• Aucun résultat trouvé

Behaviour of dislocations near phaseboundaries in the anisotropiclinear elasticity theory

N/A
N/A
Info
Télécharger
Protected

Academic year: 2021

Partager "Behaviour of dislocations near phaseboundaries in the anisotropiclinear elasticity theory"

Copied!
1
0
0

Chargement.... (Voir le texte intégral maintenant)

Texte intégral

(1)

7th African Conference on Non Destructive Testing ACNDT 2016 & the 5th International Conference on NDT and Materials Industry and Alloys (IC-WNDT-MI)

2016

Behaviour of dislocations near phaseboundaries in the anisotropiclinear elasticity theory

A.Ouchtati, O.Khalfallah

Abstract : The image force undergone by amatrix dislocations close and parallel to aninterphase boundary is studied in Ag-X bicrystalswith X : Pb, Cu and Ni for disorientations rangingbetween 0° and 90°. The elastic energy of dislocationboundaryinteraction is calculated within theframework of anisotropic linear elasticity. It isrelated to the difference of the two metals shearmoduli. It is about a few hundred pico Joule permeter. The image force can be repulsive or attractiveaccording to the sign and the intensity of shearmoduli difference. The isoenergy maps have varioussymmetries according to the disorientation.

Keywords : nterphase Boundary, Dislocation, Elastic Interaction, Image Force, Anisotropic elasticity, CFC Structure.

Centre de Recherche en Technologies Industrielles - CRTI - www.crti.dz

Powered by TCPDF (www.tcpdf.org)

Références

Télécharger maintenant ( PDF - 1 Page - 7.72 KB )

Documents relatifs

X-RAY AND SCANNING CATHODOLUMINESCENCE IMAGING OF SMALL-ANGLE GRAIN BOUNDARIES AND DISLOCATIONS IN CdTe CRYSTALS

Abstract - By employing the Reflection X-ray Topography (RXT), on one hand, and the cathodoluminescence (CL-IR) mode of operation of the Scanning Electron Microscope, on the

DETERMINATION OF SLIP PLANES IN CdxHg(1-x)Te BY ETCHING OF DISLOCATIONS INTRODUCED BY MICROHARDNESS INDENTATIONS

L’archive ouverte pluridisciplinaire HAL, est destinée au dépôt et à la diffusion de documents scientifiques de niveau recherche, publiés ou non, émanant des

INFLUENCE OF DISLOCATIONS ON THE HALL EFFECT IN SILICON AND GERMANIUM

L’archive ouverte pluridisciplinaire HAL, est destinée au dépôt et à la diffusion de documents scientifiques de niveau recherche, publiés ou non, émanant des

DISLOCATIONS IN SEMICONDUCTORS AS STUDIED BY WEAK-BEAM ELECTRON MICROSCOPY

L’archive ouverte pluridisciplinaire HAL, est destinée au dépôt et à la diffusion de documents scientifiques de niveau recherche, publiés ou non, émanant des

ELECTRICAL RECOMBINATION BEHAVIOUR AT DISLOCATIONS IN GALLIUM PHOSPHIDE AND SILICON

L’archive ouverte pluridisciplinaire HAL, est destinée au dépôt et à la diffusion de documents scientifiques de niveau recherche, publiés ou non, émanant des

DISLOCATIONS ET PROCESSUS DE TRANSPORTDISLOCATIONS AND SLIP IN THE NaCl-STRUCTURE

using a variational method. The following contribu- tions to tlie interaction potential between atom rows parallel to the dislocation line are considered : ci)

THE COINCIDENCE SITE LATTICE (CSL) AND GRAIN BOUNDARY (DSC) DISLOCATIONS FOR THE HEXAGONAL LATTICE

Although the number of possible values of 2 for a hexagonal lattice is similar to that for a cubic lattice, the lower symmetry of hexagonal lattice leads to

INVESTIGATION OF EXTRINSIC GRAIN BOUNDARY DISLOCATIONS IN COPPER

It is interesting to note that a similar reaction does not occur at point C (Fig. It can be suggested that the process responsible for reaction is rather