Gate and drain low frequency noise of ALGaN/GaN HEMTs featuring high and low gate leakage currents

The agreement between the serial di fferentiated codes and the parallel counterparts validates the MPI transformations to JAGUAR, the migration to AMPI and the di fferentiation

OR (and 95% confidence interval) adjusted for maternal age, parity, nationality, educational level, marital status, employment during pregnancy, body-mass index before

The study of the pulsed drain current or noise characteristics in AlGaN/GaN HEMTs is the key of knowledge for designing the power amplifiers, the low noise amplifiers and

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Exprimer le gain en tension de l'étage grille commune v o /v i2 et sa résistance d'entrée R i2 en fonction de g m2 , χ et R ( en considèrera r 02 la résistance de sortie de Mn2

In this paper we show that using a DC current source with both high output impedance value and moderate low frequency noise level in a four-probe configuration allows to

Since high-k dielectrics have been introduced to avoid the gate leakage current in very thin silicon dioxide layers, the LF noise of these devices has been investigated

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