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Ultra-low-threshold continuous-wave and pulsed lasing in tensile-strained GeSn alloys

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Academic year: 2021

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Figure 1. Structural and optical characterization.(a) X-Ray diffraction reciprocal space map for quantitative assessment of the layer strain (−0.32 %)
Figure 2. CW lasing from GeSn. (a) Emission spectra measured at 25 K for the 9 µm diameter disk under various cw excitation levels
Figure 3. Carrier density at threshold and net gain (a) PL spectra below threshold, taken at 25 K under cw pumping of 0.2 mW, 0.4 mW and 0.8 mW
Figure 4. Pulsed laser. a Temperature dependence of light emission of a 9 µm diameter disk under pulsed peak power excitation of 11 mW

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