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Submitted on 1 Jan 1978

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NON-EQUILIBRIUM PHENOMENA IN

SUPERCONDUCTING MICROBRIDGES

J. Bindslev Hansen, P. Jespersen, P. Lindelof

To cite this version:

(2)

JOURNAL DE PHYSIQUE Colloque

C6, supplPment au no 8, Tome 39, aolit 1978, page

~ 6 - 5 2 0

NON-EQUILIBRIUM PHENOMENA IN SUPERCONDUCTING MICROBRIDGES

J. Bindslev Hansen, P. Jespersen and P.E. Lindelof

Physics Laboratory

I,

H.C. 0rsted Institute, University of Copenhagen, DK-2100 Copenhagen

0,

Denmark

Rgsum6.- Nos rdsultats expgrimentaux sur des microponts supraconducteurs de Sn, In and A1 indiquent

la n6cessit6 de tenir compte de la th6orie des effets de non-gquilibre, pour leur description.

Abstract.- Measurements on superconducting microbridges (Dayem bridges) in Sn, In and A1 show syste-

matic departures from existing theories which may point to ways of incorporating non-equilibrium ef-

fects into the description of these high current density Josephson devices.

A superconductor with a constriction smaller

than the coherence length exhibits the Josephson

effects. Such small structures are obtained using

clean point contacts or using thin-film technology.

We have used variable thickness thin-film micro-

bridges in our investigations.

The resistively shunted Josephson junction (RSJ)

model, incorporating a sinusoidal current-phase re-

lation I

=

I sin

d

is central to the understan-

S

0

ding of superconducting microbridges. Recently, so-

me attempts have been made to incorporate non-equi-

librium phenomena into such

a

two-fluid description.

In the behaviour of superconducting microbridges

three distinct features show up which with all pro-

bability are of such origin, namely the large excess

current (shoulder) at low voltages/l/, a saturation

of the microwave power of the Josephson radiation/2/,

and the subharmonic energy gap structure/3/.

We have previously reported measurements on

indium microbridges/4/ showing that, as the tempe-

Voltage (5pV I

Div)

rature is lowereh from Tc, both the excess current

and the microwave power first increases (the latter

as

(1

-

T/T~)')

and then saturates in the same tem-

perature region around a reduced temperature of

0.95.

Our variable thickness aluminium microbridges

exhibit the shoulder in the I-V characteristics.

The shoulder is positioned.at a lower voltage than

for bridges of tin and indium. The determination

of the shoulder in aluminium therefore presents a

special problem as it can easily be mixed up with

the effect of noise. Figure

1

shows a series of

I-V characteristics for one of our aluminium micro-

bridges.

As a measure of the position of the shoulder

along the voltage (frequency) axis we have taken the

Fig. I

:

Series of I-V characteristics for a varia-

ble thickness aluminium microbridge showing shoulder

Bridge parameters: length

X

width

=

0.2

X

0.2 ym2,

%

=

0.57

52,

dIc/dT

=

1.20

mA/K.

voltage, Vinfl., where d2v/d1'

= 0.

Figure 2 shows

a double logarithmic plot of this voltage versus

1

-

T/Tc. As seen,

varies as

(1

-

TITc)

112

'infl.

for bridges made of lead/5/, indium, ti.n and alumi-

nium. There is a clear difference in the position

of Vinfl. at a given temperature for the different

materials. This reflects probably the variation in

the inelastic relaxation time for the electrons,

which determines the characteristic times

tine^

.'

in the superconductor. However, the difference in

-cinel,

of four orders of magnitude between lead and

aluminium is not observed.

(3)

F i g . 2 : I n f l e c t i o n p o i n t v o l t a g e , V i n f l . v s . (l-T/ Tc) f o r a number of Pb, I n , Sn and A 1 m i c r o b r i d g e s .

A number of a t t e m p t s have been made t o e x p l a i n t h e s h o u l d e r a l l based on d i r e c t r e l a x a t i o n of t h e non-equilibrium i n t h e m i c r o b r i d g e and on d i f f u s i o n . E s p e c i a l l y t h e model s u g g e s t e d by Aslamazov and Larkin161 i s i n t e r e s t i n g a s i t i m p l i e s V a

i n f l. ( T ~ ~ ~ ~ ) - ~ . However, t h e model does n o t e x p l a i n t h e observed s a t u r a t i o n of t h e e m i t t e d microwave power.

