InGaN/GaN Multiple Quantum Wells for Photovoltaics

The dependence of the InGaN/GaN SQW optical properties with the thickness of the InGaN UL suggests the following mechanism: SDs are incorporated if In atoms are present at the

It was reported that such gross indium-rich clusters may, in fact, be pure InN [11], and pure InN regions with a 1-3 nm size were reported in InGaN quantum wells grown by both

Abstract: In this work, the solar power conversion efficiency of InGaN/Si double junction tandem solar cells was investigated under 1-sun AM1.5 illumination, using realistic

To quantify the luminescence enhancement obtained with the metallic grating, two QW luminescence spectra were recorded and compared: one when the laser pumping spot was focused under

The authors have applied modulation spectroscopy to study intersubband (IS) and interband (IB) transitions in InGaN/AlInN multi quantum well (QW) structures with the QW width

At the few nanometre scale, the concept of indium clustering remains controversial, and for blue- and green-emitting quantum wells with indium contents up to about 25% there is

As the carrier concentration increases, the Ohmic contacts improve, but worse rectifying properties are obtained for Schottky contacts and no meaningful C-V measurements are