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Submitted on 1 Jan 1978
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NON-EQUILIBRIUM PHENOMENA IN
SUPERCONDUCTING MICROBRIDGES
J. Bindslev Hansen, P. Jespersen, P. Lindelof
To cite this version:
JOURNAL DE PHYSIQUE Colloque
C6, supplPment au no 8, Tome 39, aolit 1978, page
~ 6 - 5 2 0
NON-EQUILIBRIUM PHENOMENA IN SUPERCONDUCTING MICROBRIDGES
J. Bindslev Hansen, P. Jespersen and P.E. Lindelof
Physics Laboratory
I,
H.C. 0rsted Institute, University of Copenhagen, DK-2100 Copenhagen
0,
Denmark
Rgsum6.- Nos rdsultats expgrimentaux sur des microponts supraconducteurs de Sn, In and A1 indiquent
la n6cessit6 de tenir compte de la th6orie des effets de non-gquilibre, pour leur description.
Abstract.- Measurements on superconducting microbridges (Dayem bridges) in Sn, In and A1 show syste-
matic departures from existing theories which may point to ways of incorporating non-equilibrium ef-
fects into the description of these high current density Josephson devices.
A superconductor with a constriction smaller
than the coherence length exhibits the Josephson
effects. Such small structures are obtained using
clean point contacts or using thin-film technology.
We have used variable thickness thin-film micro-
bridges in our investigations.
The resistively shunted Josephson junction (RSJ)
model, incorporating a sinusoidal current-phase re-
lation I
=I sin
d
is central to the understan-
S
0
ding of superconducting microbridges. Recently, so-
me attempts have been made to incorporate non-equi-
librium phenomena into such
atwo-fluid description.
In the behaviour of superconducting microbridges
three distinct features show up which with all pro-
bability are of such origin, namely the large excess
current (shoulder) at low voltages/l/, a saturation
of the microwave power of the Josephson radiation/2/,
and the subharmonic energy gap structure/3/.
We have previously reported measurements on
indium microbridges/4/ showing that, as the tempe-
Voltage (5pV I
Div)
rature is lowereh from Tc, both the excess current
and the microwave power first increases (the latter
as
(1-
T/T~)')
and then saturates in the same tem-
perature region around a reduced temperature of
0.95.
Our variable thickness aluminium microbridges
exhibit the shoulder in the I-V characteristics.
The shoulder is positioned.at a lower voltage than
for bridges of tin and indium. The determination
of the shoulder in aluminium therefore presents a
special problem as it can easily be mixed up with
the effect of noise. Figure
1shows a series of
I-V characteristics for one of our aluminium micro-
bridges.
As a measure of the position of the shoulder
along the voltage (frequency) axis we have taken the
Fig. I
:Series of I-V characteristics for a varia-
ble thickness aluminium microbridge showing shoulder
Bridge parameters: length
Xwidth
=0.2
X0.2 ym2,
%
=0.57
52,dIc/dT
=1.20
mA/K.voltage, Vinfl., where d2v/d1'
= 0.Figure 2 shows
a double logarithmic plot of this voltage versus
1
-
T/Tc. As seen,
varies as
(1-
TITc)
112
'infl.
for bridges made of lead/5/, indium, ti.n and alumi-
nium. There is a clear difference in the position
of Vinfl. at a given temperature for the different
materials. This reflects probably the variation in
the inelastic relaxation time for the electrons,
which determines the characteristic times
tine^
.'
in the superconductor. However, the difference in
-cinel,
of four orders of magnitude between lead and
aluminium is not observed.
F i g . 2 : I n f l e c t i o n p o i n t v o l t a g e , V i n f l . v s . (l-T/ Tc) f o r a number of Pb, I n , Sn and A 1 m i c r o b r i d g e s .
A number of a t t e m p t s have been made t o e x p l a i n t h e s h o u l d e r a l l based on d i r e c t r e l a x a t i o n of t h e non-equilibrium i n t h e m i c r o b r i d g e and on d i f f u s i o n . E s p e c i a l l y t h e model s u g g e s t e d by Aslamazov and Larkin161 i s i n t e r e s t i n g a s i t i m p l i e s V a
i n f l. ( T ~ ~ ~ ~ ) - ~ . However, t h e model does n o t e x p l a i n t h e observed s a t u r a t i o n of t h e e m i t t e d microwave power.