The t h i r d f e a t u r e which we r e l a t e t o non-equi- l i b r i u m phenomena i s t h e subharmonic energy gap s t r u c t u r e , SHG, which a p p e a r s a s a s e r i e s of peaks i n t h e dynamic r e s i s t a n c e v e r s u s v o l t a g e c u r v e s . T h i s s t r u c t u r e i s presumably caused by p a i r b r e a k i n g due t o phonons c r e a t e d by r e l a x a t i o n of q u a s i p a r t i - c l e s t o t h e s i n g u l a r i t y i n t h e d e n s i t y of s t a t e . The e x c i t a t i o n of t h e q u a s i p a r t i c l e s can i n t u r n b e caused by Josephson r a d i a t i o n o r by q u a s i p a r t i c l e s c r o s s i n g t h e b r i d g e g i v i n g an image p i c t u r e of t h e d e n s i t y of q u a s i p a r t i c l e s on one s i d e of t h e b r i d g e a n energy eV h i g h e r on t h e o t h e r s i d e . The d e n s i t y of s t a t e on t h e two s i d e s of t h e b r i d g e i s modula- t e d by t h e o s c i l l a t i n g e l e c t r i c a l p o t e n t i a l on t h e two s i d e s .

We have found t h a t t h e SHG depends on t h e b r i d g e p r o p e r t i e s . T h i s i s i l l u s t r a t e d f o r aluminium i n f i g u r e s 3 and 4 which show c u r r e n t and dynamic r e s i s t a n c e v e r s u s v o l t a g e , and i n a d d i t i o n t h e vol-

VOLTAGE V IpVI

F i g . 3 : Aluminium m i c r o b r i d g e , same a s i n f i g u r e 1 . C u r r e n t and dynamic r e s i s t a n c e v s . v o l t a g e p l u s e n e r - gy gap determined from t h e v o l t a g e s of t h e peaks p l o t t e d v e r s u s v o l t a g e . The arrow i n d i c a t e s t h e BCS gap a t t h e same t e m p e r a t u r e .

11

J

1

I

-

4

voltage V [pvi Voltage V IpVI F i g . 4 : Aluminium m i c r o b r i d g e . Sane p l o t s a s i n f i - g u r e 3 . B r i d g e p a r a m e t e r s : l e n g t h x width = 0.3 x 0.5 pm2, RN=0.025

R,

dIc/dT = 28.6 mA/K.

t a g e dependence of t h e energy gap a s found from t h e p o s i t i o n of t h e peaks i n t h e dynamic r e s i s t a n c e . Bridges w i t h s m a l l c r i t i c a l c u r r e n t s ( a s i n f i g u r e

(4)

at finite voltage values'

.

In contrast, for bridges with large critical currents (figure 4) we see a general depression of the energy gap as we increase the current. The gap reduction stems from depairing caused by the large quasiparticle current and from heating effects.

ACKNOWLEDGEMENT.- We are indebted to Ole Eg for pre- paration of our microbridges.

References

/l/ Hbjgaard Jensen,H. and Lindelof,P.E., J. Low Temp. Phys.

3

(1976) 469

/2/ Sbrensen,O.H., Mygind,J., Pedersen,N.F., Guban- kov,V.N., Levinsen,M.T. and Lindelof,P.E., 3. Appl. Phys.

48

(1977) 5372

/3/ Gregers-Hansen,P.E., Hendricks,E., Levinsen,M.T. and Pickett,G.R., Phys. Rev. Lett.

2

(1973) 524 /4/ Lindelof,P.E., Hansen,J.B., Jespersen,P., Proc.

of Conf. on Future Trends in Superconductive Electronics, University of Virginia, Charlottes- ville 23-25 March 1978

/5/ Yeh,J.T.C. and Buhrman,R.A., J. Appl. Phys.

48

(1977) 5360

/6/ As1amazov.L.G. and Larkin.A.1.. Zh. EXD. Teor. Fiz. 70 (i976) 1340 (sov.'phys:

JETP

'J

(1976) 698)

-

/7/ Bindslev Hansen,J., Lindelof,P.E. and Pickett, G.R., In preparation.

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