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Enhancement mode HEMT using fluorine implantation below the channel

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Figure

Fig. 1. Geometrical and technological parameters used for the normally-on HEMT structure and the calibration of the TCAD simulations
Fig. 4. Comparison between the experimental transfer char- char-acteristics I d ( V gs ) obtained in reference [4] and the simulated ones using the calibrated simulator, for normally-on HEMT and HEMT with fluorine implanted in the barrier layer.
Figure 8 shows the variations of the threshold voltage with respect to the distance d between the AlGaN/GaN inter-face and the fluorine ions, for three different fluorine con-centrations
Fig. 10. Simulated I d ( V ds ) characteristics in the off-state, showing the off-state current and the breakdown voltage of the normally-on HEMT and the normally-off HEMT with fluorine implantation below the channel; both with x-mole fraction of 0.15.

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