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Absence of boron aggregates in superconducting silicon confirmed by atom probe tomography

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Academic year: 2021

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Figure

FIG. 1. Reconstruction of a 60 60 200 nm 3 volume in heavily boron- boron-doped silicon epilayers analyzed by atom probe tomography
Fig. 1 shows a reconstruction of a 60 60 200 nm 3 tip volume, which represents a typical result of our APT measurements
FIG. 4. (a) Normalized differential conductances (dI/dV) of tunnel contacts on superconducting silicon at two different spatial positions (T sample ¼ 110 mK)

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