Acceptor energy levels in GaAs/AlGaAs quantum wells in the presence of an external magnetic field

Relaxation times are expected to depend strongly on the photon energy within the inhomogeneously broadened exciton line because of the spectral dependence of the

Although it is very tempting to extrapolate these results to the data of Latshaw, one has to be cautious as the experimental conditions are very different : the implantation

We have investigated temperature and magnetic field induced changes in the occupation of the r- and Gpoint minima of the conduction band of GaSb/AlSb quantum wells in the

For donors in realistic quantum wells (with finite barrier height), the impurity binding energy as a function of the well width is found to have a maximum at a critical width around

PHOTOLUMINESCENCE STUDIES OF n-TYPE MODULATION DOPED AlGaAs-GaAs MULTIPLE QUANTUM WELLS IN TILTED MAGNETIC

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The light and heavy hole masses, the relative band alignments of GaAs and AlGaAs and the quantum well width were treated as fitting parameters.. Figure 2 shows

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