The t h i r d f e a t u r e which we r e l a t e t o non-equi- l i b r i u m phenomena i s t h e subharmonic energy gap s t r u c t u r e , SHG, which a p p e a r s a s a s e r i e s of peaks i n t h e dynamic r e s i s t a n c e v e r s u s v o l t a g e c u r v e s . T h i s s t r u c t u r e i s presumably caused by p a i r b r e a k i n g due t o phonons c r e a t e d by r e l a x a t i o n of q u a s i p a r t i - c l e s t o t h e s i n g u l a r i t y i n t h e d e n s i t y of s t a t e . The e x c i t a t i o n of t h e q u a s i p a r t i c l e s can i n t u r n b e caused by Josephson r a d i a t i o n o r by q u a s i p a r t i c l e s c r o s s i n g t h e b r i d g e g i v i n g an image p i c t u r e of t h e d e n s i t y of q u a s i p a r t i c l e s on one s i d e of t h e b r i d g e a n energy eV h i g h e r on t h e o t h e r s i d e . The d e n s i t y of s t a t e on t h e two s i d e s of t h e b r i d g e i s modula- t e d by t h e o s c i l l a t i n g e l e c t r i c a l p o t e n t i a l on t h e two s i d e s .
We have found t h a t t h e SHG depends on t h e b r i d g e p r o p e r t i e s . T h i s i s i l l u s t r a t e d f o r aluminium i n f i g u r e s 3 and 4 which show c u r r e n t and dynamic r e s i s t a n c e v e r s u s v o l t a g e , and i n a d d i t i o n t h e vol-
VOLTAGE V IpVI
F i g . 3 : Aluminium m i c r o b r i d g e , same a s i n f i g u r e 1 . C u r r e n t and dynamic r e s i s t a n c e v s . v o l t a g e p l u s e n e r - gy gap determined from t h e v o l t a g e s of t h e peaks p l o t t e d v e r s u s v o l t a g e . The arrow i n d i c a t e s t h e BCS gap a t t h e same t e m p e r a t u r e .
11
J
1
I
-
4
voltage V [pvi Voltage V IpVI F i g . 4 : Aluminium m i c r o b r i d g e . Sane p l o t s a s i n f i - g u r e 3 . B r i d g e p a r a m e t e r s : l e n g t h x width = 0.3 x 0.5 pm2, RN=0.025R,
dIc/dT = 28.6 mA/K.t a g e dependence of t h e energy gap a s found from t h e p o s i t i o n of t h e peaks i n t h e dynamic r e s i s t a n c e . Bridges w i t h s m a l l c r i t i c a l c u r r e n t s ( a s i n f i g u r e
at finite voltage values'
.
In contrast, for bridges with large critical currents (figure 4) we see a general depression of the energy gap as we increase the current. The gap reduction stems from depairing caused by the large quasiparticle current and from heating effects.ACKNOWLEDGEMENT.- We are indebted to Ole Eg for pre- paration of our microbridges.
References
/l/ Hbjgaard Jensen,H. and Lindelof,P.E., J. Low Temp. Phys.
3
(1976) 469/2/ Sbrensen,O.H., Mygind,J., Pedersen,N.F., Guban- kov,V.N., Levinsen,M.T. and Lindelof,P.E., 3. Appl. Phys.
48
(1977) 5372/3/ Gregers-Hansen,P.E., Hendricks,E., Levinsen,M.T. and Pickett,G.R., Phys. Rev. Lett.
2
(1973) 524 /4/ Lindelof,P.E., Hansen,J.B., Jespersen,P., Proc.of Conf. on Future Trends in Superconductive Electronics, University of Virginia, Charlottes- ville 23-25 March 1978
/5/ Yeh,J.T.C. and Buhrman,R.A., J. Appl. Phys.
48
(1977) 5360/6/ As1amazov.L.G. and Larkin.A.1.. Zh. EXD. Teor. Fiz. 70 (i976) 1340 (sov.'phys:
JETP
'J
(1976) 698)-
/7/ Bindslev Hansen,J., Lindelof,P.E. and Pickett, G.R., In preparation.