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A note on wetting transition for gradient fields

CAPUTO, P., VELENIK, Yvan

Abstract

We prove existence of a wetting transition for two classes of gradient fields which include: (1) The Continuous SOS model in any dimension and (2) The massless Gaussian model in dimension 2. Combined with a recent result proving the absence of such a transition for Gaussian models above 2 dimensions (Bolthausen et al., 2000.) J. Math. Phys. to appear), this shows in particular that absolute-value and quadratic interactions can give rise to completely different behavior.

CAPUTO, P., VELENIK, Yvan. A note on wetting transition for gradient fields.

Stochastic Processes and Their Applications

, 2000, vol. 87, no. 1, p. 107-113

DOI : 10.1016/S0304-4149(99)00113-1

Available at:

http://archive-ouverte.unige.ch/unige:6392

Disclaimer: layout of this document may differ from the published version.

1 / 1

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P. CAPUTO AND Y. VELENIK

Abstract. We prove existence of a wetting transition for two classes of gradient fields which include: 1) The Continuous SOS model in any dimension and 2) The Massless Gaussian model in dimension 2. Combined with a recent result proving the absence of such a transition for Gaussian models above 2 dimensions [5], this shows in particular that absolute-value and quadratic interactions can give rise to completely different behavior.

Keywords: Gradient models, entropic repulsion, pinning, wetting transition.

1. Introduction

In several recent papers [3, 10, 2, 5, 1], the question has been raised whether the 2 dimensional massless Gaussian model exhibits a wetting transition. It is well-known that the Gaussian field in 2D is delocalized, with a logarithmically divergent variance, but that the introduction of an arbitrarily weak self-potential favoring height 0 is enough to localize it, in the sense that the variance remains finite [11, 2]; this result has recently been extended to a class of non Gaussian models in a stronger form, showing in particular existence of exponential moments for the heights [10] and exponential decay of covariances [12]. In higher dimensions, the field is already localized without pinning potential, but the introduction of such a potential turns the algebraic decay of the covariances into an exponential one. On the other hand, a Gaussian field with a positivity constraint (“surface above a hard-wall”) exhibits entropic repulsion: The average height diverges like logN in 2D [9] and √

logN in higher dimensions [4] (N being the linear size of the box). When both a positivity constraint and a pinning potential are present (“surface above an attractive hard wall”), there is a competition between these two effects. If there exists a (non zero) critical value for the strength of the pinning potential above which the interface is localized, but below which it is repelled by the wall, we say that the model exhibits a wetting transition. That such a transition occurs in a wide class of 1D model is well-known, see e.g. [7, 13, 5]. It was recently shown in [5] that the Gaussian model in dimensions 3 or higher does not display a wetting transition: The interface is always localized. The physically important case of the 2D model (describing a 2D interface in a 3D medium) remained however open.

In the present note, we prove that the 2D Gaussian field does exhibit a wetting transi- tion; in fact the proof applies to any strictly convex interaction, see below. We also prove that the continuous SOS model has such a transition inanydimension, thus showing that the choice of the interaction can greatly affect the physics of the system. Our proofs are based on a variant of a beautiful and simple argument of Chalker [8], who proved the existence of a wetting transition in the discrete SOS model in dimension 2.

Date: November 22, 2000.

Corresponding author; P. Caputo, Fachbereich Mathematik, Sekr. MA 7-4, TU-Berlin, Straße des 17.

Juni 136, D-10623 Berlin, Germany. Fax: 49-30-31421695. email: [email protected] 1

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2 P. CAPUTO AND Y. VELENIK

2. Results

We consider a class of gradient models with single spin-spaceR+, i.e. modeling surfaces above a hard wall. Let ΛN be the cube of side N centered at the origin, and Ψ :R→R an even function to be specified later; we consider the following Hamiltonian

HN0,a,b(φ) =H0,N0 (φ) +VNa,b(φ), where

H0,N0 (φ) = X

hx,yi⊂ΛN

Ψ(φx−φy) + X

hx,yi x∈ΛN, y /∈ΛN

Ψ(φx),

VNa,b(φ) =−b X

xΛN

1x6a}, a, b >0,

(hx, yi denotes a pair of nearest neighbour sites). The corresponding Gibbs measure (on (R+)ΛN) is then given by

µ0,+,a,bN ( dφ) = e−HN0,a,b(φ) ZN0,+,a,b

Y

x∈ΛN

x.

As in the pure pinning problem (i.e. without a wall) [10], the relevant parameter is ε(a, b) =aeb and not bothaandbseparately. As usual, we introduce theδ-pinning limit, which is the model described by the measure

µ0,+,εN ( dφ) = lim

a0 ε(a,b)=ε

µ0,+,a,bN ( dφ) = eH00,N(φ) ZN0,+,ε

Y

x∈ΛN

( dφx+εδ0( dφx)). Note thatµ0,+,εN can be written more explicitly as

µ0,+,εN ( dφ) = X

A⊂ΛN

ε|A|ZΛ0,+

N\A

ZN0,+,ε µ0,+Λ

N\A( dφ), where

ZΛ0,+

N\A= Z

e−H0,N0 (φ) Y

x∈ΛN\A

xY

yA

δ0( dφy), and

µ0,+Λ

N\A( dφ) = (ZΛ0,+

N\A)−1e−H0,N0 (φ) Y

xΛN\A

x

Y

yA

δ0( dφy) is the Gibbs measure on ΛN \A with 0 boundary condition outside.

Remark: Here and everywhere else in this note, the integrals are restricted to the positive real axis, so we do not write this condition explicitly.

A quantity of interest is the density ofpinned sites, i.e. of those sites where the interface feels the effect of the pinning potential; it is defined as

ρN(a, b) =|ΛN|−1µ0,+,a,bNN(φ)), where νN(φ) = P

xΛN1x6a}. We also write ρ(a, b) = limN→∞ρN(a, b). The corre- sponding quantities in theδ-pinning limit are denotedρN(ε),ρ(ε) (measuring the density

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of sites exactly at height 0). ρ will play the role of an order parameter for the wetting transition.

Our results can then be stated as follows.

Theorem 2.1. Let Ψ(x) = |x|, d> 1. Suppose that aeb < (2d)−1, then there exist two constants C1(a, b, d) and C2(a, b, d) such that, for any M > C1Nd1,

µ0,+,a,bNN(φ)> M)6e−C2M.

In particular, ρ(a, b) = 0. The corresponding results also hold in the case of δ-pinning, provided ε <(2d)−1.

Theorem 2.2. Let Ψ(x) = 12x2, d= 2. There exists ε0 > 0 such that, for any ε < ε0 there exist two constants C3 and C4 depending onε such that, for any M > C3Nd−1,

µ0,+,εNN(φ)> M)6eC4M.

In particular, ρ(ε) = 0. The same also holds in the case of the square-well potential provided aeb is small enough.

We recall that it is not hard to prove that ρ > 0 when the pinning is strong. For example, in the δ-pinning case, we can proceed in the following way. Since

N|−1logZN0,+,ε ZN0,+,0 =

Z ε

0

1 ˆ

ερN(ˆε) dˆε ,

the result follows from ZN0,+,ε > εN| and the existence of a constant C such that ZN0,+,0 6 C|ΛN|. To prove the latter inequality one can consider a shortest self-avoiding path ω on Zd starting at some site of ∂ΛN and containing all the sites of ΛN, and use H0,N0 (φ)> P|ω|−1

n=1 Ψ(φωn−φωn+1).

The above results imply the existence of a wetting transition in these models1. Together with the result of [5] that in the Gaussian model in d>3 there is nowetting transition, Theorem 2.1 shows a radical difference of behavior between the Gaussian and the SOS interactions.

Remark: 1. It is not difficult to see, looking at the proofs, that our theorems remain true if we replace the SOS interaction Ψ(x) =|x|with any globally Lipschitz function (not necessarily symmetric), and the Gaussian interaction Ψ(x) = 12x2 with any even, convex Ψ such that 1/c>Ψ00(x)>c for somec >0 and allx.

2. Even though the present work provides a proof of the wetting transition in the models considered, several important issues remain completely open. In particular, it would be most desirable to have a pathwise description of the field in both the localized and repelled regimes, i.e. a proof that ρ > 0 implies finiteness of the mean height of any fixed spin in the thermodynamic limit (if possible with estimate on the tail and exponential decay of correlations), and a proof that ρ = 0 implies that the mean height of any fixed spin diverges (if possible with estimates on the rate). Another question of physical interest would be to determine how the field delocalizes as the pinning strength decreases to its critical value.

1In theδ-pinning case, it can easily be seen thatρis monotonous inε, so that there is a single critical value.

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4 P. CAPUTO AND Y. VELENIK

Acknowledgments. We thank Dima Ioffe and Ofer Zeitouni for their comments and interest in this work. We also thank the referee for useful remarks. YV was supported by DFG grant De 663/2-1.

3. Proof of Theorem 2.1

We first consider the square-well potential. Let M >0; following [8], we introduce the set BM ={φ : νN(φ)>M}, and the set

CM ={φ : X

xΛN

1x62a} >M}.

Since BM ⊂ CM, the first claim immediately follows from the estimate on conditional probabilities

µ0,+,a,bN (BM|CM)6e−C2M, M > C1Nd−1. (3.1) Moreover, ρ(a, b) = 0 will follow from this and the obvious bound

ρN 6 M

Nd0,+,a,bN (BM), by choosingM such thatNdM Nd−1.

We turn to the proof of (3.1). We define a mapT fromCM ontoBM by (Tφ)x =

(

φx ifφx6a , φx−a otherwise.

If we writeeVNa,b = 1x>a}+eb1x6a} and expand the corresponding products, we have µ0,+,a,bN (CM) =

Z e−HN0,a,b(φ)

ZN0,+,a,b 1{φ∈CM} Y

x∈ΛN

x (3.2)

= X

A⊂ΛN

|A|>M

X

B⊂A

eb|B|

Z e−H00,N(φ) ZN0,+,a,b

Y

x∈B

1x6a}x Y

y∈A\B

1{a<φy62a}y Y

z∈ΛN\A

1{2a<φz}z.

Now, observe that

H0,N0 (φ)6H0,N0 (Tφ) +da|∂ΛN|+ 2da|B| (3.3) (∂ΛN being the set of x∈ΛN neighbouring a site y /∈ΛN). After the change of variables φex= (Tφ)x, we have

µ0,+,a,bN (CM)

>e−da|∂ΛN| X

A⊂ΛN

|A|>M

X

B⊂A

e−2daeb

|B|Z

e−H0,N0 (eφ) ZN0,+,a,b

Y

x∈A

1{φe

x6a}dφex

Y

yΛN\A

1{a<φe

y}dφey

=e−da|∂ΛN| X

AΛN

|A|>M

eb|A|

e−2da+e−b|A|Z e−H0,N0 (φ)e ZN0,+,a,b

Y

xA

1{

φex6a}dφex Y

yΛN\A

1{a<

φey}dφey

>eda|∂ΛN|

e2da+ebM

µ0,+,a,bN (BM),

where we used e2da+eb >1, which follows from aeb <(2d)1. This proves (3.1).

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Let us now consider the case of the δ-pinning potential. The proof is very similar. Let M >0, and defineBM as in the previous case (but remember that nowνN is the number of sites with height equal to 0). We also need a set analogous to the set CM above: Let

∆≡(2d)−1−ε; we set

DM ={φ : X

xΛN

1x6∆} >M}. We are going to show that

µ0,+,εN (BM|DM)6e−C4M, M > C3Nd−1. (3.4) As above, (3.4) is sufficient to prove our claims.

To prove (3.4) define the map (Sφ)x=

x−∆ ifφx >∆

0 otherwise

from DM onto BM. Note that µ0,+,εN (DM) can be written X

AΛN

|A|>M

X

BA

ε|B|

Z e−H0,N0 (φ) ZN0,+,ε

Y

x∈A\B

1x6∆}x Y

y∈ΛN\A

1{∆<φy}y Y

zB

δ0( dφz). (3.5)

We have

H0,N0 (φ)6H0,N0 (Sφ) + ∆d|∂ΛN|+ ∆2d|A|,

and therefore, letting φex= (Sφ)x and integrating over the variablesφx,x∈A\B, µ0,+,εN (DM)>e−∆d|∂ΛN| X

A⊂ΛN

|A|>M

X

B⊂A

e−∆2d|A||A|−|B|ε|B|

Z e−H0,N0 (eφ) ZN0,+,ε

Y

xΛN\A

dφex

Y

y∈A

δ0( dφey)

=e∆d|∂ΛN| X

A⊂ΛN

|A|>M

ε|A|e∆2d|A|

1 +∆ ε

|A|ZΛ0,+

N\A

ZN0,+,ε

>e−∆d|∂ΛN| e−∆2d(1 +∆ ε)M

µ0,+,εN (BM), where we used e−∆2d(1 +ε)>1. This proves (3.4).

4. Proof of Theorem 2.2

We start with theδ-pinning potential. We proceed as in the corresponding proof of the previous section up to equation (3.5). To simplify notations, here we set ∆ = 1. Writing W =A∪ΛNc, we have the estimate

H0,N0 (φ)6H0,N0 (Sφ) + 2|∂ΛN|+ 8|A|+ 2 X

x∂W

X

y /∈W yx

(Sφ)y. (4.6)

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6 P. CAPUTO AND Y. VELENIK

Let us use the short-hand notationX(φ) = 2P

x∈∂W

P

y /∈W, y∼xφy. Inserting this estimate in (3.5) and changing variables to φex= (Sφ)x, we obtain

µ0,+,εN (DM)>e2|∂ΛN| X

A⊂ΛN

|A|>M

ε|A|(e8(1 +1

ε))|A| ZΛ0,+

N\A

ZN0,+,ε µ0,+Λ

N\A

e−X(φ) .

Since Jensen’s inequality implies that µ0,+Λ

N\A

e−X(φ)

>e−µ

0,+

ΛN\A(X(φ))

, the conclusion will follow as before, once we prove that

µ0,+Λ

N\A(X(φ))6c1|∂W|6c1(|∂ΛN|+|A|),

withc1a finite independent constant. However, this follows immediately from the existence of the infinite-volume repulsed field pinned at the origin, which was established in [11]

(Lemma 2.1). Notice that it is not the case in higher dimensions, and therefore the argument does not apply. In fact, as was proved in [5], there is no wetting transition in this case.

Let us finally discuss the square-well case. Again we adapt the proof given in the previous section. Consider the expression (3.2). Now the estimate (3.3) must be replaced by the analogous of (4.6) for the square well potential. In particular we are led to prove an upper bound for

µ0,+Λ

N

Xe(φ)

φx6a,∀x∈A;φy > a, ∀y /∈A , where Xe(φ) = 2aP

x∂fW

P

y /W , yf xφy,Wf =B∪ΛNc, for fixedB ⊂A⊂ΛN. However, FKG inequality implies that this expectation increases if one raises both the boundary conditions in ΛNc and the conditioning in Atoφx=a, and modify the wall constraint to φy >afor all y. Thus, after a last change of variables, we get

µ0,+Λ

N

Xe(φ)

φx 6a,∀x∈A;φy > a, ∀y /∈A

0,+Λ

N\A

Xe(φ+a)

,

and therefore - using |∂fW|6|∂ΛN|+|A|- the conclusion (3.1) follows as above.

References

[1] E. Bolthausen, Large deviations and interacting random walks and random surfaces, Lecture notes St-Flour 1999.

[2] E. Bolthausen, D. Brydges,Gaussian surface pinned by a weak potential, to appear in: State of the art in probability and statistics. IMS Lecture Notes, Ch. Klassen (ed.).

[3] E. Bolthausen, D. Ioffe,Harmonic crystal on the wall: A microscopic approach, Commun.Math.Phys.

187(1997), 567-582.

[4] E. Bolthausen, J.-D. Deuschel, O. Zeitouni, Entropic repulsion for the lattice free field, Com- mun.Math.Phys.170(1995), 417–443.

[5] E. Bolthausen, J.-D. Deuschel, O. Zeitouni, Absence of a wetting transition for lattice free fields in dimensions three and larger, to appear in J.Math.Phys., special issue on Probabilistic Methods in Statistical Physics, March 2000.

[6] J. Bricmont, A. El Mellouki, J. Fr¨ohlich, Random surfaces in statistical mechanics: Roughening, rounding, wetting, J.Stat.Phys.42(1986), 743–798.

[7] T.W. Burkhardt,Localisation-delocalisation transition in a solid-on-solid model with a pinning poten- tial, J.Phys.A: Math.Gen.14(1981), L63–L68.

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[8] J.T. Chalker,The pinning of an interface by a planar defect, J.Phys.A: Math.Gen.15(1982), L481–

L485.

[9] J.-D. Deuschel, G.B. Giacomin,Entropic repulsion for massless free fields, preprint (1999)

[10] J.-D. Deuschel, Y. Velenik, Non-Gaussian surface pinned by a weak potential, preprint (1998), to appear in Probab.Theory Relat.Fields.

[11] F. Dunlop, J. Magnen, V. Rivasseau, P. Roche, Pinning of an interface by a weak potential, J.Stat.Phys.66(1992), 71–98.

[12] D. Ioffe, Y. Velenik,A note on the decay of correlations underδ-pinning, preprint (1998), to appear in Probab.Theory Relat.Fields.

[13] J.M.J. van Leeuwen, H.J. Hilhorst, Pinning of a rough interface by an external potential, Physica 107A(1981), 319–329.

Fachbereich Mathematik, Sekr. MA 7-4, TU-Berlin, Straße des 17. Juni 136, D-10623 Berlin, Germany

E-mail address: [email protected] E-mail address: [email protected]

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