22FDX
®
Technologies for Ultra-Low Power IoT, RF
and mmWave Applications
Technologies 22FDX® pour les Applications très basse puissance IoT, RF
et Ondes Millimétriques
Jan Hoentschel1, Luca Pirro1, Rick Carter1, Manfred Horstmann1
1 Globalfoundries LLC Fab1, Wilschdorfer Landstrasse 101, 01109 Dresden, Jan.Hoentschel@globalfoundries.com
ABSTRACT. In this work we revisited the 22nm FDSOI technology for lowest power IoT, RF and mmWave applications. Ultra-low leakage and power devices are described, as part of the 22FDX® portfolio. Transistors performance is presented. N-FET (p-FET) drive current of 910μA/μm (856μA/μm) at 0.8V and 100pA/μm Ioff are reported fulfilling the requirements for ultra-low power and leakage design space. Excellent low noise is shown due to the suppressed RDF coming from the un-doped silicon channel. Superior fT and fmax have been measured on CMOS and LDMOS devices. 347GHz n-FET fT and 371GHz fmax were achieved on thin oxide CMOS devices. Simple PA circuit results are reported to highlight the benefit of 22FDX® technology for RF and mmWave applications. In conclusion, an outlook of the scalability as well as novel process integrations are discussed.
KEYWORDS. CMOS, FDSOI, analog, mixed-signal, RF, mmWave, ultra-low power, ultra-low leakage, RTS, LFN. 1. Introduction
Rising manufacturing costs and emerging applications require unparalleled energy efficiency and driving the need for new semiconductor device solutions [Pat 98]. An increase in the cost per die was observed with the introduction of 14/7nm FinFET technologies due to increased process complexity and mask count. Cost sensitive IoT and mobile applications drive new requirements such as increased integration, advanced power management and high RF/mmWave performance. Consequently, differentiated technologies have continually received and increased focus from the major design and foundry players [Pat 98].
The Fully Depleted Silicon-On-Insulator (FDSOI) transistor architecture has inherent electrostatic control benefits, very low mismatch capability and low parasitic capacitance, making it a powerful option to fulfil those requirements while keeping process costs and complexity low [Web 15, Maz 11]. 22FDX® technology is proven to be a versatile platform, able to co-integrate a wide spectrum of devices, addressing a variety of market segments including Mobile, IoT, analog and RF/mmWave [Car 16].
In this work we revisit the 22FDX® technology as a solid platform offer. A review of the integration process and core IoT FET performances is presented in section 2 and 3. Section 4 highlights the differentiation of the 22FDX® technology. Ultra-low leakage and power devices are discussed in section 4.1 followed by a summary of low frequency noise performance (sec. 4.2). RF and mmWave results, which are obtained on single device and circuit are discussed in sections 4.3 - 4.5. In conclusion, section 5 gives an outlook on how new integration schemes will extend the 22nm FDSOI platform technology in the future.
2. Process Integration
The 22FDX® technology leverages about 75% of the 28nm bulk technology processes enabling a high yield capability [Car 16]. Maximum die scaling is achieved compared to 28nm bulk technologies with the use of double-patterning steps in the Mid/Back-End-of-Line leading to an optimum trade-off
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