares, cubes); (2) The effect of quantum dots mass concentration on far field PL; (3) Refractive index