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Fast atom interaction with surfaces at grazing incidence:
classical and quantum scattering applied to thin film growth
E Staicu Casagrande, A Momeni, H Khemliche
To cite this version:
E Staicu Casagrande, A Momeni, H Khemliche. Fast atom interaction with surfaces at grazing inci- dence: classical and quantum scattering applied to thin film growth. 31st International Conference on Photonic, Electronic and Atomic Collisions (ICPEAC XXXI), Jul 2019, Deauville, France. pp.202010,
�10.1088/1742-6596/1412/20/202010�. �hal-03093806�
Journal of Physics: Conference Series
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Fast atom interaction with surfaces at grazing incidence: classical and quantum scattering applied to thin film growth
To cite this article: E M Staicu Casagrande et al 2020 J. Phys.: Conf. Ser. 1412 202010
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ICPEAC2019
Journal of Physics: Conference Series 1412 (2020) 202010
IOP Publishing doi:10.1088/1742-6596/1412/20/202010
1
Fast atom interaction with surfaces at grazing incidence: classical and quantum scattering applied to thin film growth
E M Staicu Casagrande
1, A Momeni
1and H Khemliche
1*1Institut des Sciences Moléculaires d’Orsay, CNRS, Univ. Paris-Sud, Université Paris-Saclay, Bât.520, Université Paris-Sud, F-91405 Orsay cedex, France
Synopsis Characterization of solid surfaces with heavy particles has mainly relied on the use of ions at ener- gies from keV to MeV. Although atomic diffraction at thermal energies has been known since 1930 and became popular in the 1970’s as a powerful surface characterization technique, it is nowadays rather confidential. Unex- pectedly, diffraction with atoms in the keV range has also been observed despite the tininess of the de Broglie wavelength. Grazing Incidence Fast Atom Diffraction (GIFAD) has now become mature and allows the real- time analysis, during the growth, of the most fragile layers.
Particle-surface interactions play a key role in nanoscience and nanotechnology. One of the current challenge consists in engineering, with atomic level control, nanostructures with specif- ic electronic, chemical or magnetic properties for applications in optoelectronics, sensing, or spintronics. Due to their large interaction cross- section, ions in the keV energy range have proven efficient for fine etching and character- izing solid surfaces. Yet, these charged particles are not well suited for a large class of promising but extremely fragile materials, such as organic layers.
One alternative solution for probing the outermost surface layer of these materials, is to use atoms instead of ions. In particular, when He atoms in the energy range 0.2-1 keV are scattered at grazing incidence, they provide a wealth of information on both structural and electronic properties without any damage. In addition, this analysis can be performed in real- time during film growth, thus revealing organi- zation modes, phase transitions and dynamical structural properties.
In this context, we have developed a new technique, called GIFAD for Grazing Incidence Fast Atom Diffraction [1]. GIFAD relies on scattering of ∼1 keV He atoms at grazing inci- dence angles near 1°. The scattered particles are collected on a position sensitive detector. For well-organized surfaces, coherent scattering yields diffraction patterns that bear sensitive information on crystallographic properties as well on the electronic corrugation.
Among the many examples that demonstrate the GIFAD capabilities, a recent work on the growth of a monolayer perylene (C
20H
12) on Ag(110) reveal an unexpected and complex or- ganization dynamics [2]. In particular, crystalli- zation of the first layer into a very dense pack- ing occurs quasi-instantaneously at a critical coverage reached by molecule incorporation from the second layer. Following this transition, the diffraction pattern is clearly resolved, indi- cating a long rang order in the crystalline mono- layer.
Figure 1. Evolution of the GIFAD reflectivity during deposition of perylene on Ag(110), with the evolution of the diffraction pattern.
References
[1] Khemliche H et al 2009 Appl. Phys. Lett. 95 151901
[2] Momeni A et al 2018 J. Phys. Chem. Lett.
9 908
* E-mail: [email protected]