N-TYPE DIFFERENTIAL NEGATIVE RESISTANCE, OPTICAL BISTABILITY AND AUTOMODULATION OF RADIATION IN SEMICONDUCTORS DUE TO ELECTROOPTICAL EFFECTS

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N-TYPE DIFFERENTIAL NEGATIVE RESISTANCE, OPTICAL BISTABILITY AND AUTOMODULATION

OF RADIATION IN SEMICONDUCTORS DUE TO ELECTROOPTICAL EFFECTS

B. Ryvkin

To cite this version:

B. Ryvkin. N-TYPE DIFFERENTIAL NEGATIVE RESISTANCE, OPTICAL BISTABIL- ITY AND AUTOMODULATION OF RADIATION IN SEMICONDUCTORS DUE TO ELEC- TROOPTICAL EFFECTS. Journal de Physique Colloques, 1988, 49 (C2), pp.C2-113-C2-114.

�10.1051/jphyscol:1988225�. �jpa-00227642�

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JOURNAL DE PHYSIQUE

Colloque C 2 , Supplbment au ne6, Tome 49, j u i n 1988

N-TYPE DIFFERENTISL NEGATIVE RESISTANCE, OPTICAL BISTABILITY AND AUTOMODULATION OF RADIATION IN SEMICONDUCTORS DUE TO ELECTROOPTICAL EFFECTS

B.S. RYVKIN

AF Ioffe P h y s i c o T e c h n i c a l I n s t i t u t e A c a d e m y of S c i e n c e s of the USSR, L e n i n g r a d , USSR

There a r e many p h y s i c a l mechanisms which g i v e r i s e t o

-

type c u r r e n t - v o l t a g e c h a r a c t e r i s t i c (CVC) i n semiconductore.

Of s p e c i a l i n t e r e s t is t h e p o s s i b i l i t y of o b t a i n i n g

N

^-type

CVC f o r p h o t o c u r r e n t of semiconductor p h o t o s e n s i t i v e element due t o t h e r e d u c t i o n i n t h e absorbed l i g h t power

( P )

when t h e a p p l i e d v o l t a g e

( V )

is increased. On t h e b a s i s of such e l e c t - r o o p t i c a l elements i t was p o s s i b l e t o f a b r i c a t e d e v i c e s (SEED) f o r o p t i c a l r a d i a t i o n c o n t r o l . The p r i n c i p l e of o b t a i n i n g

J'f -

type C V C - i n t h e SEED can be explained i n t h e f o l l o w i n g way. I n any p h o t o e l e c t r i c d e v i c e s photocurrent i s d e f i n e d by t h e con- c e n t r a t i o n of c a r r i e r s R c r e a t e d by l i g h t . This c o n c e n t r a t i o n is p r o p o r t i o n a l t o product : h- d.

P ,

where

d -

^isa b s o r p t i o n c o e f f i c i e n t of t h e SEED m a t e r i a l .

N

-type CVC may t a k e p l a c e i f any of t h e v a l u e s o( o r

P

d e c r e a s e when

v

grows. I n d c r e a s e of

V

^(i.e. e l e c t r i c f i e l d

E

i n s i d e t h e SEED) can a l t e r t h e r e f - r a c t i o n index or/and t h e a b s o r p t i o n c o e f f i c i e n t of t h e SEED m a t e r i a l . The change in t h e r e f r a c t i o n index may produce essen- t i a l change i n c o n c e n t r a t i o n vL i f t h e SEED i s made l i k e a Fab- ry-Perot r e s o n a t o r (FPR). I n t h i s c a s e continuous i n c r e a s e o r d e c r e a s e of t h e r e f a c t i o n index w i t h

E

causes continuous change i n t h e o p t i c a l l e n g t h of t h e FPR and, consequently, o s c i l l a - t i o n s of

P

i n s i d e t h e SEED. The r e d u c t i o n of

P

i n t h i s c a s e g i v e s r i s e t o -type CVC [I-31

.

For t h e photon energy fc0 c l o s e t o t h e energy gap

E

of t h e semiconductor t h e i n c r e a s i n g of

E

3

r e s u l t . in t h e i n c r e a s e of o(

,

^{i f}

h w c E ,

^and^mayr e s u l t in d e c r e a s e of ~4

,

^{i f}

elu)

s l i g h t l y exceeds

E

The growth o f d

3 '

Article published online by EDP Sciences and available at http://dx.doi.org/10.1051/jphyscol:1988225

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C2-114 JOURNAL DE PHYSIQUE

w i t h

E

i n t h e a c t i v e l a y e r of t h e r e s o n a t o r SEED can r e s u l t i n t h e r e d u c t i o n of n

,

^{i . e .}

S\r

-type CVC. This may occur because in the resonance region t h e i n c r e a s e i n a( results in a d r a s t i c drop i n t h e

P

i n s i d e t h e FPR, ao t h a t i n t h e product

P

t h i s r e d u c t i o n overcompensates t h e r i e e of t h e o( [2,31. On t h e o t h e r hand, r e d u c t i o n of w i t h

E

i n the narrow gap

1

-type l a y e r of t h e SEED made on t h e b a s i s of t h e d o u b l e p

- ⁱ -

^hetero-

s t r u c t u r e e n a b l e s u s t o o b t a i n N - t y p e CVC i n a s i a p l e and e l e - g a n t may [3-51. I n t h e l a t t e r case t h e SEED has no r e s o n a t o r and nonmonochromatic r a d i a t i o n can be used.

We have r e a l i z e d d i f f e r e n t type of the SEED [3-51. They operated i n b i s t a b l e , automodulation and u n i v i b r a t i o n regimes.

fn t h e r e s o n a t o r f r e e SEED the two l a t t e r regimes have been r e a l i z e d without b i a s voltagee.

1 .B.S.Ryvkin, Sov.Tech. Phys.Lett. ,v. 5.25 (1 979).

2.

^B.S.Ryvkin,

-

Sov.Pbgs.Serni~ond.~v.15,796(1981).

2.

B.S.Ryvkin.Proc.Al1-Union Conf. on Physics of Semicond., Baku, (in Russian), v. 1,56 (1982) ; Sov.Phys.Semicon.,v.19,1(1985).

4.

S.N.Aleksandrov,M.G.Ivanov,

M.I.Remenov,B..S.Ryvkin,l.A.Sinitsyn,and B.S.Yavich,Sov.Phys.

Semicond.,v.21,430(1987).

-

^5. D.M.Butusov,G.G.Gotsadze,V.R..La- rionov,B.S.Rgvkin,Sov.Tech.Phys.Lett. , ~ . 1 3 , N 7 , (1987); v.l3,I?l2

(1987).