• Aucun résultat trouvé

TwTwo-dimensional Modelling and SimulationofCIGS thin-film solar cell

N/A
N/A
Protected

Academic year: 2021

Partager "TwTwo-dimensional Modelling and SimulationofCIGS thin-film solar cell"

Copied!
1
0
0

Texte intégral

(1)

Second International Conference on New Materials and Active Devices Deuxième Congrès International sur les Nouveaux Matériaux et les Composants Actifs

2014

TwTwo-dimensional Modelling and Simulationof CIGS thin-film solar cell

H. Amar, S.Tobbeche, a

Abstract : Abstract: 2 D Silvaco Atlas software is used for the study of a CIGS thin film solar cell in the configuration:ZnO(200 nm)/n-type CdS(50 nm)/ p-type CIGS(350 nm)/Mo. The cell performance is evaluated by implementing thedefects created at the grain boundaries of the polycrystalline CdS and CIGS ma terial and at the interface CdS/CIGS. TheJ-V characteristics and the external quantum efficiency EQE are simulated under AM 1.5 illumination. The conversionefficiency ? of 20.35 % is reached and the other characteristic parameters are simulated: the short circuit current density Jscequals 35.62 mA/cm2, the open circuit voltage Voc is of 0.69 V and the fill factor FF is of 82.7 %. The calculated externalparameters of the solar cell are in good agreement with the measured characteristics. The simulation results also showedthat the rise of the CdS thickness decreases all output parameters and the external quantum efficiency while the rise of theCIGS thickness improves all photovoltaic parameters and the external quantum efficiency. The highest efficiency of21.08 % is reached for the CIGS thickness of 5 ?m.

Keywords : Computer modeling, Silvaco Atlas, CIGS solar cell, solar cell parameters.

Centre de Recherche en Technologies Industrielles - CRTI - www.crti.dz

Powered by TCPDF (www.tcpdf.org)

Références

Documents relatifs

The influence of the density N~~, and recombination activity S~ of dislocations on the short circuit current density J~~, open circuit voltage V~~, fill factor FF, and efficiency 1~

Comparison between TCAD simulated and measured carrier lifetime in CMOS photodiodes, using the Open Circuit Voltage Decay

L’archive ouverte pluridisciplinaire HAL, est destinée au dépôt et à la diffusion de documents scientifiques de niveau recherche, publiés ou non, émanant des

energy, by a photovoltaic generator system. These cells are placed in series for objective to increasing the generator voltage, and in parallel to increasing the

power of a PV generator decreases proportional to the number of the defective diodes. Because, this fault can affects the group voltage. But, the current remains independent

Electrical accidents create malfunctions in the photovoltaic generator, and they make a remarkable degradation in its productivity. During this time, the system is incompatible,

Dependence of the open-circuit voltage (V oc ) of two silane concentration series of nip-type solar cells, as well as of various other nip- and pin-type mc-Si:H solar cells on

1 共 b 兲兴. By comparison with our TEM micrograph of the same cell 关 cf. The lateral size of the con- glomerates, as evaluated from the power spectrum of the Fourier transform